Browsing by Author Wang, W.D.

Showing results 1 to 14 of 14
Issue DateTitleAuthor(s)
Mar-2007An unequal-order radial interpolation meshless method for Biot's consolidation theoryWang, W.D.; Wang, J.G. ; Wang, Z.L.; Nogami, T. 
Aug-2005Effects of prolonged annealing on NiSi at low temperature (500°C)Anisur, M.R.; Osipowicz, T. ; Chi, D.Z.; Wang, W.D.
10-May-2006Effects of Si(001) surface amorphization on ErSi2 thin filmTan, E.J.; Kon, M.L.; Pey, K.L.; Lee, P.S.; Zhang, Y.W. ; Wang, W.D.; Chi, D.Z.
4-Oct-2004Electrical characteristics and suppressed boron penetration behavior of thermally stable HfTaO gate dielectrics with polycrystalline-silicon gateYu, X.; Zhu, C. ; Li, M.F. ; Chin, A.; Du, A.Y.; Wang, W.D.; Kwong, D.-L.
2004Evaluation of PECVD deposited boron nitride as copper diffusion barrier on porous low-k materialsLiu, J.; Wang, W.D.; Wang, L.; Chi, D.Z.; Loh, K.P. 
Mar-2004Fermi-Level Pinning Induced Thermal Instability in the Effective Work Function of TaN in TaN/SiO 2 Gate StackRen, C.; Yu, H.Y. ; Kang, J.F. ; Hou, Y.T. ; Li, M.-F. ; Wang, W.D.; Chan, D.S.H. ; Kwong, D.-L.
Jul-2006Growth and characterization of UHV sputtering HfO2 film by plasma oxidation and low temperature annealingLi, Q.; Wang, S.J.; Wang, W.D.; Chi, D.Z.; Huan, A.C.H.; Ong, C.K. 
2006Growth and characterization of UHV sputtering HfO2film by plasma oxidation and low temperature annealingLi, Q. ; Ong, C.K. ; Wang, S.J.; Wang, W.D.; Chi, D.Z.; Huan, A.C.H.
10-May-2006Growth of high quality Er-Ge films on Ge(001) substrates by suppressing oxygen contamination during germanidation annealingLiew, S.L.; Balakrisnan, B.; Chow, S.Y.; Lai, M.Y.; Wang, W.D.; Lee, K.Y.; Ho, C.S.; Osipowicz, T. ; Chi, D.Z.
2004High mobility and excellent electrical stability of MOSFETs using a novel HfTaO gate dielectricYu, X.; Zhu, C. ; Wang, X.P.; Li, M.F. ; Chin, A.; Du, A.Y.; Wang, W.D.; Kwong, D.-L.
2005Observation of a new kinetics to form Ni3Si2 and Ni31Si12 suicides at low temperature (200°C)Rahman, Md..A.; Osipowicz, T. ; Chi, D.Z.; Wang, W.D.
Apr-2003Physical and electrical characteristics of HfN gate electrode for advanced MOS devicesYu, H.Y. ; Lim, H.F. ; Chen, J.H. ; Li, M.F. ; Zhu, C. ; Tung, C.H.; Du, A.Y.; Wang, W.D.; Chi, D.Z.; Kwong, D.-L.
4-Nov-2002Thermal stability of (HfO2)x(Al2O 3)1-x on SiYu, H.Y. ; Wu, N.; Li, M.F. ; Zhu, C. ; Cho, B.J. ; Kwong, D.-L.; Tung, C.H.; Pan, J.S.; Chai, J.W.; Wang, W.D.; Chi, D.Z.; Ang, C.H.; Zheng, J.Z.; Ramanathan, S.
1-Mar-2004Thermal stability of nitrogen incorporated in HfN xO y gate dielectrics prepared by reactive sputteringKang, J.F. ; Yu, H.Y. ; Ren, C.; Li, M.-F. ; Chan, D.S.H. ; Hu, H.; Lim, H.F. ; Wang, W.D.; Gui, D.; Kwong, D.-L.