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Lee Sungjoo

rp01794

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Full Name
Lee Sungjoo
(not current staff)
Variants
Sung-Joo, L.E.E.
Lee, S.
Lee, S.J.
LEE, SUNGJOO
Lee, S.-J.
 
Main Affiliation
 
Faculty
 
Email
elelsj@nus.edu.sg
 

Publications

Refined By:
Author:  Kwong, D.L.

Results 1-20 of 34 (Search time: 0.004 seconds).

Issue DateTitleAuthor(s)
12008Application of dopant segregation to metal-germanium-metal photodetectors and its dark current suppression mechanismZang, H.; Lee, S.J. ; Loh, W.Y.; Wang, J.; Yu, M.B.; Lo, G.Q.; Kwong, D.L.; Cho, B.J. 
2Feb-2003Characterization and reliability of dual high-k gate dielectric stack (poly-Si-HfO2-SiO2) prepared by in situ RTCVD process for system-on-chip applicationsLee, S.J. ; Choi, C.H.; Kamath, A.; Clark, R.; Kwong, D.L.
32009CMOS compatible Ge/Si core/shell nanowire gate-all-around pMOSFET integrated with HfO2/TaN gate stackPeng, J.W.; Singh, N.; Lo, G.Q.; Kwong, D.L.; Lee, S.J. 
42007Complementary metal-oxide-semiconductor compatible Al-catalyzed silicon nanowiresWhang, S.J. ; Lee, S.J. ; Yang, W.F.; Cho, B.J. ; Liew, Y.F. ; Kwong, D.L. 
54-Jun-2008Electrical transport of bottom-up grown single-crystal Si 1-xGex nanowireYang, W.F.; Lee, S.J. ; Liang, G.C. ; Whang, S.J. ; Kwong, D.L.
6Oct-2009Enhanced sensitivity of small-size (with 1-μm gate length) junction-field-effect-transistor-based germanium photodetector using two-step germanium epitaxy by ultrahigh vacuum chemical vapor depositionWang, J. ; Zang, H.; Yu, M.B.; Xiong, Y.Z.; Lo, G.Q.; Kwong, D.L.; Lee, S.J. 
72009Enhancement mode GaAs metal-oxide-semiconductor field-effect-transistor integrated with thin AlN surface passivation layer and silicon/phosphorus coimplanted source/drainGao, F.; Lee, S.J. ; Kwong, D.L.
82006Fabrication of high Ge content SiGe layer on Si by Ge condensation techniqueBalakumar, S.; Jun Wei, T.; Tung, C.H.; Lo, G.Q.; Nguyen, H.S.; Fong, C.S.; Agarwal, A.; Kumar, R.; Balasubramanian, N.; Lee, S.J. ; Kwong, D.L.
92004Germanium p- & n-MOSFETs fabricated with novel surface passivation (plasma-PH 3 and thin AlN) and TaN/HfO 2 gate stackWhang, S.J. ; Lee, S.J. ; Gao, F.; Wu, N.; Zhu, C.X. ; Pan, J.S.; Tang, L.J.; Kwong, D.L.
10Feb-2005Germanium pMOSFETs With Schottky-barrier Germanide S/D, high-Κ gate dielectric and metal gateZhu, S. ; Li, R.; Lee, S.J. ; Li, M.F. ; Du, A.; Singh, J.; Zhu, C. ; Chin, A.; Kwong, D.L.
11Feb-2005Germanium pMOSFETs With Schottky-barrier Germanide S/D, high-Κ gate dielectric and metal gateZhu, S. ; Li, R.; Lee, S.J. ; Li, M.F. ; Du, A.; Singh, J.; Zhu, C. ; Chin, A.; Kwong, D.L.
122007High quality single crystal Al-catalyzed Si nanowireWhang, S.J. ; Lee, S.J. ; Yang, W.; Cho, B.J. ; Liew, Y.F.; Li, K.; Bera, L.K.; Kwong, D.L.
13Nov-2007Impact of local strain from selective epitaxial germanium with thin Si/SiGe buffer on high-performance p-i-n photodetectors with a low thermal budgetLoh, W.Y.; Wang, J. ; Ye, J.D.; Yang, R.; Nguyen, H.S.; Chua, K.T.; Song, J.F.; Loh, T.H.; Xiong, Y.Z.; Lee, S.J. ; Yu, M.B.; Lo, G.Q.; Kwong, D.L.
142008Improved carrier injection in gate-all-around Schottky barrier silicon nanowire field-effect transistorsPeng, J.W.; Lee, S.J. ; Liang, G.C.A. ; Singh, N.; Zhu, S.Y.; Lo, G.Q.; Kwong, D.L.
152007Integration of tensile-strained Ge p-i-n photodetector on advanced CMOS platformWang, J. ; Loh, W.Y.; Zang, H.; Yu, M.B.; Chua, K.T.; Loh, T.H.; Ye, J.D.; Yang, R.; Wang, X.L.; Lee, S.J. ; Cho, B.J. ; Lo, G.Q.; Kwong, D.L.
162008Inversion-mode self-aligned In0.53Ga0.47 As N-channel metal-oxide-semiconductor field-effect transistor with HfAlO gate dielectric and TaN metal gateLin, J.Q.; Lee, S.J. ; Oh, H.J. ; Lo, G.Q.; Kwong, D.L.; Chi, D.Z.
17Oct-2004Low temperature MOSFET technology with Schottky barrier source/drain, high-K gate dielectric and metal gate electrodeZhu, S. ; Yu, H.Y. ; Chen, J.D. ; Whang, S.J. ; Chen, J.H. ; Shen, C.; Zhu, C. ; Lee, S.J. ; Li, M.F. ; Chan, D.S.H. ; Yoo, W.J. ; Du, A.; Tung, C.H.; Singh, J.; Chin, A.; Kwong, D.L.
18Sep-2008Low-voltage high-speed (18 GHz/1 V) evanescent-coupled thin-film-Ge lateral PIN photodetectors integrated on Si waveguideWang, J. ; Loh, W.Y.; Chua, K.T.; Zang, H.; Xiong, Y.Z.; Tan, S.M.F.; Yu, M.B.; Lee, S.J. ; Lo, G.Q.; Kwong, D.L.
1910-May-2006Metal-germanide Schottky Source/Drain transistor on Germanium substrate for future CMOS technologyLi, R.; Yao, H.B.; Lee, S.J. ; Chi, D.Z.; Yu, M.B.; Lo, G.Q.; Kwong, D.L.
202005Modulation of the Ni FUSI workfunction by Yb doping: From midgap to n-type band-edgeYu, H.Y.; Chen, J.D. ; Li, M.F. ; Lee, S.J. ; Kwong, D.L.; Van Dal, M.; Kittl, J.A.; Lauwers, A.; Augendre, E.; Kubicek, S.; Zhao, C.; Bender, H.; Brijs, B.; Geenen, L.; Benedetti, A.; Absil, P.; Jurczak, M.; Biesemans, S.