Browsing by Author Zhao, R.

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Issue DateTitleAuthor(s)
Jan-1996A comparison of the selective etching characteristics of conventional and low-temperature-grown GaAs over AlAs by various etching solutionsZhao, R.; Lau, W.S. ; Chong, T.C. ; Li, M.F. 
Mar-1997Application of semiconducting low temperature grown GaAs to improve laser diodes grown on Si substratesPhua, C.C.; Chong, T.C. ; Lau, W.S. ; Zhao, R.; Lu, D. ; Goo, C.H.; Tan, L.S. 
2008Band alignment between amorphous Ge2 Sb2 Te5 and prevalent complementary-metal-oxide-semiconductor materialsFang, L.W.-W.; Pan, J.-S.; Zhao, R.; Shi, L.; Chong, T.-C.; Samudra, G. ; Yeo, Y.-C. 
28-Mar-2011Band offsets between SiO2 and phase change materials in the (GeTe) x (Sb2 Te3) 1-x pseudobinary systemFang, L.W.-W.; Zhao, R.; Zhang, Z.; Pan, J.; Shi, L.; Chong, T.-C.; Yeo, Y.-C. 
22-Jun-2012Breaking the speed limits of phase-change memoryLoke, D.; Lee, T.H.; Wang, W.J.; Shi, L.P.; Zhao, R.; Yeo, Y.C. ; Chong, T.C.; Elliott, S.R.
23-Sep-2013Compositionally matched nitrogen-doped Ge2Sb2Te 5/Ge2Sb2Te5 superlattice-like structures for phase change random access memoryChia Tan, C.; Shi, L.; Zhao, R.; Guo, Q.; Li, Y. ; Yang, Y.; Chong Chong, T.; Malen, J.A.; Ong, W.-L.; Schlesinger, T.E.; Bain, J.A.
31-Mar-2008Crystalline amorphous semiconductor superlatticeChong, T.C. ; Shi, L.P.; Wei, X.Q.; Zhao, R.; Lee, H.K.; Yang, P. ; Du, A.Y.
2009Dependence of energy band offsets at Ge2Sb2Te 5 / SiO2 interface on nitrogen concentrationFang, L.W.-W.; Zheng, Z.; Pan, J.-S.; Zhao, R.; Li, M.; Shi, L.; Chong, T.-C. ; Yeo, Y.-C. 
15-May-2010Dependence of the properties of phase change random access memory on nitrogen doping concentration in Ge2Sb2 Te5Fang, L.W.-W.; Zhao, R.; Li, M.; Lim, K.-G.; Shi, L.; Chong, T.-C. ; Yeo, Y.-C. 
23-Nov-2012Development and experimental test of support vector machines virtual screening method for searching Src inhibitors from large compound librariesHan, B.; Ma, X. ; Zhao, R.; Zhang, J.; Wei, X.; Liu, X.; Liu, X.; Zhang, C.; Tan, C.; Jiang, Y.; Chen, Y. 
1-Jul-2007DITOP: Drug-induced toxicity related protein databaseZhang, J.-X.; Huang, W.-J.; Zeng, J.-H.; Huang, W.-H.; Wang, Y.; Zhao, R.; Han, B.-C.; Liu, Q.-F.; Chen, Y.-Z. ; Ji, Z.-L.
2009Edge contact lateral phase change RAM with superlattice-like phase change mediumYang, H.X.; Shi, L.P.; Zhao, R.; Lee, H.K.; Li, J.M.; Lim, K.G.; Chong, T.C. 
1-Oct-2010Effective method for preparation of oxide-free Ge2Sb 2Te5 surface: An X-ray photoelectron spectroscopy studyZhang, Z.; Pan, J.; Foo, Y.L.; Fang, L.W.-W.; Yeo, Y.-C. ; Zhao, R.; Shi, L.; Chong, T.-C. 
2012Enabling universal memory by overcoming the contradictory speed and stability nature of phase-change materialsWang, W.; Loke, D.; Shi, L.; Zhao, R.; Yang, H.; Law, L.-T.; Ng, L.-T.; Lim, K.-G.; Yeo, Y.-C. ; Chong, T.-C.; Lacaita, A.L.
2012Engineering grains of Ge2Sb2Te5 for realizing fast-speed, low-power, and low-drift phase-change memories with further multilevel capabilitiesWang, W.J.; Loke, D.; Law, L.T.; Shi, L.P.; Zhao, R.; Li, M.H.; Chen, L.L.; Yang, H.X.; Yeo, Y.C. ; Adeyeye, A.O. ; Chong, T.C.; Lacaita, A.L.
2008Fast phase transitions induced by picosecond electrical pulses on phase change memory cellsWang, W.J.; Shi, L.P.; Zhao, R.; Lim, K.G.; Lee, H.K.; Chong, T.C. ; Wu, Y.H. 
1-Sep-2010Fermi-level pinning and charge neutrality level in nitrogen-doped Ge 2 Sb2 Te5: Characterization and application in phase change memory devicesFang, L.W.-W.; Zhang, Z.; Zhao, R.; Pan, J.; Li, M.; Shi, L.; Chong, T.-C. ; Yeo, Y.-C. 
2009Fermi-level pinning at the interface between metals and nitrogen-doped Ge2 Sb2 Te5 examined by x-ray photoelectron spectroscopyFang, L.W.-W.; Zhao, R.; Pan, J.; Zhang, Z.; Shi, L.; Chong, T.-C. ; Yeo, Y.-C. 
2009GeTe/Sb7Te3 superlatticelike structure for lateral phase change memoryYang, H.; Chong, C.T. ; Zhao, R.; Lee, H.K.; Li, J.; Lim, K.G.; Shi, L.
28-Jun-2012In situ determination of Zeeman content of collective atomic memoriesJenkins, S.D.; Dudin, Y.O.; Zhao, R.; Matsukevich, D.N. ; Kuzmich, A.; Kennedy, T.A.B.