Browsing by Author Tripathy, S.

Select a letter below to browse by last name or type
0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z


Showing results 1 to 20 of 74  next >
Issue DateTitleAuthor(s)
2011A new route to graphene layers by selective laser ablationDhar, S. ; Barman, A.R.; Ni, G.X.; Wang, X. ; Xu, X.F. ; Zheng, Y. ; Tripathy, S.; Ariando ; Rusydi, A. ; Loh, K.P. ; Rubhausen, M.; Neto, A.H.C.; Zyilmaz, B. ; Venkatesan, T. 
2008A new source/drain germanium-enrichment process comprising Ge deposition and laser-induced local melting and recrystallization for P-FET performance enhancementLiu, F.; Wong, H.-S.; Ang, K.-W.; Zhu, M. ; Wang, X.; Lai, D.M.-Y.; Lim, P.-C.; Tan, B.L.H.; Tripathy, S.; Oh, S.-A.; Samudra, G.S. ; Balasubramanian, N.; Yeo, Y.-C. 
2005Annealing-induced group v intermixing in InAs/InP quantum dots probed by micro-Raman spectroscopyTripathy, S.; Chia, C.K.; Dong, J.R.; Chua, S.J. 
1-Aug-2004Assignment of deep levels causing yellow luminescence in GaNSoh, C.B.; Chua, S.J. ; Lim, H.F.; Chi, D.Z.; Tripathy, S.; Liu, W.
2006Band-gap energies and structural properties of doped Ba 0.5Sr 0.5TiO 3 thin filmsZheng, Y.B.; Wang, S.J.; Huan, A.C.H.; Tripathy, S.; Chai, J.W.; Kong, L.B. ; Ong, C.K. 
2-Feb-2006Bandgap engineering in semiconductor quantum dotsChia, C.K.; Dong, J.R.; Chua, S.J. ; Tripathy, S.
2014Bi-level surface modification of hard disk media by carbon using filtered cathodic vacuum arc: Reduced overcoat thickness without reduced corrosion performanceYeo, R.J.; Rismani, E.; Dwivedi, N.; Blackwood, D.J. ; Tan, H.R.; Zhang, Z.; Tripathy, S.; Bhatia, C.S. 
30-Apr-2009Carbothermal synthesis, spectral and magnetic characterization and Li-cyclability of the Mo-cluster compounds, LiYMo3O8 and Mn2Mo3O8Das, B.; Reddy, M.V. ; Krishnamoorthi, C. ; Tripathy, S.; Mahendiran, R. ; Rao, G.V.S.; Chowdari, B.V.R. 
Mar-2004Characterization of graded InGaN/GaN epilayers grown on sapphireSong, T.L.; Chua, S.J. ; Fitzgerald, E.A.; Chen, P.; Tripathy, S.
Dec-2006Comparative study of LiMn2O4 thin film cathode grown at high, medium and low temperatures by pulsed laser depositionTang, S.B. ; Lai, M.O. ; Lu, L. ; Tripathy, S.
2005Comparative study of optical properties of nanoporous GaN prepared by uv-assisted electrochemical and electroless etchingVajpeyi, A.P.; Tripathy, S.; Chua, S.J. ; Arokiaraj, J.; Fitzgerald, E.A.
25-Apr-2008Concept of strain-transfer-layer and integration with graded silicon-germanium source/drain stressors for p-type field effect transistor performance enhancementWang, G.H.; Toh, E.-H.; Tung, C.-H.; Tripathy, S.; Samudra, G.S. ; Yeo, Y.-C. 
27-Aug-2013Design and synthesis of polymer-functionalized NIR fluorescent dyes-magnetic nanoparticles for bioimagingYen, S.K.; Jańczewski, D.; Lakshmi, J.L.; Dolmanan, S.B.; Tripathy, S.; Ho, V.H.B.; Vijayaragavan, V.; Hariharan, A.; Padmanabhan, P.; Bhakoo, K.K.; Sudhaharan, T.; Ahmed, S.; Zhang, Y. ; Tamil Selvan, S.
Jun-2012Development of a ta-C wear resistant coating with composite interlayer for recording heads of magnetic tape drivesRismani, E.; Sinha, S.K. ; Yang, H. ; Tripathy, S.; Bhatia, C.S. 
23-Mar-2011Effect of pre-treatment of the substrate surface by energetic C+ ion bombardment on structure and nano-tribological characteristics of ultra-thin tetrahedral amorphous carbon (ta-C) protective coatingsRismani, E.; Sinha, S.K. ; Tripathy, S.; Yang, H. ; Bhatia, C.S. 
2-Feb-2006Effect of rapid thermal annealing on the properties of GaNAs thin films grown by molecular beam epitaxyLiu, H.F. ; Xiang, N. ; Chua, S.J. ; Tripathy, S.
2009Enhancement of erbium incorporation with implantation into nanoporous GaNSoh, C.B.; Sim, S.H.; Tripathy, S.; Chua, S.J. ; Alves, E.
2-Aug-2004Fabrication and properties of nanoporous GaN filmsWang, Y.D.; Chua, S.J. ; Sander, M.S.; Chen, P.; Tripathy, S.; Fonstad, C.G.
1-Oct-2008Fabrication of a nano-cone array on a p-GaN surface for enhanced light extraction efficiency from GaN-based tunable wavelength LEDsSoh, C.B.; Wang, B.; Chua, S.J. ; Lin, V.K.X.; Tan, R.J.N.; Tripathy, S.
2007Fabrication of strain relaxed silicon-germanium-on-insulator (Si 0.35Ge0.65OI) wafers using cyclical thermal oxidation and annealingWang, G.H.; Toh, E.-H.; Tung, C.-H.; Foo, Y.-L.; Tripathy, S.; Lo, G.-Q.; Samudra, G. ; Yeo, Y.-C.