Browsing by Author Xue, C.

Showing results 1 to 13 of 13
Issue DateTitleAuthor(s)
May-2012Dopant segregation and nickel stanogermanide contact formation on p +Ge 0.947Sn 0.053 source/drainHan, G. ; Su, S.; Zhou, Q. ; Guo, P.; Yang, Y.; Zhan, C.; Wang, L.; Wang, W.; Wang, Q.; Xue, C.; Cheng, B.; Yeo, Y.-C. 
2013Germanium-tin (GeSn) p-channel MOSFETs fabricated on (100) and (111) surface orientations with Sub-400 °cSi2H6 passivationGong, X.; Han, G. ; Bai, F.; Su, S.; Guo, P.; Yang, Y.; Cheng, R. ; Zhang, D.; Zhang, G.; Xue, C.; Cheng, B.; Pan, J. ; Zhang, Z.; Tok, E.S. ; Antoniadis, D.; Yeo, Y.-C. 
2012Germanium-tin + junction formed using phosphorus ion implant and 400 °c rapid thermal annealWang, L.; Su, S.; Wang, W.; Yang, Y.; Tong, Y.; Liu, B.; Guo, P.; Gong, X.; Zhang, G.; Xue, C.; Cheng, B.; Han, G. ; Yeo, Y.-C. 
2012High hole mobility in strained germanium-tin (GeSn) channel pMOSFET fabricated on (111) substrateHan, G. ; Su, S.; Yang, Y.; Guo, P.; Gong, X.; Wang, L.; Wang, W.; Guo, C.; Zhang, G.; Xue, C.; Cheng, B.; Yeo, Y.C. 
2012Metal stanogermanide contacts with enhanced thermal stability for high mobility germanium-tin field-effect transistorWang, L.; Han, G. ; Su, S.; Zhou, Q. ; Yang, Y.; Guo, P.; Wang, W.; Tong, Y.; Lim, P.S.Y.; Xue, C.; Wang, Q.; Cheng, B.; Yeo, Y.-C. 
2012(NH4)2S passivation for high mobility germanium-Tin (GeSn) p-MOSFETsWang, L.; Su, S.; Wang, W.; Gong, X.; Yang, Y.; Guo, P.; Zhang, G.; Xue, C.; Cheng, B.; Han, G. ; Yeo, Y.-C. 
2012Strained germanium-tin (GeSn) N-channel MOSFETs featuring low temperature N +/P junction formation and GeSnO 2 interfacial layerHan, G. ; Su, S.; Wang, L.; Wang, W.; Gong, X.; Yang, Y.; Ivana; Guo, P.; Guo, C.; Zhang, G.; Pan, J.; Zhang, Z.; Xue, C.; Cheng, B.; Yeo, Y.-C. 
2013Strained germanium-tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivationWang, L.; Su, S.; Wang, W.; Gong, X.; Yang, Y.; Guo, P.; Zhang, G.; Xue, C.; Cheng, B.; Han, G. ; Yeo, Y.-C. 
2013Sub-400 °C Si2H6 passivation, HfO2 gate dielectric, and single TaN metal gate: A common gate stack technology for In0.7Ga0.3As and Ge1-xSnx CMOSGong, X.; Han, G. ; Liu, B.; Wang, L.; Wang, W.; Yang, Y.; Kong, E.Y.-J.; Su, S.; Xue, C.; Cheng, B.; Yeo, Y.-C. 
2012Thermally stable multi-phase nickel-platinum stanogermanide contacts for germanium-tin channel MOSFETsWang, L.; Han, G. ; Su, S.; Zhou, Q. ; Yang, Y.; Guo, P.; Wang, W.; Tong, Y.; Lim, P.S.Y.; Liu, B.; Kong, E.Y.-J.; Xue, C.; Wang, Q.; Cheng, B.; Yeo, Y.-C. 
2012Tin-incorporated source/drain and channel materials for field-effect transistorsYeo, Y.-C. ; Han, G. ; Gong, X.; Wang, L.; Wang, W.; Yang, Y.; Guo, P.; Liu, B.; Su, S.; Zhang, G.; Xue, C.; Cheng, B.
2012Towards direct band-to-band tunneling in P-channel tunneling field effect transistor (TFET): Technology enablement by Germanium-tin (GeSn)Yang, Y.; Su, S.; Guo, P.; Wang, W.; Gong, X.; Wang, L.; Low, K.L.; Zhang, G.; Xue, C.; Cheng, B.; Han, G. ; Yeo, Y.-C. 
2013Uniaxially strained germanium-tin (GeSn) gate-all-around nanowire PFETs enabled by a novel top-down nanowire formation technologyGong, X.; Han, G. ; Su, S.; Cheng, R. ; Guo, P.; Bai, F.; Yang, Y.; Zhou, Q. ; Liu, B.; Goh, K.H.; Zhang, G.; Xue, C.; Cheng, B.; Yeo, Y.-C.