Browsing by Author Yeow, Y.T.

Showing results 1 to 14 of 14
Issue DateTitleAuthor(s)
Mar-2006Accurate modeling of the effects of fringing area interface traps on scanning capacitance microscopy measurementHong, Y.D.; Yeow, Y.T.; Chim, W.K. ; Yan, J.; Wong, K.M. 
Nov-1992Characterization of charge trapping in submicrometer NMOSFET's by gate capacitance measurementsLing, C.H. ; Yeow, Y.T.; Ah, L.K.
24-Jun-2002Dopant extraction from scanning capacitance microscopy measurements of p-n junctions using combined inverse modeling and forward simulationChim, W.K. ; Wong, K.M. ; Teo, Y.L.; Lei, Y. ; Yeow, Y.T.
2004Dopant profile extraction by inverse modeling of scanning capacitance microscopy using peak dC/dVHong, Y.D.; Yan, J.; Wong, K.M. ; Yeow, Y.T.; Chim, W.K. 
Sep-2004Influence of interface traps and surface mobility degradation on scanning capacitance microscopy measurementHong, Y.D.; Yeow, Y.T.; Chim, W.-K. ; Wong, K.-M. ; Kopanski, J.J.
1-Jan-1993Logarithmic time dependence of pMOSFET degradation observed from gate capacitanceLing, C.H. ; Yeow, Y.T.; Ah, L.K.; Yung, W.H.; Choi, W.K. 
1-Jan-1993Logarithmic time dependence of pMOSFET degradation observed from gate capacitanceLing, C.H. ; Yeow, Y.T.; Ah, L.K.; Yung, W.H.; Choi, W.K. 
2000Modelling of the "Gated-diode" configuration in bulk MOSFET'sYip, A.; Yeow, Y.T.; Samudra, G.S. ; Ling, C.H. 
2000Modelling of the "Gated-diode" configuration in bulk MOSFET'sYip, A.; Yeow, Y.T.; Samudra, G.S. ; Ling, C.H. 
Oct-2003Monitoring Oxide Quality Using the Spread of the dC/dV Peak in Scanning Capacitance Microscopy MeasurementsChim, W.K. ; Wong, K.M. ; Yeow, Y.T.; Hong, Y.D.; Lei, Y. ; Teo, L.W.; Choi, W.K. 
Jul-1991Observation of MOSFET degradation due to electrical stressing through gate-to-source and gate-to-drain capacitance measurementYeow, Y.T.; Ling, C.H. ; Ah, L.K.
Jul-1991Observation of MOSFET degradation due to electrical stressing through gate-to-source and gate-to-drain capacitance measurementYeow, Y.T.; Ling, C.H. ; Ah, L.K.
Jun-1995Study of hot-carrier degradation in submicrometer LDD NMOSFET's from 1 f noise and charge pumping current measurements at different temperature annealsAng, D.S. ; Ling, C.H. ; Yeow, Y.T.
1999Teaching semiconductor device physics with two-dimensional numerical solverYeow, Y.T.; Ling, C.H.