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He Yandong

rp02888

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Full Name
He Yandong
Variants
He, Y.
He, Y.D.
 
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Faculty
 

Publications

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Author:  Cho, B.J.

Results 1-8 of 8 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
12000A study of quasi-breakdown mechanism in ultrathin gate oxide under various types of stressGuan, H.; Xu, Z.; Cho, B.J. ; Li, M.F. ; He, Y.D. 
2Aug-2000A thorough study of quasi-breakdown phenomenon of thin gate oxide in dual-gate CMOSFET'sGuan, H.; Li, M.-F. ; He, Y. ; Cho, B.J. ; Dong, Z.
318-Oct-1999Conduction mechanism under quasibreakdown of ultrathin gate oxideHe, Y.D. ; Guan, H.; Li, M.F. ; Cho, B.J. ; Dong, Z.
4May-2001Experimental evidence of interface-controlled mechanism of quasi-breakdown in ultrathin gate oxideGuan, H.; Cho, B.J. ; Li, M.F. ; Xu, Z.; He, Y.D. ; Dong, Z.
52000Investigation of quasi-breakdown mechanism in ultra-thin gate oxidesGuan, H.; He, Y.D. ; Li, M.F. ; Cho, B.J. ; Dong, Z.
6Nov-1999Role of hole fluence in gate oxide breakdownLi, M.F. ; He, Y.D. ; Ma, S.G.; Cho, B.-J. ; Lo, K.F.; Xu, M.Z.
72000Roles of primary hot hole and FN electron fluences in gate oxide breakdownLi, M.F. ; He, Y.D. ; Ma, S.G.; Cho, B.J. ; Lo, K.F.
81999Study of quasi-breakdown mechanism in ultra-thin gate oxide by using DCIV techniqueGuan, Hao; Cho, Byung Jin ; Li, M.F. ; He, Y.D. ; Xu, Zhen; Dong, Zhong