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Results 1-20 of 72 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
11993Velocity-field characteristics of selectively doped GaAs/AlxGa1-xAs quantum-well heterostructuresTan, L.S. ; Chua, S.J. ; Arora, V.K. 
21-Dec-2017Upper Extremity Innervation Patterns and Clinical Implications for Nerve and Tendon TransferLee, EY ; Sebastin, SJ ; Cheah, A ; Kumar, VP ; Lim, AYT 
32006Understanding competing application usage with the theory of planned behaviorLin, J. ; Chan, H.C. ; Wei, K.K.
42006Ultrafast-laser-induced parallel phase-change nanolithographyLin, Y.; Hong, M.H.; Chong, T.C.; Lim, C.S. ; Chen, G.X. ; Tan, L.S. ; Wang, Z.B.; Shi, L.P.
513-Feb-2018Trust Ecologies and Channel Complementarity for Information Seeking in Cancer PreventionSeow Ting Lee; Mohan Dutta ; Julian Lin ; Pauline Luk; Satveer Gill Kaur 
6Jun-2000Thermal stability of MISFET with low-temp molecular-beam epitaxy-grown GaAs and Al0.3Ga0.7As gate InsRao, R.V.V.V.J. ; Chong, T.C. ; Tan, L.S. ; Lau, W.S. 
7Jul-2014The effects of gratifications on intention to read citizen journalism news: The mediating effect of attitudeLin, Yuan Cuo Julian 
8Jun-2012The antecedents of salespeople's relational behaviorsGuo, L. ; Ng, I.C.L.
9Apr-2012Testing the information technology continuance model on a mandatory sms-based student response systemLin, J. ; Rivera-S├ínchez, M. 
10Jun-2006Synthesis of GaN nanowires on gold-coated substrates by pulsed laser ablationNg, D.K.T.; Tan, L.S. ; Hong, M.H. 
1112-Feb-2007Surface nanostructuring by femtosecond laser irradiation through near-field scanning optical microscopyLin, Y. ; Hong, M.H. ; Wang, W.J.; Wang, Z.B.; Chen, G.X. ; Xie, Q.; Tan, L.S. ; Chong, T.C. 
121-Oct-2007Sub-micron surface patterning by laser irradiation through microlens arraysLim, C.S. ; Hong, M.H. ; Lin, Y. ; Chen, G.X. ; Senthil Kumar, A. ; Rahman, M. ; Tan, L.S. ; Fuh, J.Y.H. ; Lim, G.C.
131992Study of electron traps in semi-insulating gallium-arsenide buffer layers for the suppression of backgating by the zero-bias thermally stimulated current techniqueLau, W.S. ; Chong, T.C. ; Tan, L.S. ; Goo, C.H.; Goh, K.S.; Lee, K.M.
141-Aug-2004Study of activation of beryllium implantation in gallium nitrideWang, H.T.; Tan, L.S. ; Chor, E.F. 
1529-May-2006Structural and electrical characterizations of the pulsed-laser-deposition- grown Sc2O3/GaN heterostructureLiu, C.; Chor, E.F. ; Tan, L.S. ; Dong, Y.
162000Spreading resistance profiling of ultrashallow junction NPN BJT, with carrier redistribution effectTan, L.C.P.; Tan, L.S. ; Leong, M.S. 
172009Silane-ammonia surface passivation for gallium arsenide surface-channel n-MOSFETsChin, H.-C.; Zhu, M. ; Liu, X.; Lee, H.-K.; Shi, L.; Tan, L.-S. ; Yeo, Y.-C. 
1831-Jan-2008Selective growth of gallium nitride nanowires by femtosecond laser patterningNg, D.K.T.; Hong, M.H. ; Tan, L.S. ; Zhou, Y.; Chen, G.X. 
197-Jan-2002Responsivities of n-type GaAs/InGaAs/AlGaAs step multiple-quantum-well infrared detectorsCheah, C.W.; Karunasiri, G. ; Tan, L.S. ; Zhou, L.F.
20Aug-2010Pulsed laser annealing of ultra-shallow junctions in silicon-germaniumTan, L.S. ; Tan, J.Y.; Begum, A.; Hong, M.H. ; Du, A.Y.; Bhat, M.; Wang, X.C.