Browsing by Author Ramam, A.

Showing results 1 to 11 of 11
Issue DateTitleAuthor(s)
9-Jul-2012Bonding and diffusion of nitrogen in the InSbN alloys fabricated by two-step ion implantationWang, Y.; Zhang, D.H.; Chen, X.Z.; Jin, Y.J.; Li, J.H.; Liu, C.J. ; Wee, A.T.S. ; Zhang, S.; Ramam, A.
Sep-2001Characterization of inductively coupled plasma etched surface of GaN using Cl2/BCl3 chemistryTripathy, S. ; Ramam, A.; Chua, S.J.; Pan, J.S.; Huan, A.
15-Feb-2002Electronic and vibronic properties of Mg-doped GaN: The influence of etching and annealingTripathy, S. ; Chua, S.J. ; Ramam, A.; Sia, E.K.; Pan, J.S.; Lim, R.; Yu, G. ; Shen, Z.X. 
6-May-2002Electronic and vibronic properties of n-type GaN: The influence of etching and annealingTripathy, S. ; Chua, S.J. ; Ramam, A.
May-2008GaN and ZnO freestanding micromechanical structures on silicon-on-insulator substratesTripathy, S.; Vicknesh, S.; Wang, L.S.; Lin, V.K.X.; Oh, S.A.; Grover, R.; Zang, K.Y.; Arokiaraj, J.; Tan, J.N.; Kumar, B. ; Gong, H. ; Shannigrahi, S.R.; Ramam, A.; Chua, S.J.
27-May-2010InSbN based p-n junctions for infrared photodetectionChen, X.Z.; Zhang, D.H.; Liu, W.; Wang, Y.; Li, J.H.; Wee, A.T.S. ; Ramam, A.
2002Interplay of defects, microstructures, and surface stoichiometry during plasma processing of GaNRamam, A.; Tripathy, S. ; Chua, S.J. 
1-May-2002Micro-Raman scattering in laterally epitaxial overgrown GaNTripathy, S. ; Chua, S.J. ; Hao, M.S.; Sia, E.K.; Ramam, A.; Zhang, J.; Sun, W.H.; Wang, L.S.
2004Proton Beam Writing of Passive Polymer Optical WaveguidesSum, T.C. ; Bettiol, A.A.; Venugopal Rao, S.; Van Kan, J.A.; Ramam, A.; Watt, F.
Dec-2001Study of electrically active defects in n-GaN layerSoh, C.B.; Chi, D.Z.; Ramam, A.; Lim, H.F.; Chua, S.J. 
2008Understanding of carbon/fluorine Co-implant effect on boron-doped junction formed during soak annealingYeong, S.H.; Colombeau, B.; Mok, K.R.C.; Benistant, F.; Liu, C.J. ; Wee, A.T.S. ; Chan, L.; Ramam, A.; Srinivasan, M.P.