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Eng Fong Chor

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Full Name
Eng Fong Chor
Variants
Chor, E.F.
CHOR, ENG FONG
Chor, E.-F.
Eng, F.C.
Chor, Eng Fong
 
Main Affiliation
 
Faculty
 
Email
elecef@nus.edu.sg
 
Other emails
 

Publications

Results 61-80 of 90 (Search time: 0.462 seconds).

Issue DateTitleAuthor(s)
612009Ohmic contact properties and annealing effect for Au/Ni on p-Type P-Doped ZnOHu, G. ; Gong, H. ; Chor, E.F. 
2Feb-2004Optical and electrical characterization of annealed silicon-implanted GaNWang, H.T.; Tan, L.S. ; Chor, E.F. 
32003Optical and Electrical Characterization of Annealed Silicon-implanted GaNWang, H.T.; Tan, L.S. ; Chor, E.F. 
42009P-FinFETs with Al segregated NiSi/p+-Si source/drain contact junction for series resistance reductionSinha, M.; Lee, R.T.P. ; Devi, S.N.; Lo, G.-Q.; Chor, E.F. ; Yeo, Y.-C. 
5Jul-2000Photoresist patterning and ion implantation degradation effects on flash memory device yieldCha, C.L.; Ngo, Q.; Chor, E.F. ; See, A.K.; Lee, T.J.
61-Oct-2010Physical and electrical characteristics of hafnium oxide films on AlGaN/GaN heterostructure grown by pulsed laser depositionTian, F.; Chor, E.F. 
72000Plasma etching optimization of oxide/nitride/oxide interpoly dielectric breakdown time in flash memory devicesCha, C.L.; Chor, E.F. ; Gong, H. ; Zhang, A.Q.; Chan, L.
82006Properties of p-type and n-type ZnO influenced by P concentrationHu, G. ; Gong, H. ; Chor, E.F. ; Wu, P.
92006Properties of p-type and n-type ZnO influenced by P concentrationHu, G. ; Gong, H. ; Chor, E.F. ; Wu, P.
101-Nov-2005Pulsed laser annealing of Be-implanted GaNWang, H.T.; Tan, L.S. ; Chor, E.F. 
11Jan-2002Quasi-two-dimensional transmission line model (QTD-TLM) for planar ohmic contact studiesChor, E.F. ; Lerdworatawee, J.
122008Rhodium-based Schottky contacts on n-doped gallium nitrideTian, F.; Chor, E.F. 
13Dec-2009Schottky barrier height modulation of nickeldysprosium-alloy germanosilicide contacts for strained P-FinFETsSinha, M.; Lee, R.T.P. ; Chor, E.F. ; Yeo, Y.-C. 
142007Schottky barrier height tuning of silicide on Si1-x CxSinha, M.; Chor, E.F. ; Tan, C.F.
152009Single silicide comprising nickel-dysprosium alloy for integration in p- and n-FinFETs with independent control of contact resistance by aluminum implantSinha, M.; Lee, R.T.P. ; Devi, S.N.; Lo, G.-Q.; Eng, F.C. ; Yeo, Y.-C. 
162000Steep retrograde indium channel profiling for high performance nMOSFETs device fabricationOng, S.Y.; Chor, E.F. ; Leung, Y.K.; Lee, J.; Li, W.S. ; See, A. ; Chan, L.
171-Aug-1992Strong low-frequency noise in polysilicon emitter bipolar transistors with interfacial oxide due to fluctuations in tunneling probabilitiesLau, Wai Shing ; Chor, Eng Fong ; Foo, Chee Seng; Khoong, Wai Chee
1829-May-2006Structural and electrical characterizations of the pulsed-laser-deposition- grown Sc2O3/GaN heterostructureLiu, C.; Chor, E.F. ; Tan, L.S. ; Dong, Y.
191-Aug-2004Study of activation of beryllium implantation in gallium nitrideWang, H.T.; Tan, L.S. ; Chor, E.F. 
202005Suppressed leakage in low temperature RTA (700°C 30S) junctions with buried epitaxial Si 1-yC yTan, C.F.; Lee, H.; Liu, J.P.; Quek, E.; Chan, L.; Chor, E.F.