Browsing by Author Tang, L.J.

Showing results 1 to 17 of 17
Issue DateTitleAuthor(s)
2004A new breakdown failure mechanism in HfO 2 gate dielectricRanjan, R.; Pey, K.L.; Tang, L.J.; Tung, C.H.; Groeseneken, G.; Radhakrishnan, M.K. ; Kaczer, B.; Degraeve, R.; De Gendt, S.
1-Jan-2005Annealing and oxidation of silicon oxide films prepared by plasma-enhanced chemical vapor depositionChen, X.Y.; Lu, Y.F.; Tang, L.J.; Wu, Y.H. ; Cho, B.J. ; Xu, X.J.; Dong, J.R.; Song, W.D.
30-Dec-2006Correlation between optical properties and Si nanocrystal formation of Si-rich Si oxide films prepared by plasma-enhanced chemical vapor depositionChen, X.Y.; Lu, Y.F.; Wu, Y.H. ; Cho, B.J. ; Tang, L.J.; Lu, D.; Dong, J.R.
Sep-2003Correlation of failure mechanism of constant-current-stress and constant-voltage-stress breakdowns in ultrathin gate oxides of nMOSFETs by TEMPey, K.L.; Tung, C.H.; Radhakrishnan, M.K. ; Tang, L.J.; Sun, Y.; Wang, X.D.; Lin, W.H.
2005Dual metal gate process by metal substitution of dopant-free polysilicon on high-K dielectricPark, C.S. ; Cho, B.J. ; Hwang, W.S.; Loh, W.Y.; Tang, L.J.; Kwong, D.-L.
Oct-2005Electron mobility enhancement using ultrathin pure Ge on Si substrateYeo, C.C.; Cho, B.J. ; Gao, F.; Lee, S.J. ; Lee, M.H.; Yu, C.-Y.; Liu, C.W.; Tang, L.J.; Lee, T.W.
2004Gate dielectric degradation mechanism associated with DBIE evolutionPey, K.L.; Ranjan, R.; Tung, C.H.; Tang, L.J.; Lin, W.H.; Radhakrishnan, M.K. 
Mar-2004Gate Dielectric-Breakdown-Induced Microstructural Damage in MOSFETsTang, L.J.; Pey, K.L.; Tung, C.H.; Radhakrishnan, M.K. ; Lin, W.H.
2004Geometry dependence of gate oxide breakdown evolutionSun, Y.; Pey, K.L.; Tung, C.H.; Lombardo, S.; Palumbo, F.; Tang, L.J.; Radhakrishnan, M.K. 
2004Germanium p- & n-MOSFETs fabricated with novel surface passivation (plasma-PH 3 and thin AlN) and TaN/HfO 2 gate stackWhang, S.J. ; Lee, S.J. ; Gao, F.; Wu, N.; Zhu, C.X. ; Pan, J.S.; Tang, L.J.; Kwong, D.L.
2005Impact of buried capping layer on TDDB physics of advanced interconnectsYiang, K.Y.; Yoo, W.J. ; Krishnamoorthy, A.; Tang, L.J.
2006Role of low temperature rapid thermal annealing in post-laser-annealed p-channel metal-oxide-semiconductor field effect transistorOng, K.K.; Pey, K.L.; Lee, P.S.; Wee, A.T.S. ; Wang, X.C.; Tung, C.H.; Tang, L.J.; Chong, Y.F.
6-Oct-2003Size difference in dielectric-breakdown-induced epitaxy in narrow n- and p-metal oxide semiconductor field effect transistorsPey, K.L.; Tung, C.H.; Tang, L.J.; Lin, W.H.; Radhakrishnan, M.K. 
2004Structural analysis of breakdown in ultrathin gate dielectrics using transmission electron microscopyPey, K.L.; Tung, C.H.; Tang, L.J.; Ranjan, R.; Radhakrishnan, M.K. ; Lin, W.H.; Lombardo, S.; Palumbo, F.
2004Structure of the breakdown spot during progressive breakdown of ultra-thin gate oxidesPalumbo, F.; Lombardo, S.; Pey, K.L.; Tang, L.J.; Tung, C.H.; Lin, W.H.; Radhakrishnan, M.K. ; Falci, G.
2004Substituted aluminum metal gate on high-K dielectric for low work-function and fermi-level pinning freePark, C.S. ; Cho, B.J. ; Tang, L.J.; Kwong, D.-L.
14-Mar-2005Surface passivation using ultrathin AlN x film for Ge-metal-oxide-semiconductor devices with hafnium oxide gate dielectricGao, F.; Lee, S.J. ; Pan, J.S.; Tang, L.J.; Kwong, D.-L.