Browsing by Author Zheng, J.Z.

Showing results 1 to 17 of 17
Issue DateTitleAuthor(s)
Mar-2003Applications of micro-Raman spectroscopy in salicide characterization for Si device fabricationZhao, F.F.; Chen, S.Y.; Shen, Z.X. ; Gao, X.S. ; Zheng, J.Z.; See, A.K.; Chan, L.H.
1999Characterization of a low-k organic spin-on-glass as an intermetal dielectricWang, C.Y.; Zheng, J.Z.; Shen, Z.X. ; Xu, Y.; Lim, S.L.; Liu, R. ; Huan, A.C.H. 
15-Oct-2004Characterization of HfO2/Si(0 0 1) interface with high-resolution rutherford backscattering spectroscopyNakajima, K.; Joumori, S.; Suzuki, M.; Kimura, K.; Osipowicz, T. ; Tok, K.L.; Zheng, J.Z.; See, A.; Zhang, B.C.
Dec-2002Dynamic NBTI of p-MOS transistors and its impact on MOSFET scalingChen, G. ; Li, M.F. ; Ang, C.H.; Zheng, J.Z.; Kwong, D.L.
2003Dynamic NBTI of PMOS transistors and its impact on device lifetimeChen, G. ; Chuah, K.Y.; Li, M.F. ; Chan, D.S.H. ; Ang, C.H.; Zheng, J.Z.; Jin, Y.; Kwong, D.L.
Aug-2003Effects of first rapid thermal annealing temperature on Co silicide formationPeng, H.J.; Shen, Z.X. ; Lim, E.H.; Lai, C.W.; Liu, R. ; Wee, A.T.S. ; Sameer, A.; Dai, J.Y.; Zhang, B.C.; Zheng, J.Z.
1-Nov-2001Elimination of O2 plasma damage of low-k methyl silsesquioxane film by As implantationWang, C.Y.; Zheng, J.Z.; Shen, Z.X. ; Lin, Y.; Wee, A.T.S. 
8-Jul-2002Energy gap and band alignment for (HfO2)x(Al 2O3)1-x on (100) SiYu, H.Y. ; Li, M.F. ; Cho, B.J. ; Yeo, C.C.; Joo, M.S. ; Kwong, D.-L.; Pan, J.S.; Ang, C.H.; Zheng, J.Z.; Ramanathan, S.
Jul-1998FT-IR study of the imidization process of photosensitive polyimide PMDA/ODALi, W.S. ; Shen, Z.X. ; Zheng, J.Z.; Tang, S.H. 
Oct-2001High-temperature properties of a low dielectric constant organic spin-on glass for multilevel interconnectsWang, C.Y.; Shen, Z.X. ; Zheng, J.Z.
Apr-2003Localized oxide degradation in ultrathin gate dielectric and its statistical analysisLoh, W.Y. ; Cho, B.J. ; Li, M.F. ; Chan, D.S.H. ; Ang, C.H.; Zheng, J.Z.; Kwong, D.L.
14-Jul-2003Strain profiling of HfO2/Si(001) interface with high-resolution Rutherford backscattering spectroscopyNakajima, K.; Joumori, S.; Suzuki, M.; Kimura, K.; Osipowicz, T. ; Tok, K.L.; Zheng, J.Z.; See, A.; Zhang, B.C.
May-2003The statistical distribution of percolation current for soft breakdown in ultrathin gate oxideLin, W.H.; Pey, K.L. ; Dong, Z.; Chooi, S.Y.M. ; Ang, C.H.; Zheng, J.Z.
May-2003The statistical distribution of percolation current for soft breakdown in ultrathin gate oxideLin, W.H.; Pey, K.L. ; Dong, Z.; Chooi, S.Y.M. ; Ang, C.H.; Zheng, J.Z.
Feb-2000Thermal cure study of a low-k methyl silsesquioxane for intermetal dielectric application by FT-IR spectroscopyWang, C.Y.; Shen, Z.X. ; Zheng, J.Z.
4-Nov-2002Thermal stability of (HfO2)x(Al2O 3)1-x on SiYu, H.Y. ; Wu, N.; Li, M.F. ; Zhu, C. ; Cho, B.J. ; Kwong, D.-L.; Tung, C.H.; Pan, J.S.; Chai, J.W.; Wang, W.D.; Chi, D.Z.; Ang, C.H.; Zheng, J.Z.; Ramanathan, S.
2002Thickness effect on nickel silicide formation and thermal stability for ultra shallow junction CMOSZhao, F.F.; Shen, Z.X. ; Zheng, J.Z.; Gao, W.Z.; Osipowicz, T. ; Pang, C.H.; Lee, P.S.; See, A.K.