Browsing by Author Xiong, Y.Z.

Showing results 1 to 13 of 13
Issue DateTitleAuthor(s)
2013A 19.2 > 45 dB gain and high-selectivity 94 GHz LNA in 0.13 μm SiGe BiCMOSBi, X.; Guo, Y. ; Xiong, Y.Z.; Arasu, M.A.; Je, M.
2013A 19.2 > 45 dB gain and high-selectivity 94 GHz LNA in 0.13 μm SiGe BiCMOSBi, X.; Guo, Y. ; Xiong, Y.Z.; Arasu, M.A.; Je, M.
Nov-2011A 60-GHz 1-V supply band-tunable power amplifier in 65-nm CMOSBi, X.; Guo, Y. ; Brinkhoff, J.; Jia, L.; Wang, L.; Xiong, Y.Z.; Leong, M.S. ; Lin, F.
2014Design of a high-performance Millimeter-wave amplifier using specific modelingBi, X.J.; Guo, Y.X. ; Arasu, M.A.; Zhang, M.S. ; Xiong, Y.Z.; Je, M.K.
Oct-2009Enhanced sensitivity of small-size (with 1-μm gate length) junction-field-effect-transistor-based germanium photodetector using two-step germanium epitaxy by ultrahigh vacuum chemical vapor depositionWang, J. ; Zang, H.; Yu, M.B.; Xiong, Y.Z.; Lo, G.Q.; Kwong, D.L.; Lee, S.J. 
May-2008Evanescent-coupled Ge p-i-n photodetectors on Si-waveguide with SEG-Ge and comparative study of lateral and vertical p-i-n configurationsWang, J. ; Loh, W.Y.; Chua, K.T.; Zang, H.; Xiong, Y.Z.; Loh, T.H.; Yu, M.B.; Lee, S.J. ; Lo, G.-Q.; Kwong, D.-L.
Jul-2007Flicker noise and its degradation characteristics under electrical stress in MOSFETs with thin strained-Si/SiGe dual-quantum wellJiang, Y.; Loh, W.Y.; Chan, D.S.H. ; Xiong, Y.Z.; Ren, C.; Lim, Y.F.; Lo, G.Q.; Kwong, D.-L.
Nov-2007Impact of local strain from selective epitaxial germanium with thin Si/SiGe buffer on high-performance p-i-n photodetectors with a low thermal budgetLoh, W.Y.; Wang, J. ; Ye, J.D.; Yang, R.; Nguyen, H.S.; Chua, K.T.; Song, J.F.; Loh, T.H.; Xiong, Y.Z.; Lee, S.J. ; Yu, M.B.; Lo, G.Q.; Kwong, D.L.
Nov-2005Integrated high-κ (κ ∼ 19) MIM capacitor with Cu/ low-κ interconnects for RF applicationYu, M.B.; Xiong, Y.Z.; Kim, S.-J. ; Balakumar, S.; Zhu, C. ; Li, M.-F. ; Cho, B.-J. ; Lo, G.Q.; Balasubramanian, N.; Kwong, D.-L.
Sep-2008Low-voltage high-speed (18 GHz/1 V) evanescent-coupled thin-film-Ge lateral PIN photodetectors integrated on Si waveguideWang, J. ; Loh, W.Y.; Chua, K.T.; Zang, H.; Xiong, Y.Z.; Tan, S.M.F.; Yu, M.B.; Lee, S.J. ; Lo, G.Q.; Kwong, D.L.
2011Microwave, millimeter wave, and Terahertz technologies in SingaporeChen, Z.N.; Chia, M.Y.W.; Gong, Y.; Qing, X.; Ong, M.L.C.; Chen, X. ; Yeo, S.P. ; Lim, T.G.; Lo, P.G.Q.; Madihian, M.; Xiong, Y.Z.; Lu, Y.; Ma, K.; Yeo, K.S.; Zheng, Y.; Sze, T.L.; Teng, J.H.
Sep-2006Random telegraph signal noise in gate-all-around Si-FinFET with ultranarrow bodyLim, Y.F.; Xiong, Y.Z.; Singh, N.; Yang, R.; Jiang, Y.; Chan, D.S.H. ; Loh, W.Y.; Bera, L.K.; Lo, G.Q.; Balasubramanian, N.; Kwong, D.-L.
Oct-2004Temperature effects on the performance of on-chip spiral inductors used in RF(MM)ICsShi, J.; Kang, K.; Yeo, T.-S.; Wu, B. ; Liao, H.; Xiong, Y.Z.; Rustagi, S.C.