Lee Sungjoo

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Full Name

Lee Sungjoo

(not current staff)

Variants

Sung-Joo, L.E.E.
Lee, S.
Lee, S.J.
LEE, SUNGJOO
Lee, S.-J.

Main Affiliation

ELECTRICAL AND COMPUTER ENGINEERING

Faculty

FAC OF ENGINEERING

elelsj@nus.edu.sg

Refined By:

Subject: Metal gate

Results 1-6 of 6 (Search time: 0.005 seconds).

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	Issue Date	Title	Author(s)
1	Feb-2005	Germanium pMOSFETs With Schottky-barrier Germanide S/D, high-Κ gate dielectric and metal gate	Zhu, S. ; Li, R.; Lee, S.J. ; Li, M.F. ; Du, A.; Singh, J.; Zhu, C. ; Chin, A.; Kwong, D.L.
2	Feb-2005	Germanium pMOSFETs With Schottky-barrier Germanide S/D, high-Κ gate dielectric and metal gate	Zhu, S. ; Li, R.; Lee, S.J. ; Li, M.F. ; Du, A.; Singh, J.; Zhu, C. ; Chin, A.; Kwong, D.L.
3	2007	Interface barrier abruptness and work function requirements for scaling Schottky source-drain MOS transistors	Agrawal, N.; Chen, J. ; Hui, Z.; Yeo, Y.-C. ; Lee, S. ; Chan, D.S.H. ; Li, M.-F. ; Samudra, G.S.
4	Oct-2007	NMOS compatible work function of TaN metal gate with erbium-oxide-doped hafnium oxide gate dielectric	Chen, J. ; Wang, X.P.; Li, M.-F. ; Lee, S.J. ; Yu, M.B.; Shen, C.; Yeo, Y.-C.
5	Jun-2006	Pt-germanide schottky source/drain germanium p-MOSFET with HfO2 gate dielectric and TaN gate electrode	Li, R.; Lee, S.J. ; Yao, H.B.; Chi, D.Z.; Yu, M.B.; Kwong, D.L.
6	May-2004	Schottky-barrier S/D MOSFETs with high-K gate dielectrics and metal-gate electrode	Zhu, S. ; Yu, H.Y. ; Whang, S.J. ; Chen, J.H. ; Shen, C.; Zhu, C. ; Lee, S.J. ; Li, M.F. ; Chan, D.S.H. ; Yoo, W.J. ; Du, A.; Tung, C.H. ; Singh, J.; Chin, A.; Kwong, D.L.