Browsing by Author Shen, C.

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Issue DateTitleAuthor(s)
Jul-2012A concise, efficient synthesis of sugar-based benzothiazoles through chemoselective intramolecular C-S couplingShen, C.; Xia, H.; Yan, H.; Chen, X.; Ranjit, S.; Xie, X.; Tan, D.; Lee, R.; Yang, Y.; Xing, B.; Huang, K.-W.; Zhang, P.; Liu, X. 
Jan-2006A fast measurement technique of MOSFET Id-Vg characteristicsShen, C.; Li, M.-F. ; Wang, X.P.; Yeo, Y.-C. ; Kwong, D.-L.
2005A new gate dielectric HfLaO with metal gate work function tuning capability and superior NMOSFETs performanceWang, X.P.; Li, M.F. ; Chin, A. ; Zhu, C. ; Chi, R.; Yu, X.F.; Shen, C.; Du, A.Y.; Chan, D.S.H. ; Kwong, D.-L.
Mar-2011A new robust non-local algorithm for band-to-band tunneling simulation and its application to tunnel-FETShen, C.; Yang, L.-T.; Samudra, G. ; Yeo, Y.-C. 
2009A new robust non-local algorithm for band-to-band tunneling simulation and its application to tunnel-FETShen, C.; Yang, L.T.; Toh, E.-H.; Heng, C.-H. ; Samudra, G.S. ; Yeo, Y.-C. 
2008A variational approach to the two-dimensional nonlinear Poisson's equation for the modeling of tunneling transistorsShen, C.; Ong, S.-L.; Heng, C.-H. ; Samudra, G. ; Yeo, Y.-C. 
2013Algorithms for the majority rule (+) consensus tree and the frequency difference consensus treeJansson, J.; Shen, C.; Sung, W.-K. 
2013An innovative way of etching MoS2: Characterization and mechanistic investigationHuang, Y.; Wu, J.; Xu, X. ; Ho, Y.; Ni, G.; Zou, Q.; Koon, G.K.W.; Zhao, W.; Castro Neto, A.H. ; Eda, G. ; Shen, C.; Özyilmaz, B. 
2013An optimal algorithm for building the majority rule consensus treeJansson, J.; Shen, C.; Sung, W.-K. 
2008Asymmetric energy distribution of interface traps in germanium MOSFETs with HfO2 gate dielectricXie, R.; Wu, N.; Shen, C.; Zhu, C. 
2005BTI and charge trapping in germanium p- And n-MOSFETs with CVD HfO 2 gate dielectricWu, N.; Zhang, Q.; Zhu, C. ; Shen, C.; Li, M.F. ; Chan, D.S.H. ; Balasubramanian, N.
2006Characterization and physical origin of fast vth Transient in NBTI of pMOSFETs with SiON dielectricShen, C.; Li, M.-F. ; Foo, C.E.; Yang, T.; Huang, D.M.; Yaps, A.; Samudra, G.S. ; Yeo, Y.-C. 
2008Compact HSPICE model for IMOS deviceLin, J. ; Toh, E.H.; Shen, C.; Sylvester, D.; Heng, C.H. ; Samudra, G. ; Yeo, Y.C. 
4-Nov-2011Copper-mediated C-H activation/C-S cross-coupling of heterocycles with thiolsRanjit, S.; Lee, R.; Heryadi, D.; Shen, C.; Wu, J.; Zhang, P.; Huang, K.-W.; Liu, X. 
2006Dual metal gates with band-edge work functions on novel HfLaO high- κ gate dielectricWang, X.P.; Shen, C.; Li, M.-F. ; Yu, H.Y.; Sun, Y. ; Feng, Y.P. ; Lim, A.; Sik, H.W.; Chin, A.; Yeo, Y.C. ; Lo, P.; Kwong, D.L.
Nov-2004Dynamic bias-temperature instability in ultrathin SiO 2 and HfO 2 metal-oxide-semiconductor field effect transistors and its impact on device lifetimeLi, M.F. ; Chen, G.; Shen, C.; Wang, X.P.; Yu, H.Y. ; Yeo, Y.-C. ; Kwong, D.L.
20-Sep-2004Electron mobility in Ge and strained-Si channel ultrathin-body metal-oxide semi conductor field-effect transistorsLow, T.; Li, M.F. ; Shen, C.; Yeo, Y.-C. ; Hou, Y.T. ; Zhu, C. ; Chin, A.; Kwong, D.L.
2008Energy distribution of interface traps in germanium metal-oxide- semiconductor field effect transistors with HfO2 gate dielectric and its impact on mobilityXie, R.; Wu, N.; Shen, C.; Zhu, C. 
2005Fast and slow dynamic NBTI components in p-MOSFET with SiON dielectric and their impact on device life-time and circuit applicationYang, T.; Li, M.F. ; Shen, C.; Ang, C.H.; Zhu, C. ; Yeo, Y.C. ; Samudra, G. ; Rustagi, S.C.; Yu, M.B.; Kwong, D.L.
Nov-2005Fast DNBTI components in p-MOSFET with SiON dielectricYang, T.; Shen, C.; Li, M.F. ; Ang, C.H.; Zhu, C.X. ; Yeo, Y.-C. ; Samudra, G. ; Rustagi, S.C.; Yu, M.B.; Kwong, D.-L.