INSTITUTE OF MICROELECTRONICS

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	Issue Date	Title	Author(s)
101	Oct-2009	Enhanced sensitivity of small-size (with 1-μm gate length) junction-field-effect-transistor-based germanium photodetector using two-step germanium epitaxy by ultrahigh vacuum chemical vapor deposition	Wang, J. ; Zang, H.; Yu, M.B.; Xiong, Y.Z.; Lo, G.Q.; Kwong, D.L.; Lee, S.J.
102	21-Feb-1996	Electrochemical copolymerization of aniline and metanilic acid	Lee, J.Y. ; Cui, C.Q.
103	Mar-1995	Electrical and structural studies of lithium fluorophosphate glasses	Chowdari, B.V.R. ; Mok, K.F. ; Xie, J.M.; Gopalakrishnan, R.
104	1996	Efficient receiver structure for GSM mobile radio	Wesołowski, K.; Krenz, R.; Das, K.
105	Feb-1995	Effect of wirebond geometry and die setting on wire sweep	Tay, A.A.O. ; Yeo, K.S. ; Wu, J.H.
106	1995	Effect of oxide field on hot carrier induced degradation in CMOS gate oxide	Zhao, S.P. ; Taylor, S.
107	Nov-1995	Effect of micro-extraction field and physical dimensions on the charging dynamics of integrated circuit passivation layer probe-holes in the electron beam tester	Sim, K.S. ; Phang, J.C.H. ; Chan, D.S.H.
108	2000	Effect of delamination on the thermal fatigue of solder joints in flip chips	Ong, E.T.; Tay, A.A.O. ; Wu, J.H.
109	2000	Dummy gated radio frequency VDMOSFET with high breakdown voltage and low feedback capacitance	Xu, S.; Ren, C.; Foo, P.-D. ; Liu, Y.; Su, Y.
110	21-Nov-1995	Double reflection cathodoluminescence detector with extremely high discrimination against backscattered electrons	CHAN, DANIEL S. H. ; LEONG, KIN ; PHANG, JACOB C. H.
111	1996	Double heterostructure laser diode emitting at 1·06 μm using quaternary alloy of InGaAlAs	Chua, S.J. ; Ramam, A. ; Lim, N. ; Gopalakrishnan, R. ; Tan, K.L.
12	19-Aug-2008	Divider apparatus and associated method	ALDRIDGE, CHRISTOPHER ANTHONY ; TAN, WEE TIONG; KANG, CHIA KWANG
13	Mar-1997	Die attach failures related to wafer back metal processing - An AES study	Radhakrishnan, M.K.
14	2004	Device reliability and failure mechanisms related to gate dielectrics and interconnects	Radhakrishnan, M.K.
15	Sep-1998	Detecting underfill delamination and cracks in flip chip on board assemblies using infrared microscope	Lu, J.; Trigg, A.; Wu, J. ; Chai, T.
16	1996	Design and characterisation of a single-reflection, solid-state detector with high discrimination against backscattered electrons for cathodoluminescence microscopy	Pey, K.L. ; Phang, J.C.H. ; Chan, D.S.H. ; Leong, Y.K.
17	1993	Criterion for predicting delamination in plastic IC packages	Tay, A.A.O. ; Tan, G.L. ; Lim, T.B.
18	Sep-2003	Correlation of failure mechanism of constant-current-stress and constant-voltage-stress breakdowns in ultrathin gate oxides of nMOSFETs by TEM	Pey, K.L.; Tung, C.H.; Radhakrishnan, M.K. ; Tang, L.J.; Sun, Y.; Wang, X.D.; Lin, W.H.
19	1999	Construct GaAs FET dc model from drain-port dc power and conductance	Liu, L. ; Lin, F. ; Kooi, P.S. ; Leong, M.S.
20	Mar-1994	Combining electron and focused ion beam techniques for failure analysis and design verification of integrated circuits	Heiland, R.; Leslie, A.