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Eng Fong Chor

rp04127

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Full Name
Eng Fong Chor
Variants
Chor, E.F.
CHOR, ENG FONG
Chor, E.-F.
Eng, F.C.
Chor, Eng Fong
 
Main Affiliation
 
Faculty
 
Email
elecef@nus.edu.sg
 
Other emails
 

Publications

Refined By:
Date Issued:  [2000 TO 2009]

Results 1-20 of 59 (Search time: 0.533 seconds).

Issue DateTitleAuthor(s)
12009Achieving sub-0.1 ev hole schottky barrier height for NiSiGe on SiGe by aluminum segregationSinha, M.; Lee, R.T.P. ; Lohani, A.; Mhaisalkar, S.; Chor, E.F. ; Yeo, Y.-C. 
22004Activation of beryllium-implanted gallium nitride by combined pulse laser and rapid thermal annealingTan, L.S. ; Wang, H.T.; Chor, E.F. 
326-Mar-2007AlGaN/GaN high electron mobility transistors with implanted ohmic contactsWang, H.T.; Tan, L.S. ; Chor, E.F. 
420-Jan-2002Annealing effects on contact properties of Aluminum doped Zinc Oxide thin filmsLow, K.B.; Gong, H. ; Chor, E.F. 
52007Band offset measurements of the pulsed-laser-deposition-grown Sc 2O3 (111)/GaN (0001) heterostructure by X-ray photoelectron spectroscopyLiu, C.; Chor, E.F. ; Tan, L.S. ; Dong, Y.
6Jul-2003Characteristics and mechanism of inductive coupled plasma etching of hydrogenated amorphous silicon carbide filmsChoi, W.K. ; Shi, J. ; Chor, E.F. 
710-May-2006Defect suppression of indium end-of-range during solid phase epitaxy annealing using Si1-yCy in siliconTan, C.F.; Chor, E.F. ; Lee, H.; Liu, J.; Quek, E.; Chan, L.
82000Does short wavelength lithography process degrade the integrity of thin gate oxide?Kim, S.J. ; Cho, B.J. ; Chong, P.F.; Chor, E.F. ; Ang, C.H.; Ling, C.H. ; Joo, M.S.; Yeo, I.S.
926-Mar-2007Effects of chemical and plasma surface treatments on the O2-annealed Ni/Au contact to p-GanLim, J.; Chor, E.F. ; Tan, L.S. 
102001Effects of electron-beam lithography on thin gate oxide reliabilityChong, P.F.; Cho, B.J. ; Chor, E.F. ; Joo, M.S. 
112001Effects of microtrenching from polysilicon gate patterning on 0.13μm MOSFET device performanceChua, C.S.; Chor, E.F. ; Yu, J.; Pradeep, Y.; Chan, L.
122001Effects of plasma surface treatment on ohmic contact to n-GaNChor, E.F. ; Kang, X.J. 
131-Aug-2004Effects of surface plasma treatment on n-GaN ohmic contact formationLi, L.K.; Tan, L.S. ; Chor, E.F. 
142000Effects of surface smoothness and deposition temperature of floating gates in flash memory devices to oxide/nitride/oxide interpoly dielectric breakdownCha, C.L.; Chor, E.F. ; Gong, H. ; Chan, L.
151-Aug-2001Electrical characterization and metallurgical analysis of Pd-containing multilayer contacts on GaNChor, E.F. ; Zhang, D.; Gong, H. ; Chen, G.L.; Liew, T.Y.F.
16Mar-2000Electrical characterization, metallurgical investigation, and thermal stability studies of (Pd, Ti, Au)-based ohmic contactsChor, E.F. ; Zhang, D.; Gong, H. ; Chong, W.K.; Ong, S.Y.
17Dec-2000Electron-beam irradiation-induced gate oxide degradationCho, B.J. ; Chong, P.F.; Chor, E.F. ; Joo, M.S.; Yeo, I.S.
1826-Jun-2001Embedded polysilicon gate MOSFETCHAN, LAP; CHA, CHER LIANG; CHOR, ENG FONG ; HAO, GONG ; LEE, TECK KOON
191-May-2007Enhanced device performance of AlGaN/GaN HEMTs using HfO2 high-k dielectric for surface passivation and gate oxideLiu, C.; Chor, E.F. ; Tan, L.S. 
20Jun-2006Enhancing leakage suppression in carbon-rich silicon junctionsTan, C.F.; Chor, E.F. ; Lee, H.; Quek, E.; Chan, L.