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Zhou Qian

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Full Name
Zhou Qian
(not current staff)
Variants
Zhou, Q.
 
Main Affiliation
 
Faculty
 
Email
elezhou@nus.edu.sg
 
Other emails
 

Publications

Refined By:
Author:  Yang, Y.

Results 1-13 of 13 (Search time: 0.006 seconds).

Issue DateTitleAuthor(s)
12013Asymetrically strained high performance Germanium gate-all-around nanowire p-FETs featuring 3.5 nm wire width and contractible phase change liner stressor (Ge2Sb2Te5)Cheng, R. ; Liu, B.; Guo, P.; Yang, Y.; Zhou, Q. ; Gong, X.; Dong, Y.; Tong, Y.; Bourdelle, K.; Daval, N.; Delprat, D.; Nguyen, B.-Y.; Augendre, E.; Yeo, Y.-C. 
2May-2012Dopant segregation and nickel stanogermanide contact formation on p +Ge 0.947Sn 0.053 source/drainHan, G. ; Su, S.; Zhou, Q. ; Guo, P.; Yang, Y.; Zhan, C.; Wang, L.; Wang, W.; Wang, Q.; Xue, C.; Cheng, B.; Yeo, Y.-C. 
328-Jul-2013Ge0.97Sn0.03 p-channel metal-oxide-semiconductor field-effect transistors: Impact of Si surface passivation layer thickness and post metal annealingGuo, P.; Han, G. ; Gong, X.; Liu, B.; Yang, Y.; Wang, W.; Zhou, Q. ; Pan, J.; Zhang, Z.; Soon Tok, E. ; Yeo, Y.-C. 
42013Germanium multiple-gate field-effect transistor with in situ boron-doped raised source/drainLiu, B.; Zhan, C.; Yang, Y.; Cheng, R. ; Guo, P.; Zhou, Q. ; Kong, E.Y.-J.; Daval, N.; Veytizou, C.; Delprat, D.; Nguyen, B.-Y.; Yeo, Y.-C. 
52013High performance Ge CMOS with novel InAlP-passivated channels for future sub-10 nm technology node applicationsLiu, B.; Gong, X.; Cheng, R. ; Guo, P.; Zhou, Q. ; Owen, M.H.S.; Guo, C.; Wang, L.; Wang, W.; Yang, Y.; Yeo, Y.-C. ; Wan, C.-T.; Chen, S.-H.; Cheng, C.-C.; Lin, Y.-R.; Wu, C.-H.; Ko, C.-H.; Wann, C.H.
62012High performance Ω-gate Ge FinFET featuring low temperature Si 2H 6 passivation and implantless Schottky-barrier NiGe metallic source/drainLiu, B.; Gong, X.; Han, G. ; Lim, P.S.Y.; Tong, Y.; Zhou, Q. ; Yang, Y.; Daval, N.; Pulido, M.; Delprat, D.; Nguyen, B.-Y.; Yeo, Y.-C. 
72011High-mobility germanium-tin (GeSn) P-channel MOSFETs featuring metallic source/drain and sub-370°C process modulesHan, G. ; Su, S.; Zhan, C.; Zhou, Q. ; Yang, Y.; Wang, L.; Guo, P.; Wei, W.; Wong, C.P.; Shen, Z.X.; Cheng, B.; Yeo, Y.-C. 
82012High-performance germanium ω-Gate MuGFET with schottky-barrier nickel germanide source/drain and low-temperature disilane-passivated gate stackLiu, B.; Gong, X.; Han, G. ; Lim, P.S.Y.; Tong, Y.; Zhou, Q. ; Yang, Y.; Daval, N.; Veytizou, C.; Delprat, D.; Nguyen, B.-Y.; Yeo, Y.-C. 
92012In situ boron (B) doped germanium (Ge:B) grown on (100), (110), and (111) silicon: Crystal orientation and b incorporation effectsHan, G. ; Zhou, Q. ; Guo, P.; Wang, W.; Yang, Y.; Yeo, Y.-C. 
102012Metal stanogermanide contacts with enhanced thermal stability for high mobility germanium-tin field-effect transistorWang, L.; Han, G. ; Su, S.; Zhou, Q. ; Yang, Y.; Guo, P.; Wang, W.; Tong, Y.; Lim, P.S.Y.; Xue, C.; Wang, Q.; Cheng, B.; Yeo, Y.-C. 
1111-Apr-2011Silicon-based tunneling field-effect transistor with elevated germanium source formed on (110) silicon substrateHan, G. ; Guo, P.; Yang, Y.; Zhan, C.; Zhou, Q. ; Yeo, Y.-C. 
122012Thermally stable multi-phase nickel-platinum stanogermanide contacts for germanium-tin channel MOSFETsWang, L.; Han, G. ; Su, S.; Zhou, Q. ; Yang, Y.; Guo, P.; Wang, W.; Tong, Y.; Lim, P.S.Y.; Liu, B.; Kong, E.Y.-J.; Xue, C.; Wang, Q.; Cheng, B.; Yeo, Y.-C. 
132013Uniaxially strained germanium-tin (GeSn) gate-all-around nanowire PFETs enabled by a novel top-down nanowire formation technologyGong, X.; Han, G. ; Su, S.; Cheng, R. ; Guo, P.; Bai, F.; Yang, Y.; Zhou, Q. ; Liu, B.; Goh, K.H.; Zhang, G.; Xue, C.; Cheng, B.; Yeo, Y.-C.