Browsing by Author Toh, E.-H.

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Issue DateTitleAuthor(s)
2008A complementary-I-MOS technology featuring SiGe channel and I-region for enhancement of impact-ionization, breakdown voltage, and performanceToh, E.-H.; Wang, G.H.; Chan, L.; Lo, G.-Q.; Sylvester, D.; Heng, C.-H. ; Samudra, G. ; Yeo, Y.-C. 
Feb-2008A double-spacer I-MOS transistor with shallow source junction and lightly doped drain for reduced operating voltage and enhanced device performanceToh, E.-H.; Wang, G.H.; Chan, L.; Samudra, G. ; Yeo, Y.-C. 
2009A new robust non-local algorithm for band-to-band tunneling simulation and its application to tunnel-FETShen, C.; Yang, L.T.; Toh, E.-H.; Heng, C.-H. ; Samudra, G.S. ; Yeo, Y.-C. 
2005A novel CMOS compatible L-shaped impact-ionization MOS (LI-MOS) transistorToh, E.-H.; Wang, G.H.; Lo, G.-Q.; Balasubramanian, N.; Tung, C.-H.; Benistant, F.; Chan, L.; Samudra, G. ; Yeo, Y.-C. 
2007A strained N-channel impact-ionization MOS (I-MOS) transistor with elevated silicon-carbon source/drain for performance enhancementToh, E.-H.; Wang, G.H.; Lo, G.-Q.; Choy, S.-F.; Chan, L.; Samudra, G. ; Yeo, Y.-C. 
Jul-2008Cointegration of in situ doped silicon-carbon source and silicon-carbon I-region in P-channel silicon nanowire impact-ionization transistorToh, E.-H.; Wang, G.H.; Chan, L.; Weeks, D.; Bauer, M.; Spear, J.; Thomas, S.G.; Samudra, G. ; Yeo, Y.-C. 
25-Apr-2008Concept of strain-transfer-layer and integration with graded silicon-germanium source/drain stressors for p-type field effect transistor performance enhancementWang, G.H.; Toh, E.-H.; Tung, C.-H.; Tripathy, S.; Samudra, G.S. ; Yeo, Y.-C. 
25-Apr-2008Device design and scalability of a double-gate tunneling field-effect transistor with silicon - germanium sourceToh, E.-H.; Wang, G.H.; Chan, L.; Sylvester, D.; Heng, C.-H. ; Samudra, G.S. ; Yeo, Y.-C. 
Feb-2012Device physics and design of a L-shaped germanium source tunneling transistorLow, K.L.; Zhan, C.; Han, G. ; Yang, Y.; Goh, K.-H.; Guo, P.; Toh, E.-H.; Yeo, Y.-C. 
2007Device physics and design of double-gate tunneling field-effect transistor by silicon film thickness optimizationToh, E.-H.; Wang, G.H.; Samudra, G. ; Yeo, Y.-C. 
2008Device physics and design of germanium tunneling field-effect transistor with source and drain engineering for low power and high performance applicationsToh, E.-H.; Wang, G.H.; Samudra, G. ; Yeo, Y.-C. 
2007Device physics and guiding principles for the design of double-gate tunneling field effect transistor with silicon-germanium source heterojunctionToh, E.-H.; Wang, G.H.; Chan, L.; Samudra, G. ; Yeo, Y.-C. 
25-Apr-2008Device physics and performance optimization of impact-ionization metal-oxide-semiconductor transistors formed using a double-spacer fabrication processToh, E.-H.; Wang, G.H.; Chan, L.; Samudra, G.S. ; Yeo, Y.-C. 
2007Fabrication of strain relaxed silicon-germanium-on-insulator (Si 0.35Ge0.65OI) wafers using cyclical thermal oxidation and annealingWang, G.H.; Toh, E.-H.; Tung, C.-H.; Foo, Y.-L.; Tripathy, S.; Lo, G.-Q.; Samudra, G. ; Yeo, Y.-C. 
2006High quality silicon-germanium-on-insulator wafers fabricated using cyclical thermal oxidation and annealingWang, G.H.; Toh, E.-H.; Foo, Y.-L.; Tung, C.-H.; Choy, S.-F.; Samudra, G. ; Yeo, Y.-C. 
Dec-2006I-MOS transistor with an elevated silicon-germanium impact-ionization region for bandgap engineeringToh, E.-H.; Wang, G.H.; Chan, L.; Lo, G.-Q.; Samudra, G. ; Yeo, Y.-C. 
2007Impact ionization nanowire transistor with multiple-gates, silicon-germanium impact ionization region, and sub-5 mV/decade subtheshold swingToh, E.-H.; Wang, G.H.; Zhu, M. ; Shen, C.; Chan, L.; Lo, G.-Q.; Tung, C.-H.; Sylvester, D.; Heng, C.-H. ; Samudra, G. ; Yeo, Y.-C. 
2007On the performance limit of impact-ionization transistorsShen, C.; Lin, J.-Q.; Toh, E.-H.; Chang, K.-F.; Bait, P.; Heng, C.-H. ; Samudra, G.S. ; Yeo, Y.-C. 
2008P-channel I-MOS transistor featuring silicon nano-wire with multiple-gates, strained Si1-yCy I-region, in situ doped Si 1-yCy source, and sub-5 mV/decade subthreshold swingToh, E.-H.; Wang, G.H.; Weeks, D.; Zhu, M. ; Bauer, M.; Spear, J.; Chan, L.; Thomas, S.G.; Samudra, G. ; Yeo, Y.-C. 
2012PBTI characteristics of N-channel tunneling field effect transistor with HfO 2 gate dielectric: New insights and physical modelHan, G. ; Yang, Y.; Guo, P.; Zhan, C.; Low, K.L.; Goh, K.H.; Liu, B.; Toh, E.-H.; Yeo, Y.-C.