Browsing by Author Yu, H.Y.

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Issue DateTitleAuthor(s)
Mar-2011A high-yield HfOx-based unipolar resistive ram employing Ni electrode compatible with Si-diode selector for crossbar integrationTran, X.A.; Yu, H.Y.; Yeo, Y.C. ; Wu, L.; Liu, W.J.; Wang, Z.R.; Fang, Z.; Pey, K.L.; Sun, X.W.; Du, A.Y.; Nguyen, B.Y.; Li, M.F.
2007A novel high-k gate dielectric HfLaO for next generation CMOS technologyLi, M.-F. ; Wang, X.P.; Yu, H.Y.; Zhu, C.X. ; Chin, A.; Du, A.Y.; Shao, J.; Lu, W.; Shen, X.C.; Liu, P.; Hung, S.; Lo, P.; Kwong, D.L.
2012A self-rectifying alo y bipolar RRAM with sub-50μA set/reset current for cross-bar architectureTran, X.A.; Zhu, W.; Liu, W.J.; Yeo, Y.C. ; Nguyen, B.Y.; Yu, H.Y.
Apr-2012A self-rectifying HfO x-based unipolar RRAM with Nisi electrodeTran, X.A.; Zhu, W.G.; Gao, B.; Kang, J.F.; Liu, W.J.; Fang, Z.; Wang, Z.R.; Yeo, Y.C. ; Nguyen, B.Y.; Li, M.F.; Yu, H.Y.
2007Advanced Ni-based FUlly SIlicidation (FUSI) technology for sub-45nm CMOS devicesYu, H.Y.; Li, M.F. ; Lauwers, A.; Kittl, J.A.; Singanamalla, R.; Veloso, A.; Hoffmann, T.; De Meyer, K.; Jurczak, M.; Absil, P.; Biesemans, S.
Jun-2011An indium-free transparent resistive switching random access memoryZheng, K.; Sun, X.W.; Zhao, J.L.; Wang, Y.; Yu, H.Y.; Demir, H.V.; Teo, K.L. 
2006Demonstration of a new approach towards 0.25V Low-Vt CMOS using Ni-based FUSIYu, H.Y.; Kittl, J.A.; Lauwers, A.; Singanamalla, R.; Demeurisse, C.; Kubicek, S.; Augendre, E.; Veloso, A.; Brus, S.; Vrancken, C.; Hoffmann, T.; Mertens, S.; Onsia, B.; Verbeeck, R.; Demand, M.; Rothchild, A.; Froment, B.; Van Dal, M.; De Meyer, K.; Li, M.F. ; Chen, J.D. ; Jurczak, M.; Absil, P.P.; Biesemans, S.
2006Dual metal gates with band-edge work functions on novel HfLaO high- κ gate dielectricWang, X.P.; Shen, C.; Li, M.-F. ; Yu, H.Y.; Sun, Y. ; Feng, Y.P. ; Lim, A.; Sik, H.W.; Chin, A.; Yeo, Y.C. ; Lo, P.; Kwong, D.L.
2007Experimental and simulation study of the Schottky barrier lowering by substrate doping variation for PtSi source/drain SBFETsLousberg, G.P.; Yu, H.Y.; Froment, B.; Li, M.F. ; Augendre, E.; De Keersgieter, A.; Demeurisse, C.; Brus, S.; Degroote, B.; Hoffmann, T.; Lauwers, A.; DePotter, M.; Kubicek, S.; Anil, K.; Absil, P.; Jurczak, M.; Biesemans, S.
2011High performance unipolar AlOy/HfOx/Ni based RRAM compatible with Si diodes for 3D applicationTran, X.A.; Gao, B.; Kang, J.F.; Wu, L.; Wang, Z.R.; Fang, Z.; Pey, K.L.; Yeo, Y.C. ; Du, A.Y.; Nguyen, B.Y.; Li, M.F.; Yu, H.Y.
Sep-2005Mechanism of positive-bias temperature instability in sub-1-nm TaN/HfN/HfO2 gate stack with low preexisting trapsSa, N.; Kang, J.F.; Yang, H.; Liu, X.Y.; He, Y.D.; Han, R.Q.; Ren, C.; Yu, H.Y.; Chan, D.S.H. ; Kwong, D.-L.
2005Modulation of the Ni FUSI workfunction by Yb doping: From midgap to n-type band-edgeYu, H.Y.; Chen, J.D. ; Li, M.F. ; Lee, S.J. ; Kwong, D.L.; Van Dal, M.; Kittl, J.A.; Lauwers, A.; Augendre, E.; Kubicek, S.; Zhao, C.; Bender, H.; Brijs, B.; Geenen, L.; Benedetti, A.; Absil, P.; Jurczak, M.; Biesemans, S.
Sep-2011Ni electrode unipolar resistive RAM performance enhancement by AlO y incorporation into HfOx switching dielectricsTran, X.A.; Yu, H.Y.; Gao, B.; Kang, J.F.; Sun, X.W.; Yeo, Y.-C. ; Nguyen, B.Y.; Li, M.F.
2007Scalability and reliability characteristics of cvd hf o2 gate dielectrics with HfN electrodes for advanced CMOS applicationsKang, J.F.; Yu, H.Y.; Ren, C.; Sa, N.; Yang, H.; Li, M.-F. ; Chan, D.S.H. ; Liu, X.Y.; Han, R.Q.; Kwong, D.-L.
2005Scalability and reliability of TaN/HfN/HfO2 gate stacks fabricated by a high temperature processKang, J.F.; Yu, H.Y.; Ren, C.; Yang, H.; Sa, N.; Liu, X.Y.; Han, R.Q.; Li, M.-F. ; Chan, D.S.H. ; Kwong, D.-L.
2004Scaling properties of GOI MOSFETs in naon scale by full band Monte Carlo simulationLiu, X.Y.; Du, G.; Xia, Z.L.; Kang, J.F.; Wang, Y.; Han, R.Q.; Yu, H.Y.; Li, M.-F. ; Kwong, D.L.
2011Self-rectifying and forming-free unipolar HfO x based-high performance RRAM built by fab-avaialbe materialsTran, X.A.; Gao, B.; Kang, J.F.; Wu, X.; Wu, L.; Fang, Z.; Wang, Z.R.; Pey, K.L.; Yeo, Y.C. ; Du, A.Y.; Liu, M.; Nguyen, B.Y.; Li, M.F.; Yu, H.Y.
2013Self-selection unipolar HfOx-Based RRAMTran, X.A.; Zhu, W.; Liu, W.J.; Yeo, Y.C. ; Nguyen, B.Y.; Yu, H.Y.
Dec-2011Some issues in advanced CMOS gate stack performance and reliabilityLi, M.-F. ; Wang, X.P.; Shen, C.; Yang, J.J.; Chen, J.D. ; Yu, H.Y.; Zhu, C. ; Huang, D.
Apr-2013Switching model of taox-based nonpolar resistive random access memoryTong, X.; Wu, W.; Liu, Z.; Tran, X.A.; Yu, H.Y.; Yeo, Y.-C.