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Eng Fong Chor

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Full Name
Eng Fong Chor
Variants
Chor, E.F.
CHOR, ENG FONG
Chor, E.-F.
Eng, F.C.
Chor, Eng Fong
 
Main Affiliation
 
Faculty
 
Email
elecef@nus.edu.sg
 
Other emails
 

Publications

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Department:  MATERIALS SCIENCE

Results 1-17 of 17 (Search time: 0.006 seconds).

Issue DateTitleAuthor(s)
120-Jan-2002Annealing effects on contact properties of Aluminum doped Zinc Oxide thin filmsLow, K.B.; Gong, H. ; Chor, E.F. 
21998Application of a negative sweep voltage to control gate of fresh flash memory devices to facilitate threshold voltage test measurementCha, C.L.; Chor, E.F. ; Gong, H. ; Teo, T.H.; Zhang, A.Q.; Chan, L.
31997Breakdown of reoxidized nitrided oxide (ONO) in Flash memory devices upon current stressingCha, C.L.; Chor, E.F. ; Gong, H. ; Zhang, A.Q.; Chan, L.
41997Constant current-stress induced breakdown of reoxidized nitrided oxide (ONO) in Flash memory devicesCha, C.L.; Chor, E.F. ; Gong, H. ; Zhang, A.Q.; Chan, L.; Xie, J.
51997Effects of constant current-stressing on reoxidized nitrided oxide (ONO) in flash memory devicesCha, C.L.; Chor, E.F. ; Gong, H. ; Zhang, A.Q.; Chan, L.; Xie, J.
62000Effects of surface smoothness and deposition temperature of floating gates in flash memory devices to oxide/nitride/oxide interpoly dielectric breakdownCha, C.L.; Chor, E.F. ; Gong, H. ; Chan, L.
71-Aug-2001Electrical characterization and metallurgical analysis of Pd-containing multilayer contacts on GaNChor, E.F. ; Zhang, D.; Gong, H. ; Chen, G.L.; Liew, T.Y.F.
8Mar-2000Electrical characterization, metallurgical investigation, and thermal stability studies of (Pd, Ti, Au)-based ohmic contactsChor, E.F. ; Zhang, D.; Gong, H. ; Chong, W.K.; Ong, S.Y.
926-Jun-2001Embedded polysilicon gate MOSFETCHAN, LAP; CHA, CHER LIANG; CHOR, ENG FONG ; HAO, GONG ; LEE, TECK KOON
101999Enhancement of hot-carrier injection resistance for deep submicron transistor gate dielectric with a powered solenoidCha, C.-L.; Tee, K.-C.; Chor, E.-F. ; Gong, H. ; Prasad, K.; Bourdillon, A.J. ; See, A. ; Chan, L.; Lee, M.M.-O.
111999Evaluation of rapid thermal nitrided ONO interpoly dielectric resistance to plasma process-induced damageCha, C.L.; Chor, E.F. ; Gong, H. ; Zhang, A.Q.; Dong, Z.; Chan, L.
121-Sep-1999Evaluation of silicon nitride and silicon carbide as efficient polysilicon grain-growth inhibitorsCha, C.L.; Chor, E.F. ; Jia, Y.M.; Bourdillon, A.J. ; Gong, H. ; Pan, J.S.; Zhang, A.Q.; Tang, S.K.; Boothroyd, C.B.
131998Evaluation of the dielectric breakdown of reoxidized nitrided oxide (ONO) in flash memory devices using constant current-stressing techniqueCha, C.L.; Chor, E.F. ; Gong, H. ; Zhang, A.Q.; Chan, L.; Xie, J.
1416-May-2000Method and apparatus to image metallic patches embedded in a non-metal surfaceCHA, CHER LIANG RANDALL; GONG, HAO ; CHOR, ENG FONG ; CHAN, LAP
152000Plasma etching optimization of oxide/nitride/oxide interpoly dielectric breakdown time in flash memory devicesCha, C.L.; Chor, E.F. ; Gong, H. ; Zhang, A.Q.; Chan, L.
1619-Jul-1999Surface smoothing of floating gates in flash memory devices via surface nitrogen and carbon incorporationCha, C.-L.; Chor, E.-F. ; Gong, H. ; Bourdillon, A.J. ; Jia, Y.-M.; Pan, J.-S. ; Zhang, A.-Q.; Chan, L.
171998Threshold voltage instabilities of fresh flash memory devices caused by plasma chargingCha, C.L.; Chor, E.F. ; Gong, H. ; Teo, T.H.; Zhang, A.Q.; Chan, L.