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Pey Kin Leong

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Full Name
Pey Kin Leong
Variants
PEY, KIN-LEONG
PEY, KIN L.
LEONG, KIN
Pey, Kin Leong
PEY, KIN LEONG
Pey, K.L.
 
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Faculty
 

Publications

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Department:  ELECTRICAL ENGINEERING

Results 1-20 of 29 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
129-May-2000Annealing of ultrashallow p+/n junction by 248 nm excimer laser and rapid thermal processing with different preamorphization depthsChong, Y.F.; Pey, K.L. ; Wee, A.T.S. ; See, A.; Chan, L.; Lu, Y.F.; Song, W.D.; Chua, L.H.
22000Application of excimer laser annealing in the formation of ultra-shallow p+/n junctionsChong, Y.F.; Pey, K.L. ; Wee, A.T.S. ; See, A. ; Tung, C.-H. ; Gopalakrishnan, R. ; Lu, Y.F. 
31995Cathodoluminescence contrast of localized defects part I. Numerical model for simulationPey, K.L. ; Chan, D.S.H. ; Phang, J.C.H. ; Breese, J.F.; Myhajlenko, S.
41995Cathodoluminescence contrast of localized defects part II. Defect investigationPey, K.L. ; Phang, J.C.H. ; Chan, D.S.H. ; Breeze, J.F.; Myhajlenko, S.
55-Mar-1997Cathodoluminescence detectorPHANG, JACOB CHEE HONG ; CHAN, DANIEL SIU HUNG ; PEY, KIN LEONG 
62000Characterization of Ni- and Ni(Pt)-silicide formation on narrow polycrystalline Si lines by Raman spectroscopyLee, P.S.; Mangelinck, D.; Pey, K.L. ; Ding, J. ; Osipowicz, T. ; Ho, C.S.; Chen, G.L.; Chan, L.
74-Jan-2000Cmos gate architecture for integration of salicide process in sub 0.1. .muM devicesHO, CHAW SING; KARUNASIRI, R. P. G. ; CHUA, SOO JIN ; PEY, KIN LEONG ; LEE, KONG HEAN
81996Design and characterisation of a single-reflection, solid-state detector with high discrimination against backscattered electrons for cathodoluminescence microscopyPey, K.L. ; Phang, J.C.H. ; Chan, D.S.H. ; Leong, Y.K.
921-Nov-1995Double reflection cathodoluminescence detector with extremely high discrimination against backscattered electronsCHAN, DANIEL S. H. ; LEONG, KIN ; PHANG, JACOB C. H. 
10Sep-2000Effect of BF2 + implantation on void formation in Ti-salicided narrow polysilicon linesPey, K.L. ; Chua, H.N.; Siah, S.Y.
111-Oct-2000Effects of high current conduction in sub-micron Ti-silicided filmsGan, C.L.; Pey, K.L. ; Chim, W.K. ; Siah, S.Y.
122000Estimation of the area of voids in deep-submicron aluminium interconnects using resistance-noise measurementsChu, L.W.; Pey, K.L. ; Chim, W.K. ; Loh, S.K.; Er, E.
1315-Jun-2000Formation of voids in Ti-salicided BF+ 2-doped submicron polysilicon linesChua, H.N.; Pey, K.L. ; Lai, W.H.; Siah, S.Y.
1423-Nov-1993High efficiency cathodoluminescence detector with high discrimination against backscattered electronsPHANG, JACOB C. H. ; CHAN, DANIEL S. H. ; PEY, KIN L. 
151999Impact of voids in Ti-salicided p+ polysilicon lines on TiSi2 electrical propertiesChua, H.N.; Pey, K.L. ; Siah, S.Y.; Ong, L.Y.; Lim, E.H.; Gan, C.L.; See, K.H. ; Ho, C.S.
16Dec-2000Improved NiSi salicide process using presilicide N2 + implant for MOSFETsLee, P.S.; Pey, K.L. ; Mangelinck, D.; Ding, J. ; Wee, A.T.S. ; Chan, L.
1721-Sep-1999In-line process monitoring using micro-raman spectroscopyLIM, ENG HUA; PEY, KIN-LEONG ; WONG, HARIANTO; LEE, KONG HEAN
18Dec-1993Investigation of dislocations in GaAs using cathodoluminescence in the scanning electron microscopePey, K.L. ; Phang, J.C.H. ; Chan, D.S.H. ; Balk, L.J.; Jakubowicz, A.; Bresse, J.F.; Myhajlenko, S.
191999Line-width dependence of void formation in TI-salicided BF 2-doped polysilicon linesChua, H.N.; Pey, K.L. ; Siah, S.Y.; Lim, E.H.; Ho, C.S.
206-Nov-2000Liquid-phase epitaxial growth of amorphous silicon during laser annealing of ultrashallow p+/n junctionsChong, Y.F.; Pey, K.L. ; Lu, Y.F. ; Wee, A.T.S. ; Osipowicz, T. ; Seng, H.L. ; See, A.; Dai, J.-Y.