Browsing by Author Tran, X.A.

Showing results 1 to 8 of 8
Issue DateTitleAuthor(s)
Mar-2011A high-yield HfOx-based unipolar resistive ram employing Ni electrode compatible with Si-diode selector for crossbar integrationTran, X.A.; Yu, H.Y.; Yeo, Y.C. ; Wu, L.; Liu, W.J.; Wang, Z.R.; Fang, Z.; Pey, K.L.; Sun, X.W.; Du, A.Y.; Nguyen, B.Y.; Li, M.F.
2012A self-rectifying alo y bipolar RRAM with sub-50μA set/reset current for cross-bar architectureTran, X.A.; Zhu, W.; Liu, W.J.; Yeo, Y.C. ; Nguyen, B.Y.; Yu, H.Y.
Apr-2012A self-rectifying HfO x-based unipolar RRAM with Nisi electrodeTran, X.A.; Zhu, W.G.; Gao, B.; Kang, J.F.; Liu, W.J.; Fang, Z.; Wang, Z.R.; Yeo, Y.C. ; Nguyen, B.Y.; Li, M.F.; Yu, H.Y.
2011High performance unipolar AlOy/HfOx/Ni based RRAM compatible with Si diodes for 3D applicationTran, X.A.; Gao, B.; Kang, J.F.; Wu, L.; Wang, Z.R.; Fang, Z.; Pey, K.L.; Yeo, Y.C. ; Du, A.Y.; Nguyen, B.Y.; Li, M.F.; Yu, H.Y.
Sep-2011Ni electrode unipolar resistive RAM performance enhancement by AlO y incorporation into HfOx switching dielectricsTran, X.A.; Yu, H.Y.; Gao, B.; Kang, J.F.; Sun, X.W.; Yeo, Y.-C. ; Nguyen, B.Y.; Li, M.F.
2011Self-rectifying and forming-free unipolar HfO x based-high performance RRAM built by fab-avaialbe materialsTran, X.A.; Gao, B.; Kang, J.F.; Wu, X.; Wu, L.; Fang, Z.; Wang, Z.R.; Pey, K.L.; Yeo, Y.C. ; Du, A.Y.; Liu, M.; Nguyen, B.Y.; Li, M.F.; Yu, H.Y.
2013Self-selection unipolar HfOx-Based RRAMTran, X.A.; Zhu, W.; Liu, W.J.; Yeo, Y.C. ; Nguyen, B.Y.; Yu, H.Y.
Apr-2013Switching model of taox-based nonpolar resistive random access memoryTong, X.; Wu, W.; Liu, Z.; Tran, X.A.; Yu, H.Y.; Yeo, Y.-C.