Organization name

Results 1-20 of 8026 (Search time: 0.033 seconds).

Issue DateTitleAuthor(s)
115-Mar-2019ZnO Nanosheets Abundant in Oxygen Vacancies Derived from Metal-Organic Frameworks for ppb-Level Gas SensingYuan, Hongye ; Aljneibi, Saif Abdulla Ali Alateeqi; Yuan, Jiaren; Wang, Yuxiang ; Liu, Hui; Fang, Jie ; Tang, Chunhua ; Yan, Xiaohong; Cai, Hong; Gu, Yuandong ; Pennycook, Stephen John ; Tao, Jifang; Zhao, Dan 
22013ZnO nanoneedle/H2O solid-liquid heterojunctionbased self-powered ultraviolet detectorLi, Q; Wei, L; Xie, Y; Zhang, K; Liu, L; Zhu, D ; Jiao, J; Chen, Y; Yan, S; Liu, G; Mei, L
32017ZnO nano-rod devices for intradermal delivery and immunizationNayak, T.R ; Wang, H ; Pant, A ; Zheng, M ; Junginger, H ; Goh, W.J ; Lee, C.K ; Zou, S; Alonso, S ; Czarny, B; Storm, G; Sow, C.H ; Lee, C ; Pastorin, G 
42006ZnO homojunctions grown by cosputtering ZnO and Zn3P 2 targetsHu, G. ; Gong, H. ; Chor, E.F. ; Wu, P.
523-Apr-2012ZnO coaxial nanorod homojunction UV light-emitting diodes prepared by aqueous solution methodNguyen, X.S.; Tay, C.B. ; Fitzgerald, E.A.; Chua, S.J. 
62020Zitterbewegung-mediated RKKY coupling in topological insulator thin filmsHo, C.S. ; Tan, S.G. ; Siu, Zhuo Bin ; Jalil, M.B.A. 
717-Dec-2020Zero-bias mid-infrared graphene photodetectors with bulk photoresponse and calibration-free polarization detectionWei, Jingxuan ; Li, Ying; Wang, Lin ; Liao, Wugang ; Dong, Bowei ; Xu, Cheng ; Zhu, Chunxiang ; Ang, Kah-Wee ; Qiu, Cheng-Wei ; Lee, Chengkuo 
82011Zero modes & fractional charge in bilayer grapheneMartinez, J.C. ; Jalil, M.B.A. ; Tan, S.G. 
9Jun-2007Yttrium- and terbium-based interlayer on SiO2 and HfO2 gate dielectrics for work function modulation of nickel fully silicided gate in nMOSFETLim, A.E.-J.; Lee, R.T.P. ; Wang, X.P.; Hwang, W.S.; Tung, C.H.; Samudra, G.S. ; Kwong, D.-L.; Yeo, Y.-C. 
101-Mar-2017Yield, Area, and Energy Optimization in STT-MRAMs Using Failure-Aware ECCPajouhi, Zoha; Fong, Xuanyao ; Raghunathan, Anand; Roy, Kaushik
11Mar-2006Yb-doped Ni FUSI for the n-MOSFETs gate electrode applicationChen, J.D. ; Yu, H.Y.; Li, M.F. ; Kwong, D.-L.; van Dal, M.J.H.; Kittl, J.A.; Lauwers, A.; Absil, P.; Jurczak, M.; Biesemans, S.
1220-Jan-2014Y-shape spin-separator for two-dimensional group-IV nanoribbons based on quantum spin hall effectGupta, G.; Lin, H.; Bansil, A.; Abdul Jalil, M.B. ; Huang, C.-Y.; Tsai, W.-F.; Liang, G. 
132014Xanthoceraside ameliorates mitochondrial dysfunction contributing to the improvement of learning and memory impairment in mice with intracerebroventricular injection of a ? 1-42Ji X.-F.; Chi T.-Y.; Xu Q.; He X.-L.; Zhou X.-Y.; Zhang R. ; Zou L.-B.
1430-Jun-2016X-Ray Crystal Structure, Molecular Structure, Spectral And Antimicrobial Activity of t-(3)-Benzyl-r-(2),c-(6)-diphenylpiperidin-4-oneRAMALINGAM ARULRAJ ; S. Sivakumar; A. Thiruvalluvar; A. Manimekalai
152012Writing process induced media noise measurementAng, S.; Ong, C.L.; Yuan, Z.; Pang, C.K. 
16Aug-2006WORM-type memory device based on a conjugated copolymer containing europium complex in the main chainLing, Q.-D. ; Song, Y.; Teo, E.Y.H. ; Lim, S.-L.; Zhu, C. ; Chan, D.S.H. ; Kwong, D.-L.; Kang, E.-T. ; Neoh, K.-G. 
172008WORM-type device with rectifying effect based on a conjugated copolymer of fluorene and europium complexTan, Y.P.; Song, Y.; Teo, E.Y.H. ; Ling, Q.D. ; Lim, S.L.; Lo, P.G.Q.; Chan, D.S.H. ; Kang, E.T. ; Zhu, C. 
182006Work-function tuning of TaN by high-temperature metal intermixing technique for gate-first CMOS processRen, C.; Chan, D.S.H. ; Loh, W.Y.; Balakumar, S.; Du, A.Y.; Tung, C.H.; Lo, G.Q.; Kumar, R.; Balasubramanian, N.; Kwong, D.-L.
1910-May-2006Work function tuning of metal nitride electrodes for advanced CMOS devicesRen, C.; Faizhal, B.B.; Chan, D.S.H. ; Li, M.-F. ; Yeo, Y.-C. ; Trigg, A.D.; Balasubramanian, N.; Kwong, D.-L.
20Aug-2006Work function tuning and material characteristics of lanthanide-incorporated metal nitride gate electrodes for NMOS device applicationsRen, C.; Chan, D.S.H. ; Li, M.-F. ; Loh, W.-Y.; Balakumar, S.; Tung, C.H.; Balasubramanian, N.; Kwong, D.-L.