Browsing by Author Zang, H.

Showing results 1 to 15 of 15
Issue DateTitleAuthor(s)
2008Application of dopant segregation to metal-germanium-metal photodetectors and its dark current suppression mechanismZang, H.; Lee, S.J. ; Loh, W.Y.; Wang, J.; Yu, M.B.; Lo, G.Q.; Kwong, D.L.; Cho, B.J. 
Feb-2008Dark-current suppression in metal-germanium-metal photodetectors through dopant-segregation in NiGe - Schottky barrierZang, H.; Lee, S.J. ; Loh, W.Y.; Wang, J.; Chua, K.T.; Yu, M.B.; Cho, B.J. ; Lo, G.Q.; Kwong, D.-L.
9-Nov-2005Determination of Raman phonon strain shift coefficient of strained silicon and strained SiGeWong, L.H.; Wong, C.C.; Liu, J.P.; Sohn, D.K.; Chan, L.; Hsia, L.C.; Zang, H.; Ni, Z.H.; Shen, Z.X. 
2007Dopant segregated Pt and Ni germanosilicide Schottky S/D p-MOSFETs with strained Si-SiGe channelZang, H.; Chua, C.K.; Loh, W.Y.; Cho, B.J. 
Oct-2009Enhanced sensitivity of small-size (with 1-μm gate length) junction-field-effect-transistor-based germanium photodetector using two-step germanium epitaxy by ultrahigh vacuum chemical vapor depositionWang, J. ; Zang, H.; Yu, M.B.; Xiong, Y.Z.; Lo, G.Q.; Kwong, D.L.; Lee, S.J. 
May-2008Evanescent-coupled Ge p-i-n photodetectors on Si-waveguide with SEG-Ge and comparative study of lateral and vertical p-i-n configurationsWang, J. ; Loh, W.Y.; Chua, K.T.; Zang, H.; Xiong, Y.Z.; Loh, T.H.; Yu, M.B.; Lee, S.J. ; Lo, G.-Q.; Kwong, D.-L.
1-Dec-2008High-speed metal-germanium-metal configured PIN-like Ge-photodetector under photovoltaic mode and with dopant-segregated Schottky-contact engineeringZang, H.; Lee, S. ; Yu, M.; Loh, W.Y.; Wang, J. ; Lo, G.-Q.; Kwong, D.-L.
2007Improved current drivability and gate stack integrity using buried SiC layer for strained Si/SiGe channel devicesZang, H.; Loh, W.Y. ; Oh, H.J. ; Choi, K.J.; Nguyen, H.S.; Lo, G.Q.; Cho, B.J. 
2007Integration of tensile-strained Ge p-i-n photodetector on advanced CMOS platformWang, J. ; Loh, W.Y.; Zang, H.; Yu, M.B.; Chua, K.T.; Loh, T.H.; Ye, J.D.; Yang, R.; Wang, X.L.; Lee, S.J. ; Cho, B.J. ; Lo, G.Q.; Kwong, D.L.
Sep-2008Low-voltage high-speed (18 GHz/1 V) evanescent-coupled thin-film-Ge lateral PIN photodetectors integrated on Si waveguideWang, J. ; Loh, W.Y.; Chua, K.T.; Zang, H.; Xiong, Y.Z.; Tan, S.M.F.; Yu, M.B.; Lee, S.J. ; Lo, G.Q.; Kwong, D.L.
2011Optimal ring ratio of 16-star quadrature amplitude modulation in coherent optical communication systemsZang, H.; Kam, P.-Y. ; Yu, C. 
2010Optoelectronic monolithic integration of waveguided Metal-Germanium-Metal Photodetector and Ge CMOSFETs on SOI waferZang, H.; Wang, J. ; Lo, G.Q.; Lee, S.J. 
Dec-2007Strained Si/SiGe channel with buried Si0.99C0.01 for improved drivability, gate stack integrity and noise performanceLoh, W.-Y.; Zang, H.; Oh, H.-J. ; Choi, K.-J.; Nguyen, H.S.; Lo, G.-Q.; Cho, B.J. 
Dec-2007Tensile-strained germanium CMOS integration on siliconZang, H.; Loh, W.Y. ; Ye, J.D.; Lo, G.Q.; Cho, B.J. 
1-Jan-2006ZnS/Si composite nano-structured thin films and their photoluminescenceZhu, Y.; Shen, Z.X.; Lim, Y.V.; Zang, H.; Liu, Y. ; Wee, A.T.S.