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Issue DateTitleAuthor(s)
2002A robust and production worthy addressable array architecture for deep sub-micron MOSFET's matching characterizationYeo, S.B.; Bordelon, J.; Chu, S.; Li, M.F. ; Tranchina, B.A.; Harward, M.; Chan, L.H.; See, A.
29-May-2000Annealing of ultrashallow p+/n junction by 248 nm excimer laser and rapid thermal processing with different preamorphization depthsChong, Y.F.; Pey, K.L. ; Wee, A.T.S. ; See, A.; Chan, L.; Lu, Y.F.; Song, W.D.; Chua, L.H.
2004Boron profile narrowing in laser-processed silicon after rapid thermal annealPoon, C.H.; Tan, L.S. ; Cho, B.J. ; See, A.; Bhat, M.
15-Oct-2004Characterization of HfO2/Si(0 0 1) interface with high-resolution rutherford backscattering spectroscopyNakajima, K.; Joumori, S.; Suzuki, M.; Kimura, K.; Osipowicz, T. ; Tok, K.L.; Zheng, J.Z.; See, A.; Zhang, B.C.
1-Aug-2002Control of transient enhanced diffusion of boron after laser thermal processing of preamorphized siliconChong, Y.F.; Pey, K.L. ; Wee, A.T.S. ; Osipowicz, T. ; See, A.; Chan, L.
5-Dec-2002Cool copper template for the formation of oriented nanocrystalline α-tantalumYong, C.; Zhang, B.C.; Seet, C.S.; See, A.; Chan, L.; Sudijono, J.; Liew, S.L.; Tung, C.-H.; Zeng, H.C. 
2004Crystallographic orientation of Ta/TaN bilayer and its effect on seed and bulk Cu 〈111〉 formationHo, C.S.; Liew, S.L.; See, A.; Lim, C.Y.H. 
15-Feb-2002Effect of degree of amorphization of Si on the formation of titanium silicideTan, C.C.; Lu, L. ; See, A.; Chan, L.
Jul-2004Effect of halogen in high-density oxygen plasmas on photoresist trimmingSin, C.-Y.; Chen, B.-H. ; Loh, W.L.; Yu, J.; Yelehanka, P.; See, A.; Chan, L.
10-Nov-2002Effect of silicon substrate amorphization on the kinetics of reaction between a titanium thin film and siliconTan, C.C.; Lu, L. ; See, A.; Chan, L.
May-2001Effects of oxygen flooding on crater bottom composition and roughness in ultrashallow secondary ion mass spectrometry depth profilingNg, C.M.; Wee, A.T.S. ; Huan, C.H.A. ; See, A.
2002Effects of poly-Si annealing on gate oxide charging damage in Poly-Si gate etching processChong, D.; Yoo, W.J. ; Chan, L.; See, A.
Jan-2002Enhanced stability of Ni monosilicide on MOSFETs poly-Si gate stackLee, P.S.; Mangelinck, D.; Pey, K.L. ; Ding, J. ; Chi, D.Z.; Osipowicz, T. ; Dai, J.Y.; See, A.
Aug-2002Impact of indium and boron interaction on device performance for short and narrow channel n-metal oxide semiconductor field effect transistorsOng, S.Y.; Chor, E.F. ; Lee, J.; See, A.; Chan, L.
Nov-2002Investigation of active Si pitting and its impact on 0.15 and 0.30 μm n-type metal-oxide-semiconductor and p-type metal-oxide-semiconductor transistorsChua, C.S.; Chor, E.F. ; Goh, F.; See, A.; Chan, L.
Nov-2002Investigation of active Si pitting and its impact on 0.15 and 0.30 μm n-type metal-oxide-semiconductor and p-type metal-oxide-semiconductor transistorsChua, C.S.; Chor, E.F. ; Goh, F.; See, A.; Chan, L.
Jan-2003Investigation of boron penetration through decoupled plasma nitrided gate oxide using backside secondary ion mass spectrometry depth profilingYeo, K.L.; Wee, A.T.S. ; Liu, R. ; Zhou, F.F.; See, A.
11-Nov-2002Laser-induced amorphization of silicon during pulsed-laser irradiation of Tin/Ti/polycrystalline silicon/SiO2/siliconChong, Y.F.; Pey, K.L. ; Wee, A.T.S. ; Thompson, M.O.; Tung, C.H.; See, A.
Mar-2002Layer inversion of Ni(Pt)Si on mixed phase Si filmsLee, P.S.; Pey, K.L. ; Mangelinck, D.; Ding, J. ; Osipowicz, T. ; See, A.
6-Nov-2000Liquid-phase epitaxial growth of amorphous silicon during laser annealing of ultrashallow p+/n junctionsChong, Y.F.; Pey, K.L. ; Lu, Y.F. ; Wee, A.T.S. ; Osipowicz, T. ; Seng, H.L. ; See, A.; Dai, J.-Y.