Browsing by Author Wang, X.C.

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Issue DateTitleAuthor(s)
1998Characteristics of InGaAs quantum dot infrared photodetectorsXu, S.J. ; Chua, S.J. ; Mei, T.; Wang, X.C.; Zhang, X.H.; Karunasiri, G. ; Fan, W.J.; Wang, C.H.; Jiang, J.; Wang, S.; Xie, X.G.
2006Design and optimization of GaN-based semiconductor saturable absorber mirror operating at around 415 nmLin, F. ; Xiang, N. ; Wang, X.C.; Arokiaraj, J.; Liu, W.; Liu, H.F. ; Chua, S.J. 
2006Dopant activation in subamorphized silicon upon laser annealingOng, K.K.; Pey, K.L.; Lee, P.S.; Wee, A.T.S. ; Wang, X.C.; Chong, Y.F.
2006Dopant distribution in the recrystallization transient at the maximum melt depth induced by laser annealingOng, K.K.; Pey, K.L.; Lee, P.S.; Wee, A.T.S. ; Wang, X.C.; Chong, Y.F.
15-Dec-2005Effects of 248 nm excimer laser irradiation on the properties of Mg-doped GaNWang, X.C.; Lim, G.C.; Liu, W.; Soh, C.B.; Chua, S.J. 
1998Effects of rapid thermal annealing on structure and luminescence of self-assembled InAs/GaAs quantum dotsXu, S.J. ; Wang, X.C.; Chua, S.J. ; Wang, C.H.; Fan, W.J.; Jiang, J.; Xie, X.G.
2000Effects of rapid thermal annealing on the intersubband energy spacing of self-assembled InAs/GaAs quantum dotsWang, X.C.; Chua, S.J. ; Xu, S.J. ; Zhang, Z.H. 
2006Enhanced boron activation in strained-Si/Si1-xGex substrate using laser annealingOng, K.K.; Pey, K.L.; Lee, P.S.; Wee, A.T.S. ; Wang, X.C.; Wong, L.H.
1-Nov-2010Formation of epitaxial metastable NiGe2 thin film on Ge(100) by pulsed excimer laser annealLim, P.S.Y.; Chi, D.Z.; Lim, P.C.; Wang, X.C.; Chan, T.K. ; Osipowicz, T. ; Yeo, Y.-C. 
2007Formation of silicided hyper-shallow p+/n- junctions by pulsed laser annealingPey, K.L.; Ong, K.K.; Lee, P.S.; Setiawan, Y.; Wang, X.C.; Wee, A.T.S. ; Lim, G.C.
2004Formation of ultra-shallow p +/n junctions in silicon-on-insulator (SOI) substrate using laser annealingOng, K.K.; Pey, K.L.; Lee, P.S.; Wee, A.T.S. ; Chong, Y.F.; Yeo, K.L.; Wang, X.C.
2000Improved carrier transport in intermixed GaAs/AlGaAs laser structure with multi-quantum wells claddingTeng, J.H.; Chua, S.J. ; Liu, W.; Wang, X.C.; Choi, H.W.; Dong, J.R.; Li, G.; Braddoc, D.
29-Jul-2008Negative refractive index of metallic cross-I-shaped pairs: Origin and evolution with pair gap widthMa, Y.G. ; Wang, X.C.; Ong, C.K. 
1998Observation of optically-active metastable defects in undoped GaN epilayersXu, S.J. ; Li, G.; Chua, S.J. ; Wang, X.C.; Wang, W.
1998Observation of optically-active metastable defects in undoped GaN epilayersXu, S.J. ; Li, G.; Chua, S.J. ; Wang, X.C.; Wang, W.
1998Polarization dependence of intraband absorption in self-organized quantum dotsChua, S.J. ; Xu, S.J. ; Zhang, X.H. ; Wang, X.C.; Mei, T.; Fan, W.J.; Wang, C.H.; Jiang, J.; Xie, X.G.
Aug-2010Pulsed laser annealing of ultra-shallow junctions in silicon-germaniumTan, L.S. ; Tan, J.Y.; Begum, A.; Hong, M.H. ; Du, A.Y.; Bhat, M.; Wang, X.C.
2006Role of low temperature rapid thermal annealing in post-laser-annealed p-channel metal-oxide-semiconductor field effect transistorOng, K.K.; Pey, K.L.; Lee, P.S.; Wee, A.T.S. ; Wang, X.C.; Tung, C.H.; Tang, L.J.; Chong, Y.F.
8-Feb-1999Strong influence of SiO2 thin film on properties of GaN epilayersWang, X.C.; Xu, S.J. ; Chua, S.J. ; Li, K.; Zhang, X.H. ; Zhang, Z.H. ; Chong, K.B. ; Zhang, X.
2008Suppression of interference-induced reflectivity fluctuations in GaN-based semiconductor saturable absorber mirrorLin, F. ; Xiang, N. ; Wang, X.C.; Arokiaraj, J.; Liu, W.; Chua, S.J.