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| Issue Date | Title | Author(s) |
| 2013 | (110)-oriented germanium-tin (Ge0.97Sn0.03) P-channel MOSFETs | Zhan, C.; Wang, W.; Gong, X.; Guo, P.; Liu, B.; Yang, Y.; Han, G. ; Yeo, Y.-C. |
| 2010 | A new self-aligned contact technology for III-V MOSFETs | Guo, H.; Zhang, X.; Chin, H.-C.; Gong, X.; Koh, S.-M.; Zhan, C.; Luo, G.-L.; Chang, C.-Y.; Lin, H.-Y.; Chien, C.-H.; Han, Z.-Y.; Huang, S.-C.; Cheng, C.-C.; Ko, C.-H.; Wann, C.H.; Yeo, Y.-C. |
| Apr-2013 | AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with a high breakdown voltage of 1400 v and a complementary metal-oxide- semiconductor compatible gold-free process | Liu, X.; Zhan, C.; Wai Chan, K.; Samuel Owen, M.H.; Liu, W.; Chi, D.Z.; Tan, L.S. ; Chen, K.J.; Yeo, Y.-C. |
| Jun-2012 | AlGaN/GaN-on-silicon metal-oxide-semiconductor high-electron-mobility transistor with breakdown voltage of 800v and on-state resistance of 3mΩ·cm 2 using a complementary metal-oxide-semiconductor compatible gold-free process | Liu, X.; Zhan, C.; Chan, K.W.; Liu, W.; Tan, L.S. ; Chen, K.J.; Yeo, Y.-C. |
| 2012 | AlGaN/GaN-on-silicon MOS-HEMTs with breakdown voltage of 800 V and on-state resistance of 3 mΩ.cm 2 using a CMOS-compatible gold-free process | Liu, X.; Zhan, C.; Chan, K.W.; Liu, W.; Tan, L.S. ; Teo, K.L. ; Chen, K.J.; Yeo, Y.-C. |
| 2011 | Bias temperature instability (BTI) characteristics of graphene Field-Effect Transistors | Liu, B.; Yang, M.; Zhan, C.; Yang, Y.; Yeo, Y.-C. |
| Feb-2012 | Device physics and design of a L-shaped germanium source tunneling transistor | Low, K.L.; Zhan, C.; Han, G. ; Yang, Y.; Goh, K.-H.; Guo, P.; Toh, E.-H.; Yeo, Y.-C. |
| 6-Dec-2011 | Direct binding of triglyceride to fat storage-inducing transmembrane proteins 1 and 2 is important for lipid droplet formation | Gross, D.A.; Zhan, C.; Silver, D.L. |
| May-2012 | Dopant segregation and nickel stanogermanide contact formation on p +Ge 0.947Sn 0.053 source/drain | Han, G. ; Su, S.; Zhou, Q. ; Guo, P.; Yang, Y.; Zhan, C.; Wang, L.; Wang, W.; Wang, Q.; Xue, C.; Cheng, B.; Yeo, Y.-C. |
| 2012 | Effect of fin doping concentration on the electrical characteristics of germanium-on-insulator multi-gate field-effect transistor | Liu, B.; Gong, X.; Zhan, C.; Han, G. ; Daval, N.; Veytizou, C.; Delprat, D.; Nguyen, B.-Y.; Yeo, Y.-C. |
| 2010 | Enhancement of TFET performance using Dopant Profile-Steepening Implant and source dopant concentration engineering at tunneling junction | Han, G. ; Yee, Y.S.; Guo, P.; Yang, Y.; Fan, L.; Zhan, C.; Yeo, Y.-C. |
| 2013 | Germanium multiple-gate field-effect transistor with in situ boron-doped raised source/drain | Liu, B.; Zhan, C.; Yang, Y.; Cheng, R. ; Guo, P.; Zhou, Q. ; Kong, E.Y.-J.; Daval, N.; Veytizou, C.; Delprat, D.; Nguyen, B.-Y.; Yeo, Y.-C. |
| 2013 | Germanium multiple-gate field-effect transistors formed on germanium-on-insulator substrate | Liu, B.; Gong, X.; Zhan, C.; Han, G. ; Chin, H.-C.; Ling, M.-L.; Li, J.; Liu, Y.; Hu, J.; Daval, N.; Veytizou, C.; Delprat, D.; Nguyen, B.-Y.; Yeo, Y.-C. |
| 2013 | Germanium-Tin (GeSn) N-channel MOSFETs with low temperature silicon surface passivation | Guo, P.; Zhan, C.; Yang, Y.; Gong, X.; Liu, B.; Cheng, R. ; Wang, W.; Pan, J.; Zhang, Z.; Tok, E.S. ; Han, G. ; Yeo, Y.-C. |
| 2011 | High-mobility germanium-tin (GeSn) P-channel MOSFETs featuring metallic source/drain and sub-370°C process modules | Han, G. ; Su, S.; Zhan, C.; Zhou, Q. ; Yang, Y.; Wang, L.; Guo, P.; Wei, W.; Wong, C.P.; Shen, Z.X.; Cheng, B.; Yeo, Y.-C. |
| 2012 | PBTI characteristics of N-channel tunneling field effect transistor with HfO 2 gate dielectric: New insights and physical model | Han, G. ; Yang, Y.; Guo, P.; Zhan, C.; Low, K.L.; Goh, K.H.; Liu, B.; Toh, E.-H.; Yeo, Y.-C. |
| 11-Apr-2011 | Silicon-based tunneling field-effect transistor with elevated germanium source formed on (110) silicon substrate | Han, G. ; Guo, P.; Yang, Y.; Zhan, C.; Zhou, Q. ; Yeo, Y.-C. |
| 1-Jun-2012 | Simulation of tunneling field-effect transistors with extended source structures | Yang, Y.; Guo, P.; Han, G. ; Lu Low, K.; Zhan, C.; Yeo, Y.-C. |
| Apr-2011 | Source engineering for tunnel field-effect transistor: Elevated source with vertical silicon-germanium/germanium heterostructure | Han, G. ; Guo, P.; Yang, Y.; Fan, L.; Yee, Y.S.; Zhan, C.; Yeo, Y.-C. |
