Browsing by Author Tung, C.-H.

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Issue DateTitleAuthor(s)
2006100 nm Gate Length Pt-Germanosilicide Schottky S/D PMOSFET on SGOI substrate fabricated by novel condensation approachGao, F.; Balakumar, S.; Rui, L.; Lee, S.J. ; Tung, C.-H.; Du, A.; Sudhiranjan, T.; Hwang, W.S.; Balasubramanian, N.; Lo, P.; Dong-Zhi, C.; Kwong, D.-L.
Feb-2008A high-stress liner comprising diamond-like carbon (DLC) for strained p-channel MOSFETTan, K.-M.; Zhu, M. ; Fang, W.-W.; Yang, M.; Liow, T.-Y.; Lee, R.T.P. ; Hoe, K.M.; Tung, C.-H.; Balasubramanian, N.; Samudra, G.S. ; Yeo, Y.-C. 
2007A new liner stressor with very high intrinsic stress (> 6 GPa) and low permittivity comprising diamond-like carbon (DLC) for strained p-channel transistorsTan, K.-M.; Zhu, M. ; Fang, W.-W.; Yang, M.; Liow, T.-Y.; Lee, R.T.P. ; Hoe, K.M.; Tung, C.-H.; Balasubramanian, N.; Samudra, G.S. ; Yeo, Y.-C. 
2005A novel CMOS compatible L-shaped impact-ionization MOS (LI-MOS) transistorToh, E.-H.; Wang, G.H.; Lo, G.-Q.; Balasubramanian, N.; Tung, C.-H.; Benistant, F.; Chan, L.; Samudra, G. ; Yeo, Y.-C. 
2006Aluminum oxynitride interfacial passivation layer for high-permittivity gate dielectric stack on gallium arsenideZhu, M. ; Tung, C.-H.; Yeo, Y.-C. 
2008Band edge NMOS work function for nickel fully-silicided (FUSI) gate obtained by the insertion of novel Y-, Tb-, and Yb-based interlayersLim, A.E.-J.; Lee, R.T.P. ; Wang, X.P.; Hwang, W.S.; Tung, C.-H.; Lai, D.M.Y.; Samudra, G. ; Kwong, D.-L.; Yeo, Y.-C. 
2007Beneath-the-channel Strain-Transfer-Structure (STS) and embedded source/drain stressors for strain and performance enhancement of nanoscale MOSFETsAng, K.-W.; Lin, J.; Tung, C.-H.; Balasubramanian, N.; Samudra, G. ; Yeo, Y.-C. 
2006Carrier transport characteristics of Sub-30 nm strained N-channel FinFETs featuring silicon-carbon source/drain regions and methods for further performance enhancementLiow, T.-Y.; Tan, K.-M.; Chin, H.-C.; Lee, R.T.P. ; Tung, C.-H.; Samudra, G.S. ; Balasubramanian, N.; Yeo, Y.-C. 
25-Apr-2008Concept of strain-transfer-layer and integration with graded silicon-germanium source/drain stressors for p-type field effect transistor performance enhancementWang, G.H.; Toh, E.-H.; Tung, C.-H.; Tripathy, S.; Samudra, G.S. ; Yeo, Y.-C. 
5-Dec-2002Cool copper template for the formation of oriented nanocrystalline α-tantalumYong, C.; Zhang, B.C.; Seet, C.S.; See, A.; Chan, L.; Sudijono, J.; Liew, S.L.; Tung, C.-H.; Zeng, H.C. 
Sep-2006Drive-current enhancement in FinFETs using gate-induced stressTan, K.-M.; Liow, T.-Y.; Lee, R.T.P. ; Tung, C.-H.; Samudra, G.S. ; Yoo, W.-J. ; Yeo, Y.-C. 
2007Enhanced carrier transport in strained bulk N-MOSFETs with silicon-carbon source/drain stressorsAng, K.-W.; Chui, K.-J.; Tung, C.-H.; Samudra, G. ; Balasubramanian, N.; Yeo, Y.-C. 
Apr-2007Enhanced strain effects in 25-nm gate-length thin-body nMOSFETs with silicon-carbon source/drain and tensile-stress linerAng, K.-W.; Chui, K.-J.; Tung, C.-H.; Balasubramanian, N.; Li, M.-F. ; Samudra, G.S. ; Yeo, Y.-C. 
2007Fabrication of strain relaxed silicon-germanium-on-insulator (Si 0.35Ge0.65OI) wafers using cyclical thermal oxidation and annealingWang, G.H.; Toh, E.-H.; Tung, C.-H.; Foo, Y.-L.; Tripathy, S.; Lo, G.-Q.; Samudra, G. ; Yeo, Y.-C. 
2006High quality silicon-germanium-on-insulator wafers fabricated using cyclical thermal oxidation and annealingWang, G.H.; Toh, E.-H.; Foo, Y.-L.; Tung, C.-H.; Choy, S.-F.; Samudra, G. ; Yeo, Y.-C. 
2007Hot carrier reliability of strained N-MOSFET with lattice mismatched source/drain stressorsAng, K.-W.; Wan, C.; Chui, K.-J.; Tung, C.-H.; Balasubramanian, N.; Li, M.-F. ; Samudra, G. ; Yeo, Y.-C. 
2007Impact ionization nanowire transistor with multiple-gates, silicon-germanium impact ionization region, and sub-5 mV/decade subtheshold swingToh, E.-H.; Wang, G.H.; Zhu, M. ; Shen, C.; Chan, L.; Lo, G.-Q.; Tung, C.-H.; Sylvester, D.; Heng, C.-H. ; Samudra, G. ; Yeo, Y.-C. 
2007In situ silane passivation of gallium arsenide and deposition of high-permittivity gate dielectric for MOS applicationsZhu, M. ; Chin, H.-C.; Tung, C.-H.; Yeo, Y.-C. 
Jun-2008In situ surface passivation and CMOS-compatible palladium-germanium contacts for surface-channel gallium arsenide MOSFETsChin, H.-C.; Zhu, M. ; Tung, C.-H.; Samudra, G.S. ; Yeo, Y.-C. 
2008In-situ surface passivation and metal-gate/high-k dielectric stack formation for N-channel gallium arsenide metal-oxide-semiconductor field-effect transistorsChin, H.-C.; Zhu, M. ; Whang, S.-J. ; Tung, C.-H.; Samudra, G.S. ; Yeo, Y.-C.