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Issue DateTitleAuthor(s)
20070.18m CMOS dual-band UWB LNA with interference rejectionGao, Y.; Zheng, Y.J.; Ooi, B.L. 
Mar-20021 × 2 optical waveguide filters based on multimode interference for 1.3- and 1.55-μm operationLi, B. ; Chua, S.-J. ; Leitz, C.W.; Fitzgerald, E.A.
20091.1 to 1.9GHz CMOS VCO for tuner application with resistively tuned variable inductorCheng, S.J.; Zheng, Y.; Heng, C.H. 
20131.5-μm 10-Gb/s VCSEL link for optical access applicationsAl-Qazwini, Z.; Zhou, J.; Kim, H. 
20131.55-μm, 10-Gb/s VCSEL transmission for optical access networksAl-Qazwini, Z.; Thollabandi, M.; Kim, H. 
Apr-20111/f neural noise reduction and spike feature extraction using a subset of informative samplesYang, Z. ; Hoang, L.; Zhao, Q.; Keefer, E.; Liu, W.
20081/f noise analysis of ZnO nanowire and thin filmKe, L.; Li, W.; Soo, J.C. 
201010-Gb/s directly-modulated lasers driven by 3.5-GHz-bandwidth duobinary signalsAl-Qazwini, Z.; Kim, H. 
201010-Gb/s operation of RSOA using a delay interferometerKim, H. 
201410-Gb/s, 20-km VCSEL optical access link at 1.5 μm with 23-dB power budgetZhou, J.; Yu, C. ; Kim, H. 
201310-Gb/s/channel WDM PON using ultra-narrow spectrum-sliced incoherent light sourceKim, H. 
201210-Gbps single-feeder, full-duplex WDM-PON using directly modulated laser and RSOAAl-Qazwini, Z.; Kim, H. 
201110-Gbps upstream transmission for WDM-PON using RSOA and delay interferometerKim, H. 
2006100 nm Gate Length Pt-Germanosilicide Schottky S/D PMOSFET on SGOI substrate fabricated by novel condensation approachGao, F.; Balakumar, S.; Rui, L.; Lee, S.J. ; Tung, C.-H.; Du, A.; Sudhiranjan, T.; Hwang, W.S.; Balasubramanian, N.; Lo, P.; Dong-Zhi, C.; Kwong, D.-L.
2011100-km long distance FBG vibration sensor based on matching filter demodulationHu, J.; Chen, Z.; Teo, J.T.; Yu, C. 
2010100-km long distance fiber bragg grating sensor system based on erbium-doped fiber and raman amplificationHu, J.; Chen, Z.; Yang, X.; Ng, J.; Yu, C. 
2010107 Gb/s WDM DQPSK systems with 50 GHz channel spacing by low-crosstalk demodulatorsYu, Y.; Zhang, H. ; Yu, C. 
2013(110)-oriented germanium-tin (Ge0.97Sn0.03) P-channel MOSFETsZhan, C.; Wang, W.; Gong, X.; Guo, P.; Liu, B.; Yang, Y.; Han, G. ; Yeo, Y.-C. 
200712.9MHz Lame-mode differential SOI bulk resonatorsKhine, L.; Palaniapan, M. ; Wong, W.-K. 
2010130-GHz gain-enhanced SiGe low noise amplifierZhang, B.; Xiong, Y.-Z.; Wang, L.; Hu, S.; Lim, T.G.; Zhuang, Y.-Q.; Li, L.-W. ; Yuan, X.