Browsing by Author Prasad, K.

Showing results 1 to 10 of 10
Issue DateTitleAuthor(s)
May-2001Correspondence: Effects of deliberate copper contamination from the plating solution on the electrical characteristics of MOSFETsTee, K.C.; Prasad, K.; Lee, C.S.; Gong, H. ; Cha, C.L.; Chan, L.; See, A.K.
1999Effect of Cu contamination on electrical characteristics for PMOS transistorsTee, K.C.; Prasad, K.; Lee, C.S.; Gong, H. ; Chan, L.; See, A.K.
Sep-1985EFFECT OF OXYGEN INCORPORATION OF BHF ETCH RATE OF PLASMA-ENHANCED CVD SILICON NITRIDE FILMS PREPARED IN THE TEMPERATURE RANGE 50-300 degree C.Ling, C.H. ; Kwok, C.Y.; Prasad, K.
1999Enhancement of hot-carrier injection resistance for deep submicron transistor gate dielectric with a powered solenoidCha, C.-L.; Tee, K.-C.; Chor, E.-F. ; Gong, H. ; Prasad, K.; Bourdillon, A.J. ; See, A. ; Chan, L.; Lee, M.M.-O.
1-Oct-2010Plasma membrane-bound AGC3 kinases phosphorylate PIN auxin carriers at TPRXS(N/S) motifs to direct apical PIN recyclingDhonukshe, P.; Huang, F.; Galvan-Ampudia, C.S.; Mähönen, A.P.; Kleine-Vehn, J.; Xu, J. ; Quint, A.; Prasad, K.; Friml, J.; Scheres, B.; Offringa, R.
Oct-1986SILICON NITRIDE FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOUR DEPOSITION (PECVD) OF SiH//4/NH//3/N//2 MIXTURES: SOME PHYSICAL PROPERTIES.Ling, C.H. ; Kwok, C.Y.; Prasad, K.
Oct-1986SILICON NITRIDE FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOUR DEPOSITION (PECVD) OF SiH//4/NH//3/N//2 MIXTURES: SOME PHYSICAL PROPERTIES.Ling, C.H. ; Kwok, C.Y.; Prasad, K.
Sep-2004Study of interactions between α-Ta films and SiO2 under rapid thermal annealingYuan, Z.L. ; Zhang, D.H.; Li, C.Y.; Prasad, K.; Tan, C.M.
Sep-2004Thermal stability of Cu/α-Ta/SiO2/Si structuresYuan, Z.L. ; Zhang, D.H.; Li, C.Y.; Prasad, K.; Tan, C.M.
1999Thermal studies on stress-induced void-like defects in epitaxial-CoSi 2 formationHo, C.S.; Pey, K.L. ; Tung, C.H.; Tee, K.C.; Prasad, K.; Saigal, D.; Tan, J.J.L.; Wong, H.; Lee, K.H.; Osipowicz, T. ; Chua, S.J. ; Karunasiri, R.P.G.