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Samudra,Ganesh S

rp00141

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Full Name
Samudra,Ganesh S
Variants
Samudra, G.G.
SAMUDRA, GANESH SHANKAR
Samudra', G.S.
Samudra, Ganesh S.
Samudra, Ganesh Shankar
Shankar Samudra, Ganesh
Samudra, G.S.
Samudra, Ganesh
Samudra, G.
 
Main Affiliation
 
Faculty
 
Email
eleshanr@nus.edu.sg
 

Publications

Refined By:
Subject:  FinFET

Results 1-11 of 11 (Search time: 3.365 seconds).

Issue DateTitleAuthor(s)
1Sep-2004A FinFET and Tri-gate MOSFET's channel structure patterning and its influence on the device performanceJagar, S.; Singh, N.; Mehta, S.S.; Agrawal, N.; Samudra, G. ; Balasubramanian, N.
2Apr-2012Contact technology for strained nFinFETs with silicon-carbon source/drain stressors featuring sulfur implant and segregationKoh, S.-M.; Samudra, G.S. ; Yeo, Y.-C. 
3Sep-2006Drive-current enhancement in FinFETs using gate-induced stressTan, K.-M.; Liow, T.-Y.; Lee, R.T.P. ; Tung, C.-H.; Samudra, G.S. ; Yoo, W.-J. ; Yeo, Y.-C. 
4Feb-2007N-channel FinFETs with 25-nm gate length and Schottky-Barrier source and drain featuring Ytterbium silicideLee, R.T.P. ; Lim, A.E.-J.; Tan, K.-M.; Liow, T.-Y.; Lo, G.-Q.; Samudra, G.S. ; Chi, D.Z.; Yeo, Y.-C. 
525-Apr-2008Novel extended-Pi shaped silicon - germanium source/drain stressors for strain and performance enhancement in p-channel tri-gate fin-type field-effect transistorTan, K.-M.; Liow, T.-Y.; Lee, R.T.P. ; Zhu, M. ; Hoe, K.-M.; Tung, C.-H.; Balasubramanian, N.; Samudra, G.S. ; Yeo, Y.-C. 
6May-2008P-channel tri-gate FinFETs featuring Ni1-yPtySiGe source/drain contacts for enhanced drive current performanceLee, R.T.-P. ; Tan, K.-M.; Lim, A.E.-J.; Liow, T.-Y.; Samudra, G.S. ; Chi, D.-Z.; Yeo, Y.-C. 
72007Simulation of multiple gate FinFET device gate capacitance and performance with gate length and pitch scalingZhao, H.; Agrawal, N.; Javier, R.; Rustagi, S.C.; Jurczak, M.; Yeo, Y.-C. ; Samudra, G.S. 
8Jan-2008Spacer removal technique for boosting strain in n-channel FinFETs with silicon-carbon source and drain stressorsLiow, T.-Y.; Tan, K.-M.; Lee, R.T.P. ; Zhu, M. ; Hoe, K.-M.; Samudra, G.S. ; Balasubramanian, N.; Yeo, Y.-C. 
92008Strained n-channel FinFETs featuring in situ doped silicon-carbon (Si1-yCy) source and drain stressors with high carbon contentLiow, T.-Y.; Tan, K.-M.; Weeks, D.; Lee, R.T.P. ; Zhu, M. ; Hoe, K.-M.; Tung, C.-H.; Bauer, M.; Spear, J.; Thomas, S.G.; Samudra, G.S. ; Balasubramanian, N.; Yeo, Y.-C. 
10Oct-2007Strained p-channel FinFETs with extended Π-shaped silicon-germanium source and drain stressorsTan, K.-M.; Liow, T.-Y.; Lee, R.T.P. ; Hoe, K.M.; Tung, C.-H.; Balasubramanian, N.; Samudra, G.S. ; Yeo, Y.-C. 
1124-Apr-2007Sub-30nm strained p-channel fin-type field-effect transistors with condensed SiGe source/drain stressorsTan, K.-M.; Liow, T.-Y.; Lee, R.T.P. ; Chui, K.-J.; Tung, C.-H.; Balasubramanian, N.; Samudra, G.S. ; Yoo, W.-J. ; Yeo, Y.-C.