Full Name
Daniel John Blackwood
Variants
Blackwood, D.
Blackwood, D.J.
 
 
 
Email
msedjb@nus.edu.sg
 

Publications

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Department:  PHYSICS

Results 1-20 of 30 (Search time: 0.008 seconds).

Issue DateTitleAuthor(s)
18-Nov-2004Controlled intensity emission from patterned porous silicon using focused proton beam irradiationTeo, E.J. ; Mangaiyarkarasi, D. ; Breese, M.B.H. ; Bettiol, A.A. ; Blackwood, D.J. 
22005Controlled shift in emission wavelength from patterned porous silicon using focused ion beam irradiationMangaiyarkarasi, D. ; Teo, E.J. ; Breese, M.B.H. ; Bettiol, A.A. ; Blackwood, D.J. 
32-Oct-1998Effect of heat treatment on the corrosion behaviour of amorphous Mg-18 at% Ni alloyOng, M.S.; Li, Y. ; Blackwood, D.J. ; Ng, S.C. ; Kam, C.H.
42010Electrochemical anodization of silicon-on-insulator wafers using an ACBreese, M.B.H. ; Azimi, S.; Ow, Y.S. ; Mangaiyarkarasi, D. ; Chan, T.K. ; Jiao, S.; Dang, Z.Y.; Blackwood, D.J. 
5Aug-2006Fabrication of patterned porous silicon using high-energy ion irradiationTeo, E.J. ; Breese, M.B.H. ; Bettiol, A.A. ; Champeaux, F.J.T.; Watt, F. ; Blackwood, D.J. 
62004Fabrication of silicon microstructures using a high energy ion beamTeo, E.J. ; Liu, M.H. ; Breese, M.B.H. ; Tavernier, E.P.; Bettiol, A.A. ; Blackwood, D.J. ; Watt, F. 
72007FePt films fabricated by electrodepositionThongmee, S. ; Ding, J. ; Lin, J.Y. ; Blackwood, D.J. ; Yi, J.B. ; Yin, J.H.
82007Freestanding waveguides in siliconYang, P.Y.; Mashanovich, G.Z.; Gomez-Morilla, I.; Headley, W.R.; Reed, G.T.; Teo, E.J. ; Blackwood, D.J. ; Breese, M.B.H. ; Bettiol, A.A. 
92007Future prospects for silicon photonicsHeadley, W.R.; Reed, G.T.; Mashanovich, G.Z.; Timotijevic, B.; Gardes, F.Y.; Thomson, D.; Yang, P.; Teo, E.-J. ; Blackwood, D.J. ; Breese, M.B.H. ; Bettiol, A.A. ; Waugh, P.
101-May-2009High resolution TEM and triple-axis XRD investigation into porous silicon formed on highly conducting substratesWijesinghe, T.L.S.L. ; Li, S.Q. ; Breese, M.B.H. ; Blackwood, D.J. 
112006Hole transport through proton-irradiated p -type silicon wafers during electrochemical anodizationBreese, M.B.H. ; Champeaux, F.J.T.; Teo, E.J. ; Bettiol, A.A. ; Blackwood, D.J. 
1210-Jan-2008Influence of doping density on the current-voltage characteristics of p-type silicon in dilute hydrofluoric acidWijesinghe, T.L.S.L. ; Li, S.Q. ; Blackwood, D.J. 
132006Micro-patterned porous silicon using proton beam writingBreese, M.B.H. ; Mangaiyarkarasi, D. ; Teo, E.J. ; Bettiol, A.A. ; Blackwood, D. 
145-Jan-2006Multicolor photoluminescence from porous silicon using focused, high-energy helium ionsTeo, E.J. ; Breese, M.B.H. ; Bettiol, A.A. ; Mangaiyarkarasi, D. ; Champeaux, F.; Watt, F. ; Blackwood, D.J. 
15Aug-2005New developments in the applications of proton beam writingMistry, P.; Gomez-Morilla, I.; Grime, G.W.; Webb, R.P.; Gwilliam, R.; Cansell, A.; Merchant, M.; Kirkby, K.J.; Teo, E.J. ; Breese, M.B.H. ; Bettiol, A.A. ; Blackwood, D.J. ; Watt, F. 
162007Novel fabrication techniques for silicon photonicsReed, G.T.; Yang, P.Y.; Headley, W.R.; Waugh, P.M.; Mashanovich, G.Z.; Thomson, D.; Gwilliam, R.M.; Teo, E.J. ; Blackwood, D.J. ; Breese, M.B.H. ; Bettiol, A.A. 
172006Patterning light emitting porous silicon using helium beam irradiationTeo, E.J. ; Breese, M.B.H. ; Bettiol, A.A. ; Champeaux, F.; Blackwood, D.J. 
1818-Aug-2008Photoluminescent n-type porous silicon fabricated in the darkLi, S.Q. ; Wijesinghe, T.L.S.L. ; Blackwood, D.J. 
1918-Aug-2008Photoluminescent n-type porous silicon fabricated in the darkLi, S.Q. ; Wijesinghe, T.L.S.L. ; Blackwood, D.J. 
202006Porous silicon based Bragg reflectors and Fabry-Perot interference filters for photonic applicationsMangaiyarkarasi, D. ; Breese, M.B.H. ; Sheng, O.Y. ; Ansari, K. ; Vijila, C.; Blackwood, D.