Browsing by Author Ng, C.M.

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Issue DateTitleAuthor(s)
1-May-2011Ambiguity in the magnitude and direction of the derived interface dipole in lanthanum aluminate heterostructures: Implications and proposed solutionLiu, Z.Q.; Chim, W.K. ; Chiam, S.Y.; Pan, J.S.; Ng, C.M.
14-Sep-2012An interface dipole predictive model for high-k dielectric/semiconductor heterostructures using the concept of the dipole neutrality pointLiu, Z.Q.; Chim, W.K. ; Chiam, S.Y.; Pan, J.S.; Ng, C.M.
Jan-2006Application of molecular dynamics for low-energy ion implantation in crystalline siliconChan, H.Y.; Srinivasan, M.P. ; Montgomery, N.J.; Mulcahy, C.P.A.; Biswas, S.; Gossmann, H.-J.L.; Harris, M.; Nordlund, K.; Benistant, F.; Ng, C.M.; Gui, D.; Chan, L.
15-May-2010Band alignments at SrZrO3/Ge(0 0 1) interface: Thermal annealing effectsYang, M. ; Deng, W.S.; Chen, Q.; Feng, Y.P. ; Wong, L.M.; Chai, J.W.; Pan, J.S.; Wang, S.J.; Ng, C.M.
1-May-2013Band gap, band offsets and dielectric constant improvement by addition of yttrium into lanthanum aluminateLiu, Z.Q.; Chim, W.K. ; Chiam, S.Y.; Pan, J.S.; Ng, C.M.
1-Nov-2007Characterization of biaxial stressed silicon by spectroscopic ellipsometry and synchrotron x-ray scatteringWong, T.K.S.; Gong, Y.; Yang, P. ; Ng, C.M.
May-2001Effects of oxygen flooding on crater bottom composition and roughness in ultrashallow secondary ion mass spectrometry depth profilingNg, C.M.; Wee, A.T.S. ; Huan, C.H.A. ; See, A.
2009Effects of thermal annealing on the band alignment of lanthanum aluminate on silicon investigated by x-ray photoelectron spectroscopyLiu, Z.Q.; Chiam, S.Y.; Chim, W.K. ; Pan, J.S.; Ng, C.M.
1-Nov-2011Evaluating the use of electronegativity in band alignment models through the experimental slope parameter of lanthanum aluminate heterostructuresLiu, Z.Q.; Chim, W.K. ; Chiam, S.Y.; Pan, J.S.; Ng, C.M.
Sep-2002Evaluation of the silicon capping technique in SIMSNg, C.M.; Wee, A.T.S. ; Huan, C.H.A.; Ho, C.S.; Yakovlev, N.; See, A. 
27-Feb-2012Formation of the yttrium/germanium interface: Fermi-level pinning and intermixing at room temperatureLiu, Z.Q.; Chim, W.K. ; Chiam, S.Y.; Pan, J.S.; Ng, C.M.
Jan-2011Germanium nanowire metal-oxide-semiconductor field-effect transistor fabricated by complementary-metal-oxide-semiconductor-compatible processPeng, J.W.; Singh, N.; Lo, G.Q.; Bosman, M.; Ng, C.M.; Lee, S.J. 
2008Inducing ferromagnetism in ZnO through doping of nonmagnetic elementsMa, Y.W.; Yi, J.B. ; Ding, J. ; Van, L.H. ; Zhang, H.T. ; Ng, C.M.
Nov-2012Interfacial-layer-free growth of yttrium oxide on germanium by understanding initial surface reactionsLiu, Z.Q.; Chim, W.K. ; Chiam, S.Y.; Pan, J.S.; Chun, S.R.; Liu, Q.; Ng, C.M.
2007Localization of Cu/low-k interconnect reliability defects by pulsed laser induced techniqueTan, T.L.; Quah, A.C.T.; Gan, C.L.; Phang, J.C.H. ; Chua, C.M.; Ng, C.M.; Du, A.-Y.
2009Mechanism of room temperature ferromagnetism in ZnO doped with AlMa, Y.W.; Ding, J. ; Yi, J.B. ; Zhang, H.T. ; Ng, C.M.
2009Mechanism of room temperature ferromagnetism in ZnO doped with AlMa, Y.W.; Ding, J. ; Yi, J.B. ; Zhang, H.T. ; Ng, C.M.
10-May-2006Molecular dynamics with phase-shift-based electronic stopping for calibration of ion implantation profiles in crystalline siliconChan, H.Y.; Nordlund, K.; Gossmann, H.-J.L.; Harris, M.; Montgomery, N.J.; Mulcahy, C.P.A.; Biswas, S.; Srinivasan, M.P. ; Benistant, F.; Ng, C.M.; Chan, L.
31-May-2012Orientation control of epitaxial Ge thin films growth on SrTiO 3 (100) by ultrahigh vacuum sputteringDeng, W.; Yang, M. ; Chai, J.; Wong, T.I.; Du, A.; Ng, C.M.; Feng, Y. ; Wang, S.
2010Room temperature ferromagnetism in Al-doped/Al2O 3-doped ZnO filmMa, Y.W.; Ding, J. ; Ran, M. ; Huang, X.L.; Ng, C.M.