Browsing by Author Wang, S.J.

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Issue DateTitleAuthor(s)
Jan-2005A comparative study of five low Reynolds number k-ε models for impingement heat transferWang, S.J.; Mujumdar, A.S. 
Feb-2005A numerical investigation of some approaches to improve mixing in laminar confined impinging streamsWang, S.J.; Devahastin, S.; Mujumdar, A.S. 
Oct-2005A numerical study of flow and mixing characteristics of three-dimensional confined turbulent opposing jets: Unequal jetsWang, S.J.; Mujumdar, A.S. 
2006Ab initio studies on Schottky barrier heights at metal gate/LaAlO 3 (001) interfacesDong, Y.F.; Mi, Y.Y.; Feng, Y.P. ; Huan, A.C.H.; Wang, S.J.
2007Ab initio study on intrinsic defect properties of germanium nitride considered for gate dielectricYang, M. ; Wang, S.J.; Peng, G.W. ; Wu, R.Q. ; Feng, Y.P. 
Mar-2009Activated carbon supported Cu-Ni bimetallic catalyst for direct synthesis of DMC from CH3OH and CO2: Effect of pretreatment of Activated carbon supportsBian, J.; Xiao, M.; Wang, S.J.; Meng, Y.Z.; Lu, Y.X. 
14-Mar-2005Al2O3-incorporation effect on the band structure of Ba0.5Sr0.5TiO3 thin filmsZheng, Y.B.; Wang, S.J.; Huan, A.C.H. ; Tan, C.Y. ; Yan, L. ; Ong, C.K. 
Jul-2010Atomic and electronic structures at ZnO and ZrO 2 interface for transparent thin-film transistorsWang, S.J.; Wong, T.I.; Chen, Q.; Yang, M. ; Wong, L.M.; Chai, J.W.; Zhang, Z.; Pan, J.S.; Feng, Y.P. 
16-Jan-2014Atomic N modified rutile TiO2(110) surface layer with significant visible light photoactivityTao, J.; Yang, M. ; Chai, J.W.; Pan, J.S.; Feng, Y.P. ; Wang, S.J.
2008Band alignment and thermal stability of HfO2 gate dielectric on SiCChen, Q.; Feng, Y.P. ; Chai, J.W.; Zhang, Z.; Pan, J.S.; Wang, S.J.
2008Band alignment of yttrium oxide on various relaxed and strained semiconductor substratesChiam, S.Y.; Chim, W.K. ; Pi, C.; Huan, A.C.H.; Wang, S.J.; Pan, J.S.; Turner, S.; Zhang, J.
15-May-2010Band alignments at SrZrO3/Ge(0 0 1) interface: Thermal annealing effectsYang, M. ; Deng, W.S.; Chen, Q.; Feng, Y.P. ; Wong, L.M.; Chai, J.W.; Pan, J.S.; Wang, S.J.; Ng, C.M.
Sep-2007Band engineering in the high-k dielectrics gate stacksWang, S.J.; Dong, Y.F.; Feng, Y.P. ; Huan, A.C.H.
2009Band offsets of HfO2 /ZnO interface: In situ x-ray photoelectron spectroscopy measurement and ab initio calculationChen, Q.; Yang, M. ; Feng, Y.P. ; Chai, J.W.; Zhang, Z.; Pan, J.S.; Wang, S.J.
2006Band-gap energies and structural properties of doped Ba 0.5Sr 0.5TiO 3 thin filmsZheng, Y.B.; Wang, S.J.; Huan, A.C.H.; Tripathy, S.; Chai, J.W.; Kong, L.B. ; Ong, C.K. 
2010Characterization of La-doped (Ba0.85 Sn0.15) TiO 3 thin films grown by pulsed laser depositionWang, S.J.; Song, W.D.; Lai, M.O. ; Lu, L. 
2006Chemical tuning of band alignments for metal gate/high- κ oxide interfacesDong, Y.F.; Wang, S.J.; Feng, Y.P. ; Huan, A.C.H.
18-May-2006Co-doped TiO2 epitaxial thin films grown by sputteringHan, G.C.; Luo, P.; Guo, Z.B.; Nahar, F.U.; Tay, M.; Wu, Y.H. ; Wang, S.J.
1-Oct-2010Comparative study of aluminium-doped zinc oxide and ruthenium-aluminium co-doped zinc oxide by magnetron co-sputteringWong, L.M.; Wang, S.J.; Chim, W.K. 
17-Sep-2008Comparative study of room-temperature ferromagnetism in Cu-doped ZnO nanowires enhanced by structural inhomogeneityXing, G.Z.; Yi, J.B. ; Tao, J.G.; Liu, T. ; Wong, L.M.; Zhang, Z.; Li, G.P.; Wang, S.J.; Ding, J. ; Sum, T.C.; Huan, C.H.A.; Wu, T.