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Browsing by Author Sa, N.

Showing results 1 to 5 of 5

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	Issue Date	Title	Author(s)
	Apr-2005	Improved electrical and reliability characteristics of hfn-hfo2-gated nMOSFET with 0.95-nm EOT fabricated using a gate-first process	Kang, F.J.; Yu, H.Y. ; Ren, C.; Wang, X.P.; Li, M.-F. ; Chan, D.S.H. ; Yeo, Y.-C. ; Sa, N.; Yang, H.; Liu, X.Y.; Han, R.Q.; Kwong, D.-L.
	Sep-2005	Mechanism of positive-bias temperature instability in sub-1-nm TaN/HfN/HfO2 gate stack with low preexisting traps	Sa, N.; Kang, J.F.; Yang, H.; Liu, X.Y.; He, Y.D.; Han, R.Q.; Ren, C.; Yu, H.Y.; Chan, D.S.H. ; Kwong, D.-L.
	2007	Scalability and reliability characteristics of cvd hf o2 gate dielectrics with HfN electrodes for advanced CMOS applications	Kang, J.F.; Yu, H.Y.; Ren, C.; Sa, N.; Yang, H.; Li, M.-F. ; Chan, D.S.H. ; Liu, X.Y.; Han, R.Q.; Kwong, D.-L.
	2005	Scalability and reliability of TaN/HfN/HfO2 gate stacks fabricated by a high temperature process	Kang, J.F.; Yu, H.Y.; Ren, C.; Yang, H.; Sa, N.; Liu, X.Y.; Han, R.Q.; Li, M.-F. ; Chan, D.S.H. ; Kwong, D.-L.
	2004	TDDB characteristics of ultra-thin HfN/HfO2 gate stack	Yang, H.; Sa, N.; Tang, L.; Liu, X.; Kang, J.; Han, R.; Yu, H.Y. ; Ren, C.; Li, M.-F. ; Chan, D.S.H. ; Kwong, D.-L.

Showing results 1 to 5 of 5