Browsing by Author Wong, H.-S.

Showing results 1 to 20 of 20
Issue DateTitleAuthor(s)
2008A new salicidation process with solid Antimony (Sb) segregation (SSbS) for achieving sub-0.1 eV effective schottky barrier height and parasitic series resistance reduction in N-channel transistorsWong, H.-S.; Koh, A.T.-Y.; Chin, H.-C.; Lee, R.T.-P. ; Chan, L.; Samudra, G. ; Yeo, Y.-C. 
2008A new source/drain germanium-enrichment process comprising Ge deposition and laser-induced local melting and recrystallization for P-FET performance enhancementLiu, F.; Wong, H.-S.; Ang, K.-W.; Zhu, M. ; Wang, X.; Lai, D.M.-Y.; Lim, P.-C.; Tan, B.L.H.; Tripathy, S.; Oh, S.-A.; Samudra, G.S. ; Balasubramanian, N.; Yeo, Y.-C. 
2009Contact resistance reduction technology using selenium egregation for N-MOSFETs with silicon-carbon source/drainWong, H.-S.; Ang, K.-W.; Chan, L.; Samudra, G. ; Yeo, Y.-C. 
Jan-2013Conversion to enteric-coated mycophenolate sodium from mycophenolate mofetil in stable renal transplant patients: Results of an Asia-Pacific studyLee, P.-H.; Vathsala, A. ; Han, D.J.; Chan, T.-M.; Wong, H.-S.; Woodcock, C.; Kurstjens, N.
Dec-2007Effective Schottky Barrier height reduction using sulfur or selenium at the NiSi/n-Si (100) interface for low resistance contactsWong, H.-S.; Chan, L.; Samudra, G. ; Yeo, Y.-C. 
2007Enhanced performance in strained n-FET with double-recessed Si:C source/drain and lattice-mismatched SiGe strain-transfer structure (STS)Ang, K.-W.; Wong, H.-S.; Balasubramanian, N.; Samudra, G. ; Yeo, Y.-C. 
2009Gate-all-around quantum-wire field-effect transistor with dopant segregation at metal-semiconductor-metal heterostuctureWong, H.-S.; Tan, L.-H.; Chan, L.; Lo, G.-Q.; Samudra, G. ; Yeo, Y.-C. 
Aug-2008Laser annealing of amorphous germanium on silicon-germanium source/drain for strain and performance enhancement in pMOSFETsLiu, F.; Wong, H.-S.; Ang, K.-W.; Zhu, M. ; Wang, X.; Lai, D.M.-Y.; Lim, P.-C.; Yeo, Y.-C. 
2008Low Schottky barrier height for silicides on n -type Si (100) by interfacial selenium segregation during silicidationWong, H.-S.; Chan, L.; Samudra, G. ; Yeo, Y.-C. 
Aug-2008Novel nickel silicide contact technology using selenium segregation for SOI N-FETs with silicon-carbon source/drain stressorsWong, H.-S.; Liu, F.-Y.; Ang, K.-W.; Samudra, G.; Yeo, Y.-C. 
2006Novel nickel-alloy suicides for source/drain contact resistance reduction in N-channel multiple-gate transistors with sub-35nm gate lengthLee, R.T.P. ; Liow, T.-Y.; Tan, K.-M.; Lim, A.E.-J.; Wong, H.-S.; Lim, P.-C.; Lai, D.M.Y.; Lo, G.-Q.; Tung, C.-H.; Samudra, G. ; Chi, D.-Z.; Yeo, Y.-C. 
2-Apr-2014Predicting survival of de novo metastatic breast cancer in Asian women: Systematic review and validation studyMiao, H. ; Hartman, M. ; Bhoo-Pathy, N.; Lee, S.-C. ; Taib, N.A.; Tan, E.-Y.; Chan, P.; Moons, K.G.M.; Wong, H.-S.; Goh, J.; Rahim, S.M.; Yip, C.-H.; Verkooijen, H.M. 
2008Selenium Co-implantation and segregation as a new contact technology for nanoscale SOI N-FETs featuring NiSi:C formed on Silicon-carbon (Si:C) source/drain stressorsWong, H.-S.; Liu, F.-Y.; Ang, K.-W.; Koh, S.-M.; Koh, A.T.-Y.; Liow, T.-Y.; Lee, R.T.-P. ; Lim, A.E.-J.; Fang, W.-W.; Zhu, M. ; Chan, L.; Balasubramaniam, N.; Samudra, G. ; Yeo, Y.-C. 
Oct-2009Selenium segregation for lowering the contact resistance in ultrathin-body MOSFETs with fully metallized source/drainWong, H.-S.; Chan, L.; Samudra, G. ; Yeo, Y.-C. 
May-2008Silicon-carbon stressors with high substitutional carbon concentration and in situ doping formed in source/drain extensions of n-channel transistorsWong, H.-S.; Ang, K.-W.; Chan, L.; Hoe, K.-M.; Tung, C.-H.; Balasubramanian, N.; Weeks, D.; Bauer, M.; Spear, J.; Thomas, S.G.; Samudra, G. ; Yeo, Y.-C. 
Jul-2008Source and drain series resistance reduction for N-channel transistors using solid antimony (Sb) segregation (SSbS) during silicidationWong, H.-S.; Koh, A.T.-Y.; Chin, H.-C.; Chan, L.; Samudra, G. ; Yeo, Y.-C. 
2007Source/drain-extension-last process for incorporating in situ doped lattice-mismatched extension stressor for enhanced performance in SOI N-FETWong, H.-S.; Ang, K.-W.; Chan, L.; Hoe, K.-M.; Tung, C.-H.; Balasubramaniam, N.; Weeks, D.; Landin, T.; Spear, J.; Thomas, S.G.; Samudra, G. ; Yeo, Y.-C. 
2010Strained n-channel field-effect transistors with channel proximate silicon-carbon source/drain stressors for performance enhancementKoh, S.-M.; Wong, H.-S.; Gong, X.; Ng, C.-M.; Variam, N.; Henry, T.; Erokhin, Y.; Samudra, G.S. ; Yeo, Y.-C. 
Dec-2010Strained silicon nanowire p-channel FETs with diamond-like carbon liner stressorLiu, B.; Wong, H.-S.; Yang, M.; Yeo, Y.-C. 
Aug-2007Sub-0.1-eV effective Schottky-barrier height for NiSi on n-type Si (100) using antimony segregationWong, H.-S.; Chan, L.; Samudra, G. ; Yeo, Y.-C.