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| Issue Date | Title | Author(s) |
| 5-Dec-2005 | Bimodal distribution of damage morphology generated by ion implantation | Mok, K.R.C.; Jaraiz, M.; Martin-Bragado, I.; Rubio, J.E.; Castrillo, P.; Pinacho, R.; Srinivasan, M.P. ; Benistant, F. |
| 2008 | Comprehensive model of damage accumulation in silicon | Mok, K.R.C.; Benistant, F.; Jaraiz, M.; Rubio, J.E.; Castrillo, P.; Pinacho, R.; Srinivasan, M.P. |
| 5-Dec-2005 | Comprehensive modeling of ion-implant amorphization in silicon | Mok, K.R.C.; Jaraiz, M.; Martin-Bragado, I.; Rubio, J.E.; Castrillo, P.; Pinacho, R.; Srinivasan, M.P. ; Benistant, F. |
| 5-Dec-2008 | Experimental and simulation study of the flash lamp annealing for boron ultra-shallow junction formation and its stability | Mok, K.R.C.; Yeong, S.H.; Colombeau, B.; Benistant, F.; Poon, C.H.; Chan, L.; Srinivasan, M.P. |
| 5-Dec-2005 | Ion-implant simulations: The effect of defect spatial correlation on damage accumulation | Mok, K.R.C.; Jaraiz, M.; Martin-Bragado, I.; Rubio, J.E.; Castrillo, P.; Pinacho, R.; Srinivasan, M.P. ; Benistant, F. |
| 2006 | Modeling and simulation of the influence of SOI structure on damage evolution and ultra-shallow junction formed by Ge preamorphization implants and solid phase epitaxial regrowth | Mok, K.R.C.; Colombeau, B.; Jaraiz, M.; Castrillo, P.; Rubio, J.E.; Pinacho, R.; Srinivasan, M.P. ; Benistant, F.; Martin-Bragado, I.; Hamilton, J.J. |
| 2003 | On the deformation of a slender bubble in a Carreau-Yasuda liquid in an extensional flow | Mok, K.R.C.; Chia, H.B.R.; Favelukis, M. |
| 2003 | On the deformation of a slender bubble in a Carreau-Yasuda liquid in an extensional flow | Mok, K.R.C.; Chia, H.B.R.; Favelukis, M. |
| 2008 | The impact of boron halo on phosphorus junction formation and stability | Yeong, S.H.; Colombeau, B.; Mok, K.R.C.; Benistant, F.; Chan, L.; Srinivasan, M.P. |
| 2008 | The impact of boron halo on phosphorus junction formation and stability | Yeong, S.H.; Colombeau, B.; Mok, K.R.C.; Benistant, F.; Chan, L.; Srinivasan, M.P. |
| 5-Dec-2008 | The impact of nitrogen co-implantation on boron ultra-shallow junction formation and underlying physical understanding | Yeong, S.H.; Colombeau, B.; Mok, K.R.C.; Benistant, F.; Liu, C.J. ; Wee, A.T.S. ; Dong, G.; Chan, L.; Srinivasan, M.P. |
| 2008 | Understanding of boron junction stability in preamorphized silicon after optimized flash annealing | Yeong, S.H.; Colombeau, B.; Poon, C.H.; Mok, K.R.C.; See, A.; Benistant, F.; Tan, D.X.M.; Pey, K.L.; Ng, C.M.; Chan, L.; Srinivasan, M.P. |
| 2008 | Understanding of boron junction stability in preamorphized silicon after optimized flash annealing | Yeong, S.H.; Colombeau, B.; Poon, C.H.; Mok, K.R.C.; See, A.; Benistant, F.; Tan, D.X.M.; Pey, K.L.; Ng, C.M.; Chan, L.; Srinivasan, M.P. |
| 2008 | Understanding of carbon/fluorine Co-implant effect on boron-doped junction formed during soak annealing | Yeong, S.H.; Colombeau, B.; Mok, K.R.C.; Benistant, F.; Liu, C.J. ; Wee, A.T.S. ; Chan, L.; Ramam, A.; Srinivasan, M.P. |
