Browsing by Author Wu, N.

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Issue DateTitleAuthor(s)
2004A novel surface passivation process for HfO 2 Ge MOSFETsWu, N.; Zhang, Q.; Zhu, C. ; Chan, D.S.H. ; Li, M.F. ; Balasubramanian, N.; Du, A.Y.; Chin, A.; Sin, J.K.O.; Kwong, D.-L.
2006A simulation study of FIBL in Ge MOSFETs with high-k gate dielectricsTan, Y.P.; James, M.-K.L.; Zhang, Q.; Wu, N.; Zhu, C. 
Sep-2004A TaN-HfO2-Ge pMOSFET with novel SiH4 surface passivationWu, N.; Zhang, Q.; Zhu, C. ; Chan, D.S.H. ; Du, A.; Balasubramanian, N.; Li, M.F. ; Chin, A.; Sin, J.K.O.; Kwong, D.-L.
Jun-2010Acoustic wave in piezoelectric coupled plates with open circuitWang, Q.; Wu, N.; Quek, S.T. 
1-Nov-2004Alternative surface passivation on germanium for metal-oxide-semiconductor applications with high-k gate dielectricWu, N.; Zhang, Q.; Zhu, C. ; Chan, D.S.H. ; Li, M.F. ; Balasubramanian, N.; Chin, A.; Kwong, D.-L.
2008Asymmetric energy distribution of interface traps in germanium MOSFETs with HfO2 gate dielectricXie, R.; Wu, N.; Shen, C.; Zhu, C. 
2013Biped walking over rough terrain by adaptive ground reference mapWu, N.; Chew, C.-M. ; Poo, A.N.
2005BTI and charge trapping in germanium p- And n-MOSFETs with CVD HfO 2 gate dielectricWu, N.; Zhang, Q.; Zhu, C. ; Shen, C.; Li, M.F. ; Chan, D.S.H. ; Balasubramanian, N.
Apr-2007Characteristics of self-aligned gate-first Ge p- and n-channel MOSFETs using CVD HfO2 gate dielectric and Si surface passivationWu, N.; Zhang, Q.; Balasubramanian, N.; Chan, D.S.H. ; Zhu, C. 
2013Compliant foot system design for bipedal robot walking over uneven terrainWu, N.; Tan, B.-H.; Chew, C.-M. ; Poo, A.-N. 
1-Mar-2003Dependence of chemical composition ratio on electrical properties of HfO2-Al2O3 gate dielectricJoo, M.S. ; Cho, B.J. ; Yeo, C.C.; Wu, N.; Yu, H. ; Zhu, C. ; Li, M.F. ; Kwong, D.-L.; Balasubramanian, N.
Sep-2006Drive-current enhancement in Ge n-Channel MOSFET using laser annealing for source/drain activationZhang, Q.; Huang, J.; Wu, N.; Chen, G. ; Hong, M. ; Bera, L.K.; Zhu, C. 
10-May-2004Effect of surface NH 3 anneal on the physical and electrical properties of HfO 2 films on Ge substrateWu, N.; Zhang, Q.; Zhu, C. ; Yeo, C.C.; Whang, S.J. ; Chan, D.S.H. ; Li, M.F. ; Cho, B.J. ; Chin, A.; Kwong, D.-L.; Du, A.Y.; Tung, C.H.; Balasubramanian, N.
2008Energy distribution of interface traps in germanium metal-oxide- semiconductor field effect transistors with HfO2 gate dielectric and its impact on mobilityXie, R.; Wu, N.; Shen, C.; Zhu, C. 
Jul-2003Formation of polycrystalline silicon germanium/HfO2 gate stack structure using inductively coupled plasma etchingChen, J. ; Tan, K.M.; Wu, N.; Yoo, W.J. ; Chan, D.S.H. 
12-Apr-2010Free vibration analysis of piezoelectric coupled circular plate with open circuitWu, N.; Wang, Q.; Quek, S.T. 
Jun-2006Gate-first germanium nMOSFET with CVD HfO2 gate dielectric and silicon surface passivationWu, N.; Zhang, Q.; Chan, D.S.H. ; Balasubramanian, N.; Zhu, C. 
2006Germanium incorporation in Hf O2 dielectric on germanium substrateZhang, Q.; Wu, N.; Lai, D.M.Y.; Nikolai, Y.; Bera, L.K.; Zhu, C. 
24-Oct-2005Germanium n+/p junction formation by laser thermal processHuang, J.; Wu, N.; Zhang, Q.; Zhu, C. ; Tay, A.A.O. ; Chen, G. ; Hong, M. 
2004Germanium p- & n-MOSFETs fabricated with novel surface passivation (plasma-PH 3 and thin AlN) and TaN/HfO 2 gate stackWhang, S.J. ; Lee, S.J. ; Gao, F.; Wu, N.; Zhu, C.X. ; Pan, J.S.; Tang, L.J.; Kwong, D.L.