Full Name
Gong Hao
Variants
Hao, G.
Gong, Hao
Gong, H.
HAO, GONG
GONG, HAO
Gong H.
 
 
 
Email
msegongh@nus.edu.sg
 

Results 1-20 of 230 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
121-Mar-2012A high energy density asymmetric supercapacitor from nano-architectured Ni(OH) 2/Carbon nanotube electrodesTang, Z. ; Tang, C.-H.; Gong, H. 
21-Jan-2011A molecular quantum wire of linear carbon chains encapsulated within single-walled carbon nanotube (Cn@SWNT)Lim, S.H.; Lin, J.; Widjaja, E.; Poh, C.K.; Luo, Z.; Gao, P.Q.; Shen, Z.; Zhang, Q.; Gong, H. ; Feng, Y. 
31996A multi-technique study of the surface preparation of InSb substrate and subsequently grown CdTe films by molecular beam epitaxyFeng, Z.C. ; Gong, H. ; Choyke, W.J.; Doyle, N.J.; Farrow, R.F.C.
41994A novel scanning electron microscope method for the investigation of charge trapping in insulatorsGong, H. ; Ong, C.K. 
52016A one step processed advanced interwoven architecture of Ni(OH)2 and Cu nanosheets with ultrahigh supercapacitor performanceShi, D; Zhang, L ; Yin, X ; Huang, T.J; Gong, H 
61-Aug-2003A room temperature indium tin oxide/quartz crystal microbalance gas sensor for nitric oxideHu, J.; Zhu, F.; Zhang, J.; Gong, H. 
72005A study of conduction in the transition zone between homologous and ZnO-rich regions in the In 2 O 3 -ZnO systemKumar, B. ; Gong, H. ; Akkipeddi, R.
82013A study on dramatically enhanced capacitance of graphene-decorated hierarchically porous nickelian heterogenite for energy storage applicationTang, C.; Yin, X.; Gong, H. 
91-May-1996A time-resolved current method for the investigation of charging ability of insulators under electron beam irradiationSong, Z.G.; Ong, C.K. ; Gong, H. 
1030-Aug-2010Abrupt resistivity decrease and other unexpected phenomena in a doped amorphous ternary metal oxideSun, J.; Gong, H. 
11Sep-2000Analysis of triple Co alloy layer magnetic thin films with different bias configurationJin, D.; Wang, J.P.; Gong, H. 
123-Mar-1998Anisothermal oxidation of micro-crystalline Ni-20Cr-5Al alloy coating at 850-1280°CLiu, Z.; Gao, W.; Gong, H. 
13Jul-2001Annealing effects of tantalum films on Si and SiO2/Si substrates in various vacuumsLiu, L. ; Wang, Y. ; Gong, H. 
1420-Oct-2001Annealing effects of tantalum thin films sputtered on [001] silicon substrateLiu, L. ; Gong, H. ; Wang, Y. ; Wang, J. ; Wee, A.T.S ; Liu, R. 
1520-Jan-2002Annealing effects on contact properties of Aluminum doped Zinc Oxide thin filmsLow, K.B.; Gong, H. ; Chor, E.F. 
162007Annealing effects on electrical and optical properties of ZnO thin-film samples deposited by radio frequency-magnetron sputtering on GaAs (001) substratesLiu, H.F.; Chua, S.J.; Hu, G.X. ; Gong, H. ; Xiang, N. 
172009Annealing effects on ZnO/NiSi contactWei, R.; Gong, H. 
181998Application of a negative sweep voltage to control gate of fresh flash memory devices to facilitate threshold voltage test measurementCha, C.L.; Chor, E.F. ; Gong, H. ; Teo, T.H.; Zhang, A.Q.; Chan, L.
19Jan-1996Backscattering factor for KLL Auger yield from film-substrate systemsLee, C.L. ; Kong, K.Y.; Gong, H. ; Ong, C.K. 
201997Breakdown of reoxidized nitrided oxide (ONO) in Flash memory devices upon current stressingCha, C.L.; Chor, E.F. ; Gong, H. ; Zhang, A.Q.; Chan, L.