INSTITUTE OF MICROELECTRONICS

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Results 21-40 of 138 (Search time: 0.003 seconds).

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	Issue Date	Title	Author(s)
21	1995	Structural properties of amorphous silicon carbide films by plasma-enhanced chemical vapor deposition	Choi, W.K. ; Chan, Y.M.; Ling, C.H. ; Lee, Y.; Gopalakrishnan, R. ; Tan, K.L.
22	2004	Structural analysis of breakdown in ultrathin gate dielectrics using transmission electron microscopy	Pey, K.L.; Tung, C.H.; Tang, L.J.; Ranjan, R.; Radhakrishnan, M.K. ; Lin, W.H.; Lombardo, S.; Palumbo, F.
23	17-Oct-2006	Software instructions utilizing a hardwired circuit	ALDRIDGE, CHRISTOPHER ; PRADHAN, MRIDULA; LEE, CHONG YEE
24	Mar-1995	Small area X-ray photoelectron spectroscopy (SAXPS) analysis of microscopic contamination in semiconductor materials and processes	Marks, M.R. ; Kintrup, L.; Bittigau, K.
25	15-Feb-1996	Skin-core morphology of in situ composites based on polycarbonate and a liquid crystalline polymer	Hu, X.; Lin, Q.; Yee, A.F.; Lu, D.
26	6-Oct-2003	Size difference in dielectric-breakdown-induced epitaxy in narrow n- and p-metal oxide semiconductor field effect transistors	Pey, K.L.; Tung, C.H.; Tang, L.J.; Lin, W.H.; Radhakrishnan, M.K.
27	1995	Simulation of three-dimensional wirebond deformation during transfer molding	Tay, A.A.O. ; Yeo, K.S. ; Wu, J.H.
28	Aug-1993	Semiconductor parameters extraction using cathodoluminescence in the scanning electron microscope	Chan, Daniel S.H. ; Pey, Kin Leong ; Phang, Jacob C.H.
29	Aug-1993	Semiconductor parameters extraction using cathodoluminescence in the scanning electron microscope	Chan, Daniel S.H. ; Pey, Kin Leong ; Phang, Jacob C.H.
30	May-2004	Schottky-barrier S/D MOSFETs with high-K gate dielectrics and metal-gate electrode	Zhu, S. ; Yu, H.Y. ; Whang, S.J. ; Chen, J.H. ; Shen, C.; Zhu, C. ; Lee, S.J. ; Li, M.F. ; Chan, D.S.H. ; Yoo, W.J. ; Du, A.; Tung, C.H. ; Singh, J.; Chin, A.; Kwong, D.L.
31	12-Dec-1995	Programmable current source correction circuit	SINGH, RAMINDER J. ; BHATT, ANSUYA P. ; TAN, KHEN S.
32	1999	Predicting plasma charging damage in ultra thin gate oxide by using nondestructive DCIV technique	Guan, Hao; Li, M.F. ; Zhang, Yaohui ; Cho, B.J. ; Jie, B.B.; Xie, Joseph; Wang, J.L.F. ; Yen, Andrew C. ; Sheng, George T.T.; Dong, Zhong; Li, Weidan
33	1999	Predicting plasma charging damage in ultra thin gate oxide by using nondestructive DCIV technique	Guan, Hao; Li, M.F. ; Zhang, Yaohui ; Cho, B.J. ; Jie, B.B.; Xie, Joseph; Wang, J.L.F. ; Yen, Andrew C. ; Sheng, George T.T.; Dong, Zhong; Li, Weidan
34	May-1994	Predicting delamination in plastic IC packages and determining suitable mold compound properties	Tay, A.A.O. ; Tan, G.L. ; Lim, T.B.
35	May-1997	Precision transmission electron microscopy sample preparation using a focused ion beam by extraction method	Sheng, T.T. ; Goh, G.P.; Tung, C.H. ; Wang, L.F.
36	May-2011	Polymer jet printing of SU-8 micro-dot patterns on Si surface: Optimization of tribological properties	Tay, N.B. ; Minn, M. ; Sinha, S.K.
37	Oct-2001	Plasma polymerization and deposition of glycidyl methacrylate on Si(100) surface for adhesion improvement with polyimide	Zou, X.P.; Kang, E.T. ; Neoh, K.G.; Zhang, Y. ; Tan, K.L. ; Cui, C.Q. ; Lim, T.B.
38	2002	Physical analysis of Ti-migration in 33 Å gate oxide breakdown	Pey, K.L. ; Tung, C.H. ; Lin, W.H.; Radhakrishnan, M.K.
39	1999	Performance of titanium and amorphous germanium microbolometer infrared detectors	Ramakrishna, M.V.S.; Karunasiri, G. ; Sridhar, U. ; Chen, G.
40	8-Aug-2000	Passivation of copper interconnect surfaces with a passivating metal layer	CHAN, LAP; YAP, KUAN PEI; TEE, KHENG CHOK; IP, FLORA S.; LOH, WYE BOON