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Browsing by Author Thanigaivelan, T.

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	Issue Date	Title	Author(s)
	2013	Contact resistance reduction for strained N-MOSFETs with silicon-carbon source/drain utilizing aluminum ion implant and aluminum profile engineering	Zhou, Q. ; Koh, S.-M.; Thanigaivelan, T.; Henry, T.; Yeo, Y.-C.
	Dec-2011	Impact of a germanium and carbon preamorphization implant on the electrical characteristics of NiSi/Si contacts with a presilicide sulfur implant	Tong, Y.; Zhou, Q. ; Chua, L.H.; Thanigaivelan, T.; Henry, T.; Yeo, Y.-C.
	2011	Novel technique to engineer aluminum profile at nickel-silicide/silicon: carbon interface for contact resistance reduction, and integration in strained N-MOSFETs with silicon-carbon stressors	Koh, S.-M.; Zhou, Q. ; Thanigaivelan, T.; Henry, T.; Samudra, G.S. ; Yeo, Y.C.
	1-Oct-2011	Schottky barrier height tuning of silicides on p-type Si (100) by aluminum implantation and pulsed excimer laser anneal	Koh, S.-M.; Wang, X.; Thanigaivelan, T.; Henry, T.; Erokhin, Y.; Samudra, G.S. ; Yeo, Y.-C.

Showing results 1 to 4 of 4