Browsing by Author Tong, Y.

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Issue DateTitleAuthor(s)
2006A CMOS carrier-less UWB transceiver for WPAN applicationsZheng, Y.; Tong, Y.; Ang, C.W.; Xu, Y.-P. ; Yeoh, W.G.; Lin, F.; Singh, R.
2005A coherent ultra-wideband receiver IC system for WPAN applicationTong, Y.; Zheng, Y.; Xu, Y.-P. 
2005A low power noncoherent CMOS UWB transceiver ICsZheng, Y.; Tong, Y.; Yan, J.; Xu, Y.-P. ; Yeoh, W.G.; Lin, F.
2013A new expandible ZnS-SiO2 liner stressor for n-channel FinFETsDing, Y.; Tong, X.; Zhou, Q. ; Liu, B.; Gyanathan, A.; Tong, Y.; Yeo, Y.-C. 
2011A new Ge 2Sb 2Te 5 (GST) liner stressor featuring stress enhancement due to amorphous-crystalline phase change for sub-20 nm p-channel FinFETsDing, Y.; Cheng, R. ; Koh, S.-M.; Liu, B.; Gyanathan, A.; Zhou, Q. ; Tong, Y.; Lim, P.S.-Y.; Han, G. ; Yeo, Y.-C. 
2001Absence of mutations in the coding regions of follicle-stimulating hormone receptor gene in Singapore Chinese women with premature ovarian failure and polycystic ovary syndromeRoy, A.C. ; Tong, Y.; Liao, W.X. ; Ng, S.C. 
2013An empirical study of information contribution to online feedback systems: A motivation perspectiveTong, Y.; Wang, X. ; Tan, C.-H.; Teo, H.-H. 
2000Association of AccI polymorphism in the follicle-stimulating hormone β gene with polycystic ovary syndromeTong, Y.; Liao, W.-X. ; Roy, A.C. ; Ng, S.C. 
2013Asymetrically strained high performance Germanium gate-all-around nanowire p-FETs featuring 3.5 nm wire width and contractible phase change liner stressor (Ge2Sb2Te5)Cheng, R. ; Liu, B.; Guo, P.; Yang, Y.; Zhou, Q. ; Gong, X.; Dong, Y.; Tong, Y.; Bourdelle, K.; Daval, N.; Delprat, D.; Nguyen, B.-Y.; Augendre, E.; Yeo, Y.-C. 
21-Aug-2002Bulk viscosity and its unstable behavior upon storage in polyimide precursor solutionsTong, Y.; Liu, T.; Veeramani, S.; Chung, T.-S. 
2012Can information technology bridge knowledge distance in organizational open innovation? An absorptive capacity perspectiveCui, T.; Tong, Y.; Teo, H.H. 
2012Do you retweet heath advice on microblogging platforms? The effects of health topic and website design on credibility assessmentJiang, J.; Tong, Y.; Tan, S.S.-L. 
2012Germanium-tin + junction formed using phosphorus ion implant and 400 °c rapid thermal annealWang, L.; Su, S.; Wang, W.; Yang, Y.; Tong, Y.; Liu, B.; Guo, P.; Gong, X.; Zhang, G.; Xue, C.; Cheng, B.; Han, G. ; Yeo, Y.-C. 
2012High performance Ω-gate Ge FinFET featuring low temperature Si 2H 6 passivation and implantless Schottky-barrier NiGe metallic source/drainLiu, B.; Gong, X.; Han, G. ; Lim, P.S.Y.; Tong, Y.; Zhou, Q. ; Yang, Y.; Daval, N.; Pulido, M.; Delprat, D.; Nguyen, B.-Y.; Yeo, Y.-C. 
2012High-performance germanium ω-Gate MuGFET with schottky-barrier nickel germanide source/drain and low-temperature disilane-passivated gate stackLiu, B.; Gong, X.; Han, G. ; Lim, P.S.Y.; Tong, Y.; Zhou, Q. ; Yang, Y.; Daval, N.; Veytizou, C.; Delprat, D.; Nguyen, B.-Y.; Yeo, Y.-C. 
Dec-2011Impact of a germanium and carbon preamorphization implant on the electrical characteristics of NiSi/Si contacts with a presilicide sulfur implantTong, Y.; Zhou, Q. ; Chua, L.H.; Thanigaivelan, T.; Henry, T.; Yeo, Y.-C. 
2007Impact of interfacial layer control using Gd2 O3 in Hf O2 gate dielectric on GaAsDalapati, G.K.; Tong, Y.; Loh, W.Y.; Mun, H.K.; Cho, B.J. 
2012Metal stanogermanide contacts with enhanced thermal stability for high mobility germanium-tin field-effect transistorWang, L.; Han, G. ; Su, S.; Zhou, Q. ; Yang, Y.; Guo, P.; Wang, W.; Tong, Y.; Lim, P.S.Y.; Xue, C.; Wang, Q.; Cheng, B.; Yeo, Y.-C. 
5-Nov-2004Morphology and fracture behavior of intercalated epoxy/clay nanocompositesLiu, T.; Tjiu, W.C.; Tong, Y.; He, C.; Goh, S.S.; Chung, T.-S. 
1999New Accl polymorphism in the follicle-stimulating hormone beta-subunit gene and its prevalence in three Southeast Asian populationsLiao, W.-X. ; Tong, Y.; Roy, A.C. ; Ng, S.C.