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Ding Shi Jin

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Full Name
Ding Shi Jin
(not current staff)
Variants
Shi, J.
Ding, S.-J.
Ding, S.J.
 
Main Affiliation
 
Faculty
 
Email
eledsj@nus.edu.sg
 

Publications

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Department:  ELECTRICAL AND COMPUTER ENGINEERING

Results 1-13 of 13 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
12004A comparison study of high-density MIM capacitors with ALD HfO 2-Al 2O 3 laminated, sandwiched and stacked dielectricsDing, S.-J. ; Hu, H.; Zhu, C. ; Kim, S.J. ; Li, M.F. ; Cho, B.J. ; Chin, A.; Kwong, D.-L.
2Jul-2003Characteristics and mechanism of inductive coupled plasma etching of hydrogenated amorphous silicon carbide filmsChoi, W.K. ; Shi, J. ; Chor, E.F. 
32004Engineering of voltage nonlinearity in high-K MIM capacitor for analog/mixed-signal ICsKim, S.J. ; Cho, B.J. ; Li, M.-F. ; Ding, S.-J. ; Yu, M.B.; Zhu, C. ; Chin, A.; Kwong, D.-L.
4Oct-2004Evidence and understanding of ALD HfO2-Al2O3 laminate MIM capacitors outperforming sandwich counterpartsDing, S.-J. ; Hu, H.; Zhu, C. ; Li, M.F. ; Kim, S.J. ; Cho, B.J. ; Chan, D.S.H. ; Yu, M.B.; Du, A.Y.; Chin, A.; Kwong, D.-L.
52003High Performance ALD HfO 2-Al 2O 3 Laminate MIM Capacitors for RF and Mixed Signal IC ApplicationsHu, H.; Ding, S.-J. ; Lim, H.F. ; Zhu, C. ; Li, M.F. ; Kim, S.J. ; Yu, X.F.; Chen, J.H. ; Yong, Y.F.; Cho, B.J. ; Chan, D.S.H. ; Rustagi, S.C.; Yu, M.B.; Tung, C.H.; Du, A.; My, D.; Foo, P.D.; Chin, A.; Kwong, D.-L.
62004HiGH-kappa; MIM capacitors with atomic-layer-deposited HfO 2-Al2O3 laminated and sandwiched dielectrics for analog circuit applicationsDing, S.-J. ; Zhu, C. ; Li, M.-F. ; Cho, B.J. ; Kwong, D.-L.
7Dec-2003High-Performance MIM Capacitor Using ALD High-κ HfO 2-Al2O3 Laminate DielectricsDing, S.-J. ; Hu, H.; Lim, H.F. ; Kim, S.J. ; Yu, X.F.; Zhu, C. ; Li, M.F. ; Cho, B.J. ; Chan, D.S.H. ; Rustagi, S.C.; Yu, M.B.; Chin, A.; Kwong, D.-L.
820-Nov-2002ICP etching and structure study of PECVD SiC filmsShi, J. ; Choi, W.K. ; Chor, E.F. 
920-Mar-2002ICP etching of RF sputtered and PECVD silicon carbide filmsShi, J. ; Chor, E.F. ; Choi, W.K. 
10Aug-2004Improvement of voltage linearity in high-κ MIM capacitors using HfO2-SiO2 stacked dielectricKim, S.J. ; Cho, B.J. ; Li, M.-F. ; Ding, S.-J. ; Zhu, C. ; Yu, M.B.; Narayanan, B.; Chin, A.; Kwong, D.-L.
1123-Feb-2005Non-volatile polymer memory device based on a novel copolymer of N-vinylcarbazole and Eu-complexed vinylbenzoateLing, Q. ; Song, Y.; Ding, S.J. ; Zhu, C. ; Chan, D.S.H. ; Kwong, D.-L.; Kang, E.-T. ; Neoh, K.-G. 
1223-Feb-2005Non-volatile polymer memory device based on a novel copolymer of N-vinylcarbazole and Eu-complexed vinylbenzoateLing, Q. ; Song, Y.; Ding, S.J. ; Zhu, C. ; Chan, D.S.H. ; Kwong, D.-L.; Kang, E.-T. ; Neoh, K.-G. 
13Jun-2004RF, DC, and reliability characteristics of ALD HfO2-Al2O3 laminate MIM capacitors for Si RF IC applicationsDing, S.-J. ; Hu, H.; Zhu, C. ; Kim, S.J. ; Yu, X.; Li, M.-F. ; Cho, B.J. ; Chan, D.S.H. ; Yu, M.B.; Rustagi, S.C.; Chin, A.; Kwong, D.-L.