1. ScholarBank@NUS

Karunasiri,Gamani

rp02811

Collaboration Map View Statistics Email Alert RSS Feed

Profile

Full Name
Karunasiri,Gamani
Variants
Karunasiri, G.
Karunasiri, R.P.G.
KARUNASIRI, GAMANI
Karunasirf, R.P.G.
KARUNASIRI, R.P.G.
Karunasiri, Gamani
Gamani Karunasiri, R.P.
KARUNASIRI, R. P. G.
Gamani, K.
 
Main Affiliation
 
Faculty
 

Publications

Results 1-20 of 43 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
1Jan-1999Carbon nitride thin films deposited by nitrogen-ion-assisted KRF excimer ablation of graphiteFeng, L.Y. ; Min, R.Z.; Qiao, N.H.; Feng, H.Z.; Chan, D.S.H. ; Seng, L.T. ; Yin, C.S.; Gamani, K. ; Geng, C. ; Kun, L.
21998Characteristics of InGaAs quantum dot infrared photodetectorsXu, S.J. ; Chua, S.J. ; Mei, T.; Wang, X.C.; Zhang, X.H.; Karunasiri, G. ; Fan, W.J.; Wang, C.H.; Jiang, J.; Wang, S.; Xie, X.G.
31-Aug-1998Characterization of titanium silicide by Raman spectroscopy for submicron IC processingLim, E.H.; Karunasiri, G. ; Chua, S.J. ; Shen, Z.X. ; Wong, H.; Pey, K.L.; Lee, K.H.; Chan, L.
423-Nov-2000Circuit for microbolometer bias-heating cancellationXu, Y.P. ; Qian, X.B. ; Karunasiri, G. 
5Apr-2000Circuit model for quantum-well infrared photodetectors and its comparison with experimentsChee, Y.H.; Karunasiri, G. 
64-Jan-2000Cmos gate architecture for integration of salicide process in sub 0.1. .muM devicesHO, CHAW SING; KARUNASIRI, R. P. G. ; CHUA, SOO JIN ; PEY, KIN LEONG ; LEE, KONG HEAN
71997Dependence of the composition of InAs1-xSbx on the mole fraction of In in the melt using LPEChatrath, V.; Chua, S.J. ; Karunasiri, G. ; Mao, Y.
81998Design and analysis of a double barrier quantum well infrared photodetectorTan, L.S. ; Cheah, C.W.; Karunasiri, G. ; Raman, A.
91998Determination of thermal parameters of microbolometers using a single electrical measurementGu, X.; Karunasiri, G. ; Chen, G. ; Sridhar, U.; Xu, B.
10Dec-1995Doping dependence of intersubband transitions in Si1-xGex Si multiple quantum wellsKarunasiri, G. ; Jin Chua, S. ; Suk Park, J.; Wang, K.L.
118-Apr-1999DUAL BAND INFRARED DETECTOR USING STEP MULTIQUANTUM WELLS WITH SUPERLATTICE BARRIERSKARUNASIRI, GAMANI ; CHUA, SOO-JIN 
121997Effect of argon or nitrogen pre-amorphized implant on SALICIDE formation for deep sub-micron CMOS technologyHo, C.S.; Pey, K.L.; Wong, H.; Karunasirf, R.P.G. ; Chua, S.J. ; Lee, K.H.; Tang, Y.; Wong, S.M.; Chan, L.H.
132003Effect of operating temperature on electrical and thermal properties of microbolometer infrared sensorsKarunasiri, G. ; Ramakrishna, M.V.S.; Neuzil, P.
1430-Nov-1996Effect of presence and type of particulate reinforcement on the electrical conductivity of non-heat treatable aluminumGupta, M. ; Karunasiri, G. ; Lai, M.O. 
151998Effects of changing Al mole fraction on the performance of an InGaAlAs/InP DBRTDLim, C.H.; Chua, S.J. ; Karunasiri, G. 
162001Effects of hydrostatic pressure on Raman scattering in Ge quantum dotsTeo, K.L. ; Qin, L.; Noordin, I.M.; Karunasiri, G. ; Shen, Z.X. ; Schmidt, O.G.; Eberl, K.; Queisser, H.J.
171999Electro-thermal modelling of infrared microemitters using PSPICERavi Kiran, S.; Karunasiri, G. 
181998Extraction of thermal parameters of microbolometer infrared detectors using electrical measurementKarunasiri, G. ; Gu, X.; Chen, G. ; Sridhar, U. 
192-Nov-1995Heavily silicon doped InGaAlAs InP epilayers grown by molecular beam epitaxyRamam, A. ; Chua, S.J. ; Karunasiri, G. ; Vaya, P.R. 
201-Feb-2000Highly sensitive infrared temperature sensor using self-heating compensated microbolometersRamakrishna, M.V.S.; Karunasiri, G. ; Neuzil, P.; Sridhar, U.; Zeng, W.J.