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ZENG MINGGANG

rp00810

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Full Name
ZENG MINGGANG
(not current staff)
Variants
Zeng, M.
Zeng, M.-G.
Zeng, M.G.
 
Main Affiliation
 
Faculty
 
Email
phyzengm@nus.edu.sg
 
Other emails
 

Publications

Refined By:
Department:  PHYSICS
Department:  COLLEGE OF DESIGN AND ENGINEERING

Results 1-10 of 10 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
12015Electrically tunable in-plane anisotropic magnetoresistance in topological insulator BiSbTeSe2 NanodevicesLu Y. ; Xu W. ; Zeng M. ; Yao G. ; Shen L. ; Yang M. ; Luo Z. ; Pan F. ; Wu K. ; Das T. ; He P.; Jiang J.; Martin J. ; Feng Y.P. ; Lin H. ; Wang X.-S. 
22010First principles prediction of materials for spintronics: From bulk to nanoShen, L. ; Zeng, M.G. ; Pan, H.; Lim, C.C.; Lu, Y.H. ; Xu, B. ; Sun, J.T. ; Yi, J.B. ; Yang, K.S.; Feng, Y.P. ; Ding, J. ; Yang, S.W.; Dai, Y.; Wee, A. ; Lin, J.Y.
32009Gate-controlled nonvolatile graphene-ferroelectric memoryZheng, Y. ; Ni, G.-X.; Toh, C.-T. ; Zeng, M.-G. ; Chen, S.-T.; Yao, K.; Özyilmaz, B. 
49-Mar-2011Graphene-based spin caloritronicsZeng, M. ; Feng, Y. ; Liang, G. 
52014Magnetocrystalline anisotropy and its electric-field-assisted switching of Heusler-compound-based perpendicular magnetic tunnel junctionsBai Z. ; Shen L. ; Cai Y. ; Wu Q.; Zeng M. ; Han G. ; Feng Y.P. 
621-Jul-2011Observation of long spin-relaxation times in bilayer graphene at room temperatureYang, T.-Y.; Balakrishnan, J.; Volmer, F.; AVSAR,AHMET ; Jaiswal, M. ; Samm, J.; Ali, S.R.; Pachoud, A.; Zeng, M. ; Popinciuc, M.; Güntherodt, G.; Beschoten, B.; Özyilmaz, B. 
71-Oct-2012Spin filtering and spin separating effects in U-shaped topological insulator devicesZeng, M. ; Liang, G. 
87-Jan-2013Spin-dependent thermoelectric effects in graphene-based spin valvesZeng, M. ; Huang, W.; Liang, G. 
919-Sep-2011Thermally induced currents in graphene-based heterostructureZeng, M. ; Feng, Y. ; Liang, G. 
102015Ultrathin BaTiO3-Based Ferroelectric Tunnel Junctions through Interface EngineeringSulaev A.; Zeng M. ; Shen S.-Q.; Cho S.K.; Zhu W.G.; Feng Y.P. ; Eremeev S.V.; Kawazoe Y.; Shen L. ; Wang L.