Full Name
Zhou Qian
(not current staff)
Variants
Zhou, Q.
 
 
 
Email
elezhou@nus.edu.sg
 
Other emails
 

Publications

Refined By:
Date Issued:  2013

Results 1-11 of 11 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
12013A new expandible ZnS-SiO2 liner stressor for n-channel FinFETsDing, Y.; Tong, X.; Zhou, Q. ; Liu, B.; Gyanathan, A.; Tong, Y.; Yeo, Y.-C. 
22013Asymetrically strained high performance Germanium gate-all-around nanowire p-FETs featuring 3.5 nm wire width and contractible phase change liner stressor (Ge2Sb2Te5)Cheng, R. ; Liu, B.; Guo, P.; Yang, Y.; Zhou, Q. ; Gong, X.; Dong, Y.; Tong, Y.; Bourdelle, K.; Daval, N.; Delprat, D.; Nguyen, B.-Y.; Augendre, E.; Yeo, Y.-C. 
32013Contact resistance reduction for strained N-MOSFETs with silicon-carbon source/drain utilizing aluminum ion implant and aluminum profile engineeringZhou, Q. ; Koh, S.-M.; Thanigaivelan, T.; Henry, T.; Yeo, Y.-C. 
4Jan-2013Crystal structure and epitaxial relationship of Ni4InGaAs 2 films formed on InGaAs by annealingIvana; Foo, Y.L.; Zhang, X.; Zhou, Q. ; Pan, J.; Kong, E.; Owen, M.H.S.; Yeo, Y.-C. 
528-Jul-2013Ge0.97Sn0.03 p-channel metal-oxide-semiconductor field-effect transistors: Impact of Si surface passivation layer thickness and post metal annealingGuo, P.; Han, G. ; Gong, X.; Liu, B.; Yang, Y.; Wang, W.; Zhou, Q. ; Pan, J.; Zhang, Z.; Soon Tok, E. ; Yeo, Y.-C. 
62013Germanium multiple-gate field-effect transistor with in situ boron-doped raised source/drainLiu, B.; Zhan, C.; Yang, Y.; Cheng, R. ; Guo, P.; Zhou, Q. ; Kong, E.Y.-J.; Daval, N.; Veytizou, C.; Delprat, D.; Nguyen, B.-Y.; Yeo, Y.-C. 
72013High performance Ge CMOS with novel InAlP-passivated channels for future sub-10 nm technology node applicationsLiu, B.; Gong, X.; Cheng, R. ; Guo, P.; Zhou, Q. ; Owen, M.H.S.; Guo, C.; Wang, L.; Wang, W.; Yang, Y.; Yeo, Y.-C. ; Wan, C.-T.; Chen, S.-H.; Cheng, C.-C.; Lin, Y.-R.; Wu, C.-H.; Ko, C.-H.; Wann, C.H.
82013Investigation of Pd-InGaAs for the formation of self-aligned source/drain contacts in InGaAs metal-oxide-semiconductor field-effect transistorsKong, E.Y.-J.; Ivana; Zhang, X.; Zhou, Q. ; Pan, J.; Zhang, Z.; Yeo, Y.-C. 
97-Jan-2013NiSi2 formation through annealing of nickel and dysprosium stack on Si(100) and impact on effective Schottky barrier heightLim, P.S.Y.; Chi, D.Z.; Zhou, Q. ; Yeo, Y.-C. 
102013Strain engineering of ultra-thin silicon-on-insulator structures using through-buried-oxide ion implantation and crystallizationDing, Y.; Cheng, R. ; Zhou, Q. ; Du, A.; Daval, N.; Nguyen, B.-Y.; Yeo, Y.-C. 
112013Uniaxially strained germanium-tin (GeSn) gate-all-around nanowire PFETs enabled by a novel top-down nanowire formation technologyGong, X.; Han, G. ; Su, S.; Cheng, R. ; Guo, P.; Bai, F.; Yang, Y.; Zhou, Q. ; Liu, B.; Goh, K.H.; Zhang, G.; Xue, C.; Cheng, B.; Yeo, Y.-C.