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Cho Byung-Jin

rp04188

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Full Name
Cho Byung-Jin
(not current staff)
Variants
Cho, Byung Jin
CHO, BYUNG JIN
Cho, B.
Cho, B.J.
Cho, B.C.
Cho, Byung-Jin
Byung, J.C.
Cho, B.-J.
 
Main Affiliation
 
Faculty
 
Email
elebjcho@nus.edu.sg
 

Publications

Refined By:
Date Issued:  [1905 TO 1999]

Results 1-14 of 14 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
1Aug-1997A mechanism of field-oxide-ungrowth phenomenon in recessed isolation process and practical solutionJang, S.-A.; Kim, Y.-B.; Cho, B.-J. ; Kim, J.-C.
21999Channel-width effect on hot-carrier degradation in NMOSFETs with recessed-LOCOS isolation structuresYue, J.M.P.; Chim, W.K. ; Cho, B.J. ; Chan, D.S.H. ; Qin, W.H.; Kim, Y.B.; Jang, S.A.; Yeo, I.S.
318-Oct-1999Conduction mechanism under quasibreakdown of ultrathin gate oxideHe, Y.D. ; Guan, H.; Li, M.F. ; Cho, B.J. ; Dong, Z.
41999Design of lateral IGBT protection circuit for smart power integrationLuo, Junyang; Liang, Yung C. ; Cho, Byung-Jin 
5Dec-1999Effect of substrate hot-carrier injection on quasibreakdown of ultrathin gate oxideCho, B.J. ; Xu, Z.; Guan, H.; Li, M.F. 
6Nov-1999Impact of nitrogen implantation into polysilicon followed by drive-in process on gate oxide integrityCho, B.J. ; Ko, L.H.; Nga, Y.A.; Chan, L.H.
7Jul-1998Isolation process induced wafer warpageJang, S.-A.; Yeo, I.-S.; Kim, Y.-B.; Cho, B.-J. ; Lee, S.-K.
8Jul-1998Isolation process induced wafer warpageJang, S.-A.; Yeo, I.-S.; Kim, Y.-B.; Cho, B.-J. ; Lee, S.-K.
91999Predicting plasma charging damage in ultra thin gate oxide by using nondestructive DCIV techniqueGuan, Hao; Li, M.F. ; Zhang, Yaohui ; Cho, B.J. ; Jie, B.B.; Xie, Joseph; Wang, J.L.F. ; Yen, Andrew C. ; Sheng, George T.T.; Dong, Zhong; Li, Weidan
101999Predicting plasma charging damage in ultra thin gate oxide by using nondestructive DCIV techniqueGuan, Hao; Li, M.F. ; Zhang, Yaohui ; Cho, B.J. ; Jie, B.B.; Xie, Joseph; Wang, J.L.F. ; Yen, Andrew C. ; Sheng, George T.T.; Dong, Zhong; Li, Weidan
111999Radiation-induced leakage current of ultra-thin gate oxide under X-ray lithography conditionsCho, Byung Jin ; Kim, Sun Jung ; Ling, C.H. ; Joo, Moon Sig ; Yeo, In Seok
121999Radiation-induced leakage current of ultra-thin gate oxide under X-ray lithography conditionsCho, Byung Jin ; Kim, Sun Jung ; Ling, C.H. ; Joo, Moon Sig ; Yeo, In Seok
13Nov-1999Role of hole fluence in gate oxide breakdownLi, M.F. ; He, Y.D. ; Ma, S.G.; Cho, B.-J. ; Lo, K.F.; Xu, M.Z.
141999Study of quasi-breakdown mechanism in ultra-thin gate oxide by using DCIV techniqueGuan, Hao; Cho, Byung Jin ; Li, M.F. ; He, Y.D. ; Xu, Zhen; Dong, Zhong