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| Issue Date | Title | Author(s) |
| 2008 | Application of dopant segregation to metal-germanium-metal photodetectors and its dark current suppression mechanism | Zang, H.; Lee, S.J. ; Loh, W.Y.; Wang, J.; Yu, M.B.; Lo, G.Q.; Kwong, D.L.; Cho, B.J. |
| Feb-2008 | Dark-current suppression in metal-germanium-metal photodetectors through dopant-segregation in NiGe - Schottky barrier | Zang, H.; Lee, S.J. ; Loh, W.Y.; Wang, J.; Chua, K.T.; Yu, M.B.; Cho, B.J. ; Lo, G.Q.; Kwong, D.-L. |
| 9-Nov-2005 | Determination of Raman phonon strain shift coefficient of strained silicon and strained SiGe | Wong, L.H.; Wong, C.C.; Liu, J.P.; Sohn, D.K.; Chan, L.; Hsia, L.C.; Zang, H.; Ni, Z.H.; Shen, Z.X. |
| 2007 | Dopant segregated Pt and Ni germanosilicide Schottky S/D p-MOSFETs with strained Si-SiGe channel | Zang, H.; Chua, C.K.; Loh, W.Y.; Cho, B.J. |
| Oct-2009 | Enhanced sensitivity of small-size (with 1-μm gate length) junction-field-effect-transistor-based germanium photodetector using two-step germanium epitaxy by ultrahigh vacuum chemical vapor deposition | Wang, J. ; Zang, H.; Yu, M.B.; Xiong, Y.Z.; Lo, G.Q.; Kwong, D.L.; Lee, S.J. |
| May-2008 | Evanescent-coupled Ge p-i-n photodetectors on Si-waveguide with SEG-Ge and comparative study of lateral and vertical p-i-n configurations | Wang, J. ; Loh, W.Y.; Chua, K.T.; Zang, H.; Xiong, Y.Z.; Loh, T.H.; Yu, M.B.; Lee, S.J. ; Lo, G.-Q.; Kwong, D.-L. |
| 1-Dec-2008 | High-speed metal-germanium-metal configured PIN-like Ge-photodetector under photovoltaic mode and with dopant-segregated Schottky-contact engineering | Zang, H.; Lee, S. ; Yu, M.; Loh, W.Y.; Wang, J. ; Lo, G.-Q.; Kwong, D.-L. |
| 2007 | Improved current drivability and gate stack integrity using buried SiC layer for strained Si/SiGe channel devices | Zang, H.; Loh, W.Y. ; Oh, H.J. ; Choi, K.J.; Nguyen, H.S.; Lo, G.Q.; Cho, B.J. |
| 2007 | Integration of tensile-strained Ge p-i-n photodetector on advanced CMOS platform | Wang, J. ; Loh, W.Y.; Zang, H.; Yu, M.B.; Chua, K.T.; Loh, T.H.; Ye, J.D.; Yang, R.; Wang, X.L.; Lee, S.J. ; Cho, B.J. ; Lo, G.Q.; Kwong, D.L. |
| Sep-2008 | Low-voltage high-speed (18 GHz/1 V) evanescent-coupled thin-film-Ge lateral PIN photodetectors integrated on Si waveguide | Wang, J. ; Loh, W.Y.; Chua, K.T.; Zang, H.; Xiong, Y.Z.; Tan, S.M.F.; Yu, M.B.; Lee, S.J. ; Lo, G.Q.; Kwong, D.L. |
| 2011 | Optimal ring ratio of 16-star quadrature amplitude modulation in coherent optical communication systems | Zang, H.; Kam, P.-Y. ; Yu, C. |
| 2010 | Optoelectronic monolithic integration of waveguided Metal-Germanium-Metal Photodetector and Ge CMOSFETs on SOI wafer | Zang, H.; Wang, J. ; Lo, G.Q.; Lee, S.J. |
| Dec-2007 | Strained Si/SiGe channel with buried Si0.99C0.01 for improved drivability, gate stack integrity and noise performance | Loh, W.-Y.; Zang, H.; Oh, H.-J. ; Choi, K.-J.; Nguyen, H.S.; Lo, G.-Q.; Cho, B.J. |
| Dec-2007 | Tensile-strained germanium CMOS integration on silicon | Zang, H.; Loh, W.Y. ; Ye, J.D.; Lo, G.Q.; Cho, B.J. |
| 1-Jan-2006 | ZnS/Si composite nano-structured thin films and their photoluminescence | Zhu, Y.; Shen, Z.X.; Lim, Y.V.; Zang, H.; Liu, Y. ; Wee, A.T.S. |
