Browsing by Author Ng, C.-M.

Showing results 1 to 7 of 7
Issue DateTitleAuthor(s)
2010Carrier transport characteristics of strained N-MOSFET featuring channel proximate silicon-carbon source/drain stressors for performance boostKoh, S.-M.; Zhang, P.; Ren, S.-F.; Ng, C.-M.; Samudra, G.S. ; Yeo, Y.-C. 
Nov-2011Contact-resistance reduction for strained n-FinFETs with silicon-carbon source/drain and platinum-based silicide contacts featuring tellurium implantation and segregationKoh, S.-M.; Kong, E.Y.-J.; Liu, B.; Ng, C.-M.; Samudra, G.S. ; Yeo, Y.-C. 
2011New Tellurium implant and segregation for contact resistance reduction and single metallic silicide technology for independent contact resistance optimization in n- and p-FinFETsKoh, S.-M.; Kong, E.Y.J.; Liu, B.; Ng, C.-M.; Liu, P.; Mo, Z.-Q.; Leong, K.-C.; Samudra, G.S. ; Yeo, Y.-C. 
2010Schottky barrier height modulation with aluminum segregation and pulsed laser anneal: A route for contact resistance reductionKoh, S.-M.; Ng, C.-M.; Liu, P.; Mo, Z.-Q.; Wang, X.; Zheng, H.; Zhao, Z.-Y.; Variam, N.; Henry, T.; Erokhin, Y.; Samudra, G.S. ; Yeo, Y.-C. 
2009Siliconr: Carbon source/drain stressors: Intégration of a novel nickel aluminide-silicide and post-solid-phase-epitaxy anneal for reduced schottky-barrier and leakageKoh, S.-M.; Zhou, W.J.; Lee, R.T.P. ; Sinha, M.; Ng, C.-M.; Zhao, Z.; Maynard, H.; Variam, N.; Erokhin, Y.; Samudra, G. ; Yeo, Y.-C. 
2010Strained n-channel field-effect transistors with channel proximate silicon-carbon source/drain stressors for performance enhancementKoh, S.-M.; Wong, H.-S.; Gong, X.; Ng, C.-M.; Variam, N.; Henry, T.; Erokhin, Y.; Samudra, G.S. ; Yeo, Y.-C. 
2009Sulfur implant for reducing nickel silicide contact resistance in FinFETs with silicon-carbon source/drainKoh, S.-M.; Sinha, M.; Tong, Y.; Chin, H.-C.; Fang, W.-W.; Zhang, X.; Ng, C.-M.; Samudra, G. ; Yeo, Y.-C.