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Thye Shen, Andrew Wee

rp02822

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Full Name
Thye Shen, Andrew Wee
Variants
Wee, A.T.
Wee, A.T.S.
Wee A.T.S.
Thye Shen Wee, A.
Wee, A.T.S
Thye-Shen Wee, A.
Wee A.T.S
Wee, S.
Wee, A.T.-S.
Wee, A.T.A.
WEE, ANDREW THYE SHEN
Wee, T.S.
Wee, A.
Wee, Andrew T.S.
Wee, T.S.A.
Wee Thye Shen, Andrew
 
Main Affiliation
 
Faculty
 
Email
phyweets@nus.edu.sg
 

Publications

Refined By:
Date Issued:  [2000 TO 2023]
Date Issued:  [2000 TO 2009]

Results 301-320 of 337 (Search time: 0.006 seconds).

Issue DateTitleAuthor(s)
3012009Temperature-dependent transition from injection-limited to space-charge-limited current in metal-organic diodesZheng, Y. ; Wee, A.T.S. ; Troadec, C.; Chandrasekhar, N.
3022006Terrace width dependence of cobalt silicide nucleation on Si(111)- (7×7)Zilani, M.A.K. ; Xu, H. ; Wang, X.-S. ; Wee, A.T.S. 
30315-May-2001The alloying effect of Ni on the corrosion behavior of melt-spun Mg-Ni ribbonsYao, H.B.; Li, Y. ; Wee, A.T.S. ; Chai, J.W.; Pan, J.S. 
3041-May-2001The evolution of 3 × 3, 6 × 6, √3 × √3R30° and 6√3 × 6√3R30° superstructures on 6H-SiC (0 0 0 1) surfaces studied by reflection high energy electron diffractionXie, X.N. ; Wang, H.Q. ; Wee, A.T.S. ; Loh, K.P. 
30515-Feb-2004The formation of Ge nanocrystals in a metal-insulator-semiconductor structure and its memory effectHeng, C.L.; Liu, Y.J. ; Wee, A.T.S. ; Finstad, T.G.
3065-Dec-2008The impact of nitrogen co-implantation on boron ultra-shallow junction formation and underlying physical understandingYeong, S.H.; Colombeau, B.; Mok, K.R.C.; Benistant, F.; Liu, C.J. ; Wee, A.T.S. ; Dong, G.; Chan, L.; Srinivasan, M.P. 
72004The interaction of C 60 with Si(111) and Co/Si(111)Zilani, M.A.K. ; Xu, H. ; Wang, X.S. ; Wee, A.T.S. 
82001The investigation of surface topography development in Si(001) and Si(111) during SIMS depth profilingLau, G.S.; Tok, E.S. ; Wee, A.T.S. ; Liu, R. ; Lim, S.L. 
94-Jun-2001The structural and electronic properties of (AlN)x(C2)1-x and (AlN)x(BN)1-x alloysZheng, J.-C. ; Wang, H.-Q. ; Huan, C.H.A. ; Wee, A.T.S. 
102000The use of sample rotation in SIMS profiling of Ta barrier layers to Cu diffusionLiu, R. ; Wee, A.T.S. ; Liu, L. ; Hao, G. 
112005Thermal confinement of advanced semiconductor substrates during laser annealingPey, K.L.; Ong, K.K.; Lee, P.S.; Wee, A.T.S. ; Wang, X.C.; Chong, Y.F.; Yeo, K.L.
12Aug-2004Thermal stability of Cu/Ta/ultra low k porous polymer structures for multilevel interconnectsZhang, D.H.; Yang, L.Y.; Li, C.Y.; Liu, R. ; Wee, A.T.S. ; Foo, P.D.
132007Thermal stability of nitrogen-doped SrTiO3 films: Electronic and optical properties studiesMi, Y.Y.; Yu, Z.; Wang, S.J.; Gao, X.Y. ; Wee, A.T.S. ; Ong, C.K. ; Huan, C.H.A.
14May-2006Thickness dependence of X-ray absorption and photoemission in Fe thin films on Si(0 0 1)Gao, X. ; Qi, D. ; Tan, S.C. ; Wee, A.T.S. ; Yu, X. ; Moser, H.O. 
152007Thickness-dependent energy level alignment of rubrene adsorbed on Au(111)Wang, L. ; Chen, S. ; Liu, L. ; Qi, D. ; Gao, X. ; Wee, A.T.S. 
1629-Jul-2004Three-dimensional self-assembled monolayer (3D SAM) of n-alkanethiols on copper nanoclustersAng, T.P.; Wee, T.S.A. ; Chin, W.S. 
171-Jun-2004Time-resolved reflectance studies of silicon during laser thermal processing of amorphous silicon gates on ultrathin gate oxidesChong, Y.F.; Gossmann, H.-J.L.; Thompson, M.O.; Yang, S.; Pey, K.L.; Wee, A.T.S. 
1810-Sep-2001Trends in bonding configuration at SiC/III-V semiconductor interfacesZheng, J.-C. ; Wang, H.-Q. ; Wee, A.T.S. ; Huan, C.H.A. 
194-Feb-2008Tunable arrays of C60 molecular chainsChen, L. ; Chen, W. ; Huang, H. ; Zhang, H.L. ; Yuhara, J.; Wee, A.T.S. 
2024-Jan-2000Tungsten-carbon thin films deposited using screen grid technique in an electron cyclotron resonance chemical vapour deposition systemRusli; Yoon, S.F.; Yang, H.; Ahn, J.; Huang, Q.F.; Zhang, Q.; Guo, Y.P. ; Yang, C.Y. ; Teo, E.J. ; Wee, A.T.S. ; Huan, A.C.H. ; Watt, F.